• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2001년도 봄 학술발표회 논문집
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• pp.563-570
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• 2001

In this study, the charactersistics of horizontal drains used to stabilize the dredged fill are investigated experimentally by doing tensile strength test, discharge capacity test, and filter clogging test. The types of the drains selected for the study are filament type (Tyre-E), embossed type(Type-P) and heat bonded cubic type with the thickness 10mm(Type-010) and 5mm(Type-05). The results of tensile strength and discharge capacity test show that the performance of drain Type-O10 was better than the other drains. This is caused by the fact that the lattice shape core of drain Type-O10 has strong rigidity and minimizes the loss of the sectional area of discharge with increased confining pressure. Analyzing the compatibility of filters by the results of the strength characteristics test and clogging test, the filter of filament type drain produced with polyester clothed polyamide performed well.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.208-211
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• 2002

$Bi_2Sr_2CuO_x$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.281-283
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• 2001

$Bi_{2}Sr_{2}CuO_{x}$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bearn sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition. two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit. then three dimensional growth takes place. Since Cu element is the most difficult to oxidize. only Sr and Bi react with each other predominantly. and forms a buffer layer on the substrate in an amorphous-like structure. which is changed to $SrBi_{2}O_{4}$ by in-situ anneal.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.497-501
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• 2004

The crystal structure of the GaN film on the AIN buffer layer grown by R. F sputtering with different thickness has been studied using X-ray scattering and transmission electron microscopy(TEM). The interface roughness between the AIN buffer layer and the epitaxial GaN film, due to crossover from planar to island grains, produced edge dislocations. The strain, coming from lattice mismatch between the AIN buffer layer and the epitaxial GaN film, produced screw dislocations. The density of the edge and screw dislocation propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.

• 한국CDE학회논문집
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• 제2권2호
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• pp.71-76
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• 1997

The deformations of polycrystalline materials are modelled by linking a constitutive equation for the crystallographic slip of a single crystal to the macroscopic behavior of the aggregate. In this study, anisotropic elasticity (lattice stretching) of a cubic crystal is incoporated into the anisotropic plasticity from crystallographic slip. The constitutive description for the aggregate, derived from a crystal plasticity theory, is used to formulate a Consistent Penalty Finite Element Method for the anisotropic elasto-viscoplastic deformation of polycrystalline materials. As an application, a plane-strain forging process is simulated and the effects of the initial textures on the deformation behavior of the workpiece are examined.

• ETRI Journal
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• 제13권4호
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• pp.42-51
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• 1991

MBE 성장시 기판 표면에서의 성장과정을 운동론적 지배과정과 열역학적 지배과정으로 나누어 성장모델을 제시하였으며, 화학적 평형상태에서의 열역학이 III-V compound의 성장속도와 composition 에 미치는 영향을 기존의 보고된 결과 데이터와 비교 분석하였다. 특히 miscibility gap 내에 존재하는 III-V ternary compound의 경우 박막의 성질 및 소자의 특성에 영향을 미치는 alloy clustering은 저온 성장시 surface kinetics에 의해, 고온성장시에는 열역학적 spinodal decomposition에 의해 결정됨을 알수 있었다. 열역학적 모델에서는 기판과 layer사이의 lattice mismatch와 재료의 elastic coefficient의 함수인 additive strain Gibbs free energy, 그리고 ternary solid solution의 regular behavior를 가정하여 ternary alloy의 mixing에 기인한 excess Gibbs free energy를 고려하였다.

• The Korean Journal of Ceramics
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• 제6권4호
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• pp.385-389
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• 2000

Residual stresses in epitaxial films were measured by X-ray diffraction method. Lattice strains of the (hkl) planes measured along particular Ψ-angles were converted to the in-plane stress according to the equation of stress-strain tensor conversion. Residual tensile stresses were observed in epitaxial PbTiO$_3$ films deposited on (100) SrTiO$_3$ substrate. Tensile stresses approximately 0.9 GPa were measured in Pb-rich films, while it increased to approximately 2.0 GPa with the decreasing of Pb content in the case of Pb-poor films, which ascribed to the formation of lead and oxygen vacancies (expressed as x in Pb$_1-x$TiO$_3-x$).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.281-283
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• 2001

Bi$_2$Sr$_2$CuO$\_$x/(Bi-2201) thin films were fabricated layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to SrBi$_2$O$_4$ by in-situ anneal.

• Applied Microscopy
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• 제36권spc1호
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• pp.47-56
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• 2006

Improvements are made to existing primitive cell volume measurement method to provide a real-time analysis capability for the phase analysis of nanocrystalline materials. Simplification is introduced in the primitive cell volume calculation leading to fast and reliable method for nano-phase identification and is applied to the phase analysis of Mo-Si-N nanocoating layer. In addition, comparison is made between real-time and film measurements for their accuracy of calculated primitive cell volume values and factors governing the accuracy of the method are determined. About 5% accuracy in primitive cell determination is obtained from camera length calibration and this technique is used to investigate the cell volume variation in WC-TiC core-shell microstructure. In addition to chemical compositional variation in core-shell type structure, primitive cell volume variation reveals additional information on lattice coherency strain across the interface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.119-121
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• 2002

$Bi_2Sr_2CuO_x$ thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method, 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.