Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.06a
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- Pages.456-456
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- 2009
Boron Doping Method Using Fiber Laser Annealing of Uniformly Deposited Amorphous Silicon Layer for IBC Solar Cells
IBC형 태양전지를 위한 균일하게 증착된 비정질 실리콘 층의 광섬유 레이저를 이용한 붕소 도핑 방법
- Kim, Sung-Chul (Sungkyunkwan Univ.) ;
- Yoon, Ki-Chan (Sungkyunkwan Univ.) ;
- Kyung, Do-Hyun (Sungkyunkwan Univ.) ;
- Lee, Young-Seok (Sungkyunkwan Univ.) ;
- Kwon, Tae-Young (Sungkyunkwan Univ.) ;
- Jung, Woo-Won (Sungkyunkwan Univ.) ;
- Yi, Jun-Sin (Sungkyunkwan Univ.)
- 김성철 (성균관대학교) ;
- 윤기찬 (성균관대학교) ;
- 경도현 (성균관대학교) ;
- 이영석 (성균관대학교) ;
- 권태영 (성균관대학교) ;
- 정우원 (성균관대학교) ;
- 이준신 (성균관대학교)
- Published : 2009.06.18
Abstract
Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a