Stress Determination in Epitaxial Lead Titanate Films by Asymmetric X-ray Diffraction Method

  • Uchida, Hiroshi (Department of Inorganic materials, Faculty of Engineering, Tokyo Institute of Technology) ;
  • Kiguchi, Takanori (Department of Inorganic materials, Faculty of Engineering, Tokyo Institute of Technology) ;
  • Wakiya, Naoki (Department of Inorganic materials, Faculty of Engineering, Tokyo Institute of Technology) ;
  • Shinozaki, Kazuo (Department of Inorganic materials, Faculty of Engineering, Tokyo Institute of Technology) ;
  • Mizutani, Nobuyasu (Department of Inorganic materials, Faculty of Engineering, Tokyo Institute of Technology)
  • Published : 2000.12.01

Abstract

Residual stresses in epitaxial films were measured by X-ray diffraction method. Lattice strains of the (hkl) planes measured along particular Ψ-angles were converted to the in-plane stress according to the equation of stress-strain tensor conversion. Residual tensile stresses were observed in epitaxial PbTiO$_3$ films deposited on (100) SrTiO$_3$ substrate. Tensile stresses approximately 0.9 GPa were measured in Pb-rich films, while it increased to approximately 2.0 GPa with the decreasing of Pb content in the case of Pb-poor films, which ascribed to the formation of lead and oxygen vacancies (expressed as x in Pb$_1-x$TiO$_3-x$).

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References

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