• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.642-647
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• 2015

The perovskite solid solutions of the $Sr_{1-x}Mg_xFe{^{3+}}_{1-{\tau}}Fe{^{4+}}_{\tau}O_{3-y}$ system (x=0.0, 0.1, 0.2, and 0.3) were synthesized in $N_2$ at $1,150^{\circ}C$. X-ray powder diffraction study assured that all the four samples had cubic symmetries(SM-0: $3.865{\AA}$, SM-1: $3.849{\AA}$, SM-2: $3.833{\AA}$, and SM-3: $3.820{\AA}$) and that the lattice volumes decreased steadily from $57.7{\AA}^3$ to $55.7{\AA}^3$ with x values. The nonstoichiometric chemical formulas were determined by Mohr salt analysis and with the increase of x values the amounts of $Fe^{4+}$ ion and oxygen were decreased simultaneously. Thermal analysis showed that SM-0 started to lose its oxygen at $450^{\circ}C$ and SM-1, Sm-2, and SM-3 began to lose their oxygen at around $350{\sim}400^{\circ}C$. SM-0 showed almost reversible weight change in the cooling process. All the samples exhibited semiconducting behaviors in the temperature range of $10{\sim}400^{\circ}C$. Conductivities of the 4 samples were decreased in the order of SM-0, SM-1, SM-2, and SM-3 at constant temperature. The activation energies of the conductions were in the range of 0.176 eV~0.244 eV.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.158-160
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• 2001

${\beta}-Ga_2O_3$ nanobelts and nanoparticles were synthesized by a thermal annealing of as-milled GaN powders at $930^{\circ}C$ in nitrogen and oxygen atmosphere. respectively. The width of the nanobelts are $20\;nm{\sim}1000\;nm$. the thickness of the nanobelts are 100 nm. A bundle of the nanobelts is several centimeters in length. The lattice structure of these nanobelts and nanoparticles was identified to be a monoclinic ${\beta}-Ga_2O_3$ by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected area electron diffraction (SAED).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.45-48
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• 2003

BiSrCaCuO thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

• Journal of the Korean Magnetic Resonance Society
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• v.12 no.2
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• pp.111-118
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• 2008

The mechanism of charge flow has been probed by measuring the $^{1}H$ chemical shift on a proton-irradiated ${KH_2}{PO_4}$ (KDP) single crystal. The proton irradiation caused the increase in $^{1}H$ chemical shift. It can be interpreted as the electronic charge transfer from the proton to oxygen atom, accompanied with the proton displacement along the hydrogen bond. For the high resolution $^{1}H$ chemical shift measurement, CRAMPS (Combined Rotation And Multiple Pulses) technique is utilized.

• Journal of the Korean Ceramic Society
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• v.49 no.2
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• pp.142-145
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• 2012

In order to investigate the surface SHG, (110) pure STO single crystals were exposed to a reducing atmosphere to induce the reduction of the Ti ion and the release of oxygen from the lattice compensating the reduction of the Ti ions. The anisotropy and asymmetry of SHG intensity explains a slight shrinkage. The incoming fundamental wave was polarized either in the $p$-in or $s$-in to the plane of incidence for the reflection geometry. The SH polarization diagram could be described by the electric dipole and/or quadrupole contribution of reduced STO single crystal surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.208-211
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• 2002

$Bi_2Sr_2CuO_x$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.281-283
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• 2001

$Bi_{2}Sr_{2}CuO_{x}$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bearn sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition. two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit. then three dimensional growth takes place. Since Cu element is the most difficult to oxidize. only Sr and Bi react with each other predominantly. and forms a buffer layer on the substrate in an amorphous-like structure. which is changed to $SrBi_{2}O_{4}$ by in-situ anneal.

• Journal of the Korean Ceramic Society
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• v.25 no.1
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• pp.35-41
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• 1988

In the system of Li2O-MgO-Al2O3-Cr2O3, the crystalline solid solution of LiCrO2 along the pseudo-binary join between rocksalt structure(LiCrO2) and spinel structure(MgCr2O4 or MgAl2O4) have been investigated by x-ray diffraction techniques. In this study, order-disorder phase transition of LiCrO2 was observed and the unit cell of the disordered LiCrO2 structure has been established. It has been found that LiCrO2 makes a solid solution over a wide range with MgAl2O4, while not with MgCr2O4. This difference was explained as being due to the ability of oxygen lattice distortion which depended on the relative sizes and chemical bonding characteristics of the substituted ions.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.17-17
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• 2002

Time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS) was applied to study the geometrical structure of the epitaxially grown BaTiO₃ layers on the MgO(100) surface. Hetero-epitaxial BaTiO₃ layers can be deposited by the following steps: first thermal evaporation of titanium onto the MgO(100) surface in the atmosphere of oxygen at 400℃, secondly thermal evaporation of barium in the same manner, and finally annealing at 800℃. Well ordered perovskite BaTiO₃ was confirmed from the ICISS spectra and reflection high electron energy diffraction (RHEED) patterns. It was also revealed that BaTiO₃ had cubic structure with the same lattice parameter of bulk phase.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.981-982
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• 2006

In this study, the synthesis and semiconducting properties of cation and defect-doped KTaO3 film is reported. KTaO3is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the KTaO3 lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting KTaO3:Ca films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were 0.27 cm2/Vs and 3.21018cm-3.