• 제목/요약/키워드: layer-by-layer method

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ALD-Al2O3 보호층이 적용된 CrAlSiN 코팅막의 내부식성 특성에 관한 연구 (Effect of ALD-Al2O3 Passivation Layer on the Corrosion Properties of CrAlSiN Coatings)

  • 만지흠;이우재;장경수;최현진;권세훈
    • 한국표면공학회지
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    • 제50권5호
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    • pp.339-344
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    • 2017
  • Highly corrosion resistance performance of CrAlSiN coatings were obtained by applying ultrathin $Al_2O_3$ thin films using atomic layer deposition (ALD) method. CrAlSiN coatings were prepared on Cr adhesion layer/SUS304 substrates by a hybrid coating system of arc ion plating and high power impulse magnetron sputtering (HiPIMS) method. And, ultrathin $Al_2O_3$ passivation layer was deposited on the CrAlSiN/Cr adhesion layer/SUS304 sample to protect CrAlSiN coatings by encapsulating the whole surface defects of coating using ALD. Here, the high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and energy dispersive X-ray spectrometry (EDX) analysis revealed that the ALD $Al_2O_3$ thin films uniformly covered the inner and outer surface of CrAlSiN coatings. Also, the potentiodynamic and potentiostatic polarization test revealed that the corrosion protection properties of CrAlSiN coatings/Cr/SUS304 sample was greatly improved by ALD encapsulation with 50 nm-thick $Al_2O_3$ thin films, which implies that ALD-$Al_2O_3$ passivation layer can be used as an effect barrier layer of corrosion.

2층 질하막 MNOS구조의 비휘발성 기억특성에 관한 연구 (A study on the nonvolatile memory characteristics of MNOS structures with double nitride layer)

  • 이형욱
    • E2M - 전기 전자와 첨단 소재
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    • 제9권8호
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    • pp.789-798
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    • 1996
  • The double nitride layer Metal Nitride Oxide Semiconductor(MNOS) structures were fabricated by variating both gas ratio and nitride thickness, and by duplicating nitride deposited and one nitride layer MNOS structure to improve nonvolatile memory characteristics of MNOS structures by Low Pressure Chemical Vapor Deposition(LPCVD) method. The nonvolatile memory characteristics of write-in, erase, memory retention and degradation of Bias Temperature Stress(BTS) were investigated by the homemade automatic .DELTA. $V_{FB}$ measuring system. In the trap density double nitride layer structures were higher by 0.85*10$^{16}$ $m^{-2}$ than one nitride layer structure, and the AVFB with oxide field was linearly increased. However, one nitride layer structure was linearly increased and saturated above 9.07*10$^{8}$ V/m in oxide field. In the erase behavior, the hole injection from silicon instead of the trapped electron emission was observed, and also it was highly dependent upon the pulse amplitude and the pulse width. In the memory retentivity, double nitrite layer structures were superior to one nitride layer structure, and the decay rate of the trapped electron with increasing temperature was low. At increasing the number on BTS, the variance of AVFB of the double nitride layer structures was smaller than that of one nitride layer structure, and the trapped electron retention rate was high. In this paper, the double nitride layer structures were turned out to be useful in improving the nonvolatile memory characteristics.

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Self assembled-monolayer(SAM)법을 이용한 TaN 확산방지막의 무전해 Cu 도금용 Pd seed layer 제조 및 특성 (Pd Seed Layer for Electroless Cu Deposition on TaN Diffusion Barrier by Self-Assembled-Monolayer Method(SAM))

  • 한원규;조진기;최재웅;김정태;염승진;곽노정;김진웅;강성군
    • 한국재료학회지
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    • 제17권9호
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    • pp.469-474
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    • 2007
  • Electroless deposition(ELD) was applied to fabricate Cu interconnections on a TaN diffusion barrier with Pd seed layer. The Pd seed layer was obtained by self-assembled monolayer method(SAM) with PDDA and PSS as surfactants. We were able to obtain about 10nm Pd nano particles as seeds for electroless Cu deposition and the density of Pd seeds was much higher than that of Pd seeds fabricated by conventional Pd sensitization-activation method. Also we were able to obtain finer Cu interconnections by ELD. Therefore we concluded that the Pd seed layer by SAM was able to be applied to form Cu interconnection by ELD for under 30nm feature.

스펙트럼 요소법을 이용한 판 구조물의 램파 전달 해석 (Analysis of Lamb wave propagation on a plate using the spectral element method)

  • 임기룡;김은진;최광규;박현우
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2008년도 추계학술대회논문집
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    • pp.71-81
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    • 2008
  • This paper proposes a spectral element which can represent dynamic responses in high frequency domain such as Lamb waves on a thin plate. A two layer beam model under 2-D plane strain condition is introduced to simulate high-frequency dynamic responses induced by piezoelectric layer (PZT layer) bonded on a base plate. In the two layer beam model, a PZT layer is assumed to be rigidly bonded on a base beam. Mindlin-Herrmann and Timoshenko beam theories are employed to represent the first symmetric and anti-symmetric Lamb wave modes on a base plate, respectively. The Bernoulli beam theory and 1-D linear piezoelectricity are used to model the electro-mechanical behavior of a PZT layer. The equations of motions of a two layer beam model are derived through Hamilton's principle. The necessary boundary conditions associated with electro mechanical properties of a PZT layer are formulated in the context of dual functions of a PZT layer as an actuator and a sensor. General spectral shape functions of response field and the associated boundary conditions are formulated through equations of motions converted into frequency domain. A detailed spectrum element formulation for composing the dynamic stiffness matrix of a two layer beam model is presented as well. The validity of the proposed spectral element is demonstrated through comparison results with the conventional 2-D FEM and the previously developed spectral elements.

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Investigation of continuous and discontinuous contact cases in the contact mechanics of graded materials using analytical method and FEM

  • Yaylaci, Murat;Adiyaman, Gokhan;Oner, Erdal;Birinci, Ahmet
    • Computers and Concrete
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    • 제27권3호
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    • pp.199-210
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    • 2021
  • The aim of this paper was to examine the continuous and discontinuous contact problems between the functionally graded (FG) layer pressed with a uniformly distributed load and homogeneous half plane using an analytical method and FEM. The FG layer is made of non-homogeneous material with an isotropic stress-strain law with exponentially varying properties. It is assumed that the contact at the FG layer-half plane interface is frictionless, and only the normal tractions can be transmitted along the contacted regions. The body force of the FG layer is considered in the study. The FG layer was positioned on the homogeneous half plane without any bonds. Thus, if the external load was smaller than a certain critical value, the contact between the FG layer and half plane would be continuous. However, when the external load exceeded the critical value, there was a separation between the FG layer and half plane on the finite region, as discontinuous contact. Therefore, there have been some steps taken in this study. Firstly, an analytical solution for continuous and discontinuous contact cases of the problem has been realized using the theory of elasticity and Fourier integral transform techniques. Then, the problem modeled and two-dimensional analysis was carried out by using ANSYS package program based on FEM. Numerical results for initial separation distance and contact stress distributions between the FG layer and homogeneous half plane for continuous contact case; the start and end points of separation and contact stress distributions between the FG layer and homogeneous half plane for discontinuous contact case were provided for various dimensionless quantities including material inhomogeneity, distributed load width, the shear module ratio and load factor for both methods. The results obtained using FEM were compared with the results found using analytical formulation. It was found that the results obtained from analytical formulation were in perfect agreement with the FEM study.

스트레인 에너지를 이용한 제진재 위치 결정 (Application of Strain Energy for Determining the Location of Damping Material)

  • 김중배;유국현;박상규;이상조
    • 한국소음진동공학회논문집
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    • 제18권11호
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    • pp.1199-1205
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    • 2008
  • The vehicle design engineers have studied the method of applying damping materials to the vehicle bodies by computer simulations and experimental methods in order to improve the vibration and noise characteristics of the vehicles. The unconstrained layer damping, being concerned with this study, has two layers(base layer and damping layer) and proyides vibration control of the base layer through extensional damping. Generally this kind of surface damping method is effectively used in reducing structural vibration at frequencies beyond 150Hz. The most important thing is how to apply damping treatment with respect to location and size of the damping material. To solve these problems, the current experimental methods have technical limits which are cumbersome, time consuming, and expensive. This Paper proposes a method based on finite element method and it employes averaged ESE(element strain energy) percent of total of dash panel assembly for 1/1 octave band frequency range by MSC/NASTRAN. The regions of high ESE percent of total are selected as proposed location of damping treatment. The effect of damping treatment is analyzed by comparing the frequency response function of the SPCC bare Panel and the damping treated panels.

IBC형 태양전지를 위한 균일하게 증착된 비정질 실리콘 층의 광섬유 레이저를 이용한 붕소 도핑 방법 (Boron Doping Method Using Fiber Laser Annealing of Uniformly Deposited Amorphous Silicon Layer for IBC Solar Cells)

  • 김성철;윤기찬;경도현;이영석;권태영;정우원;이준신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.456-456
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    • 2009
  • Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.

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접합요소를 이용한 복합기초지반의 변형해석

  • 박병기;정진섭;이문수
    • 한국지반공학회:학술대회논문집
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    • 한국지반공학회 1987년도 학술발표회 발표강연집
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    • pp.51-80
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    • 1987
  • In this studys a numerical analysis on the defomation of foundation layer was carried out by indroducing joint element. The method using the joust element between adj assent different materials has been originally developed for rock behavior(Goodman, et al. 1968) . The application of this method to the interface between the footing and soil layer proved satisfactory(Ghaboussi p et at. 1973). Authors tried to obtain the deformation of rrcompound foundation layerg", which vertically or horizontally or both consists of the natural(or intact) soft clay layer and the layer improved artificially in order to get high stiff-fness with replacement or chemical treatment to reduce the excessively detrimental settlemellt or lateral displacement in case of banking or building the civil structure on the soft layer. The joint conditions were classified into three categories : contacts sliding and separation. By coupling "JOINT" as a subroutine into multi-purpose code for the finite element method of the foundatlion daveloped by authors on the assumption that shearing and normal displacement can not be coupledl which terms pinon-dilatant" and by selecting modified Cam-clay modeIP the deformation analysis was performmed. The results using joint element were compared with those secured without introduction of joint element Nain results analized are as follows : 1. For the prediction of settlement and lateral desplacement, the result due to joint element was evaluated larger, which was regarded safe. 2. For the determination of ultimate bearing capacetyi the value using joint element appeared smaller by 20%, which was also safe.

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확장된 새로운 층 방법을 이용한 사다리꼴 회절격자의 TM 모드의 결합계수 계산 (Extended Additional Layer Method for the Calculation of TM mode coupling coefficient for Trapezoidal Gratings)

  • 조성찬;이동찬;김부균
    • 전자공학회논문지D
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    • 제35D권9호
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    • pp.87-92
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    • 1998
  • 확장된 새로운 층 방법을 이용하여 사다리꼴과 삼각형 형태의 회절격자 구조를 가지는 5층의 DFB 구조 소자의 TM 모드의 결합계수를 계산하였다. TM 모드의 unperturbed 필드 분포를 쉽게 계산하기 위하여 회절격자 영역의 비유전상수의 역수를 종축과 횡축 양 방향으로 평균값을 취하여 새로이 설정하는 층의 비유전상수의 역수가 되도록 설정하였다. 확장된 새로운 층 방법이 TM 모드의 결합계수 계산에도 유용하게 사용될 수 있음을 회절격자 영역의 등분할 층수를 6층까지 늘려가며 self-consistent하게 검증하였다.

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Chemical and Microstructural Changes at Interfaces between $ZrO_2.SiO_2$ Glass Fibers Prepared by Sol-Gel Method and Cement Matrices

  • Shin, Dae-Yong;Han, Sang-Mok
    • The Korean Journal of Ceramics
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    • 제1권3호
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    • pp.160-164
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    • 1995
  • Mechanical and chemical tests were performed on $Zro_2 \cdot SiO_2$ glass fibers manufactured by the sol-gel method and E-glass fibers-reinforced cement composites in order to investigate the interactions between glass fibers and cement matrices. Chemical attack leads to corrosion of the glass fiber surfaces. In the corrosion reactions, the surface of $30ZrO_2 \cdot 70 SiO_2$ glass fibers developed a densified concentric layer, which consists of glass corrosion products with much higher Zr and lower Si than the fresh glass fiber. The layer of reaction product is regarded to stiffen the cement matrices and provide a useful improvement to the mechanical properties. The addition of $ZrO_2$ content increases the corrosion resistance of glass fibers in cement by forming a passivating layer on the surface of glass fibers.

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