Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2006.06a
- /
- Pages.981-982
- /
- 2006
Synthesis of Semiconducting $KTaO_3$ Thin films
KTaO3 Thin Film의 Semiconducting 합성
- Koo, Ja-Yl (Department of Digital Electronics Information, Inha technical College) ;
- Ohm, Woo-Yong (Department of Digital Electronics Information, Inha technical College) ;
- Ahn, Chang-Hwan (Department of Digital Electronics Information, Inha technical College) ;
- Bae, Hyung-Jin (Department of Materials Science and Engineering, University of Florida)
- 구자일 (Department of Digital Electronics Information, Inha technical College) ;
- 엄우용 (Department of Digital Electronics Information, Inha technical College) ;
- 안창환 (Department of Digital Electronics Information, Inha technical College) ;
- 배형진 (Department of Materials Science and Engineering, University of Florida)
- Published : 2006.06.21
Abstract
In this study, the synthesis and semiconducting properties of cation and defect-doped KTaO3 film is reported. KTaO3is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the KTaO3 lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting KTaO3:Ca films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were 0.27 cm2/Vs and 3.21018cm-3.
Keywords