• Structural Engineering and Mechanics
• /
• v.48 no.2
• /
• pp.275-289
• /
• 2013

The cross sections of multi-span beams are sometimes suddenly increased at the interior support of continuous beams to resist high negative moment. An earlier study on elastic lateral torsional buckling of stepped beams was conducted to propose new design equations. This research aims to continue the earlier study by considering the effect of inelastic buckling of stepped beams subjected to pure bending and general loading condition. A three-dimensional finite element-program ABAQUS and a statistical program MINITAB were used in the development of new design equations. The inelastic lateral torsional buckling strengths of 36 and 27 models for singly and doubly stepped beams, respectively, were investigated. The general loading condition consists of 15 loading cases based on the number of inflection point within the unbraced length of the stepped beams. The combined effects of residual stresses and geometrical imperfection were also considered to evaluate the inelastic buckling strengths. The proposed equations in this study will definitely improve current design methods for the inelastic lateral-torsional buckling of stepped beams and will increase efficiency in building and bridge design.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.9
• /
• pp.466-470
• /
• 2001

We have developed a sub-micron gap fabrication technology using chemical-mechanical polishing (CMP) without /the sub-micron lithography equipments (0.18∼0.25 7m). And it has been applied to a lateral field emission device (FED), in which narrow gap distance is very important for reducing turn-on voltage. As a result, the turn-on voltage (at which the current level is 1 nA) of the fabricated device with the gap distance of 256 nm is as low as 4.0 V, which is the lowest turn-on voltage among lateral FEDs ever reported.

• Computational Structural Engineering
• /
• v.3 no.4
• /
• pp.123-132
• /
• 1990

In current practice of earthquake resistant design the equivalent lateral force procedure is widely used because of its simplicity and convenience. But the equivalent lateral force procedure is derived based on the assumptions that the dynamic behavior of the structure is governed primarily by the fundamental vibration mode and the effect of higher modes is included in an approximate manner. Therefore the prediction of dynamic responses of structures using the equivalent lateral force procedure is not reliable when the effect of higher vibration modes on the dynamic behavior is significant. In this study, design seismic load which can reflect the effect of higher vibration modes is proposed from the point of view of proper assessment of story shears which have the major influence on the design moment of beams and columns. To evaluate the effect of higher modes, differences between the story force based on the equivalent lateral force procedure specified in current earthquake resistance building code and the one based on modal analysis using design spectrum analysis are examined. From these results an improved design seismic load for the equivalent lateral force procedure which can reflect the effect of higher vibration modes are proposed.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.2 no.2
• /
• pp.93-101
• /
• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.6
• /
• pp.235-240
• /
• 2003

In this paper, we present the fabrication and the characteristic analysis of sequential lateral solidification(SLS) poly-Si thin film transistors(TFT's) with molybdenum gate for active matrix liquid displays (AMLCD's) pixel controlling devices. The molybdenum gate is applied for the purpose of low temperature processing. The maximum processing temperature is 55$0^{\circ}C$ at the dopant thermal annealing step. The SLS processed poly-Si film which is reduced grain and grain boundary effect, is applied for the purpose of electrical characteristics improvements of poly-Si TFT's. The fabricated low temperature SLS poly-Si TFT's had a varying the channel length and width from 10${\mu}{\textrm}{m}$ to 2${\mu}{\textrm}{m}$. And to analyze these devices, extract electrical characteristic parameters (field effect mobility, threshold voltage, subthreshold slope, on off current etc) from current-voltage transfer characteristics curve. The extract electrical characteristic of fabricated low temperature SLS poly-Si TFT's showed the mobility of 100~400cm$^2$/Vs, the off current of about 100pA, and the on/off current ratio of about $10^7$. Also, we observed that the change of grain boundary according to varying channel length is dominant for the change of electrical characteristics more than the change of grain boundary according to varying channel width. Hereby, we comprehend well the characteristics of SLS processed poly-Si TFT's witch is recrystallized to channel length direction.

• Clinical Pain
• /
• v.19 no.2
• /
• pp.80-89
• /
• 2020

Objective: We compared the regenerative effects of microcurrent therapy (MT) according to the type of electric current, which were direct current microcurrent therapy (DCMT) and alternating current microcurrent therapy (ACMT) on atrophied calf muscle in cast-immobilized rabbit. Method: Rabbits were allocated into control group (sham MT), ACMT group, and DCMT group. Before starting treatment, right gastrocnemius (GCM) muscle was immobilized by cast for 2 weeks. Compound muscle action potential of tibial nerve in nerve conduction study, circumference of calf muscle using a ruler, and thickness of medial and lateral GCM muscle measured by ultrasound, cross sectional area (CSA), and proliferating cell nuclear antigen (PCNA) ratios (%) of muscle fibers were measured on the immunohistochemical analysis. Results: The mean atrophic changes (%) in right medial and lateral GCM muscle thickness, right calf circumference, and amplitude of CMAP of the right tibial nerve in ACMT group and DCMT group were significantly lower than those in control group, respectively (p<0.05). The mean CSA (μm²) of type I and type II and PCNA ratios (%) of medial and lateral GCM muscle fibers in ACMT group and DCMT group were significantly greater than those in control group, respectively (p<0.05). There were no significant differences between the ACMT group and DCMT group at all parameters. Conclusion: This study demonstrated that ACMT and DCMT showed better regeneration effect than sham MT. Microcurrent may be effective in regeneration of atrophied muscle regardless of the type of current.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.3
• /
• pp.93-97
• /
• 2011

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a 0.35 ${\mu}M$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and 1.5 ${\mu}M$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($I_{SUB}$), drain to source leakage current ($I_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.

• Journal of Advanced Marine Engineering and Technology
• /
• v.30 no.8
• /
• pp.901-906
• /
• 2006

In this paper, the power amplifier using active bias circuits for LDMOS(Lateral Diffused Metal Oxide Semiconductor) MRF-21180 is designed and fabricated. According to change the temperature, the gate voltage of LDMOS is controlled by the fabricated active bias circuits which is made of PNP transistor to suppress drain current. The driving amplifier using MRF-21125 and MRF-21060 is made to drive the LDMOS MRF-21180 power amplifier. The variation of current consumption in the fabricated 60 watt power amplifier has an excellent characteristics of less than 0.1 A, whereas a passive biasing circuit dissipates more than 0.5 A. The implemented power amplifier has the gain over 9 dB, the gain flatness of less than $\pm$0.1 dB and input and output return loss of less than -6 dB over the frequency range 2.11 $\sim$ 2.17 GHz. The DC operation point of this power amplifier at temperature variation 0 $^{\circ}C$ to 60 $^{\circ}C$ is fixed by active bias circuit.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.1
• /
• pp.17-23
• /
• 2005

The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05b
• /
• pp.82-85
• /
• 2003

This dissertation describes an optimization method for fabricating thick films with superconducting YBCO powders by electrophoresis technique. The lateral alternating applied voltage caused to shake the superconducting powder vertically to the deposition field during the process of the oriented deposition so that it was deposited along the c-axis on the silver tape with shaky-aligned EPD. As the result, the optimized thin film fabrication method was obtained to get more dense and uniform surface morphology as well as the improved critical current density. For commercial utilization and efficiency, in this dissertation, alternating voltage of 25-120 V/cm in frequency of 60Hz was proposed to apply it as a subsidiary source for shaky-flow deposition so that the fabricated thin film showed uniform surface morphology with less voids and cracks and $T_{c.zero}$ of 90 K and the critical current density of $3419A/cm^2$.