• 제목/요약/키워드: lateral current

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Prediction of Wave-Induced Current Using Time-Dependent Wave Model (쌍곡선형 파랑모형을 이용한 해빈류 예측)

  • 이정만;김재중
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 1998.10a
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    • pp.189-199
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    • 1998
  • Wave-induced current model is developed in our study and this model is composed with wave transform model and current model. Two types of wave model are used in our study, one is Copeland(1985) type which is applied in the offshore region and the other is Watanabe and Maruyama(1984) type which is applied in the surf zone. The depth-integrated and time-averaged governing equation of an unsteady nonlinear form is used in the wave induced current model. Lateral mising, radiation stresses, surface and bottom stresses are considered in our current model. Copeland's(1985) relult is used to calculate radiation stress and Berkmeir & Darlymple's(1976) is used as a surface friction formula. Numerical solutions are obtained by Leendertse scheme and compared with Noda's(1974) experimental results for the uniform slope coastal region test and Nishimura & Maruyama's(1985) experimental relults and numerical simulation results for the detached breakwater test. The results from our wave model show good agreement with the others and also show nonlinear effects around the detached breakwater. Wave induced current model is developed in this study and this model shows nonlinear effects around the detached breakwater and can be applied in the surf zone and also consider the friction stresses.

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Improved Distribution of Lateral Seismic Forces for Evaluation of Inelastic Seismic Response of RC Irregular Building Structures (비정형 RC 건축구조물의 비선형 지진응답 평가를 위한 개선된 횡하중 분배 방법)

  • 최원호
    • Proceedings of the Earthquake Engineering Society of Korea Conference
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    • 2000.10a
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    • pp.322-329
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    • 2000
  • Current seismic design codes for building structures are based on the methods which can provide enough capacity to satisfy objected performance level and exactly evaluate the seismic performance of buildings. Pushover analysis of fast becoming an accepted method for the seismic evaluation of building structures. The popularity of this approximate, nonlinear static analysis method is due to its conceptual simplicity and ability to graphically describe a capacity and demand of structure. However, some of the shortcomings of the pushover analysis, especially for longer period and irregular buildings, is the inability of method to identify failure mechanisms due to effects of higher modes. In this paper proposed lateral load pattern which includes the contribution of higher modes of vibration for irregular building structure and compared to seismic response obtained by time history.

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A Lateral Dual-Channel Emitter Switched Thyristor with the Segmented p-Base (세그먼트 p-베이스를 이용한 수평형 이중 채널 EST)

  • O, Jae-Geun;Byeon, Dae-Seok;Han, Min-Gu;Choe, Yeon-Ik
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.7
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    • pp.530-532
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    • 1999
  • A new lateral device entitled SB-DCEST(segmented p-base dual-channel emitter switched thyristor), which suppresses the snapback is proposed and successfully fabricated. The proposed device effectively suppressed the snapback phenomenon by employing the gigh resistance in self-aligned segmented p-base when compared with the conventional DCEST. The experimental results show that the SB-DCEST has the low forward voltage drop of 4.3 V at anode current of $150 A/cm^2$ with the eliminated snap-back regime, while conventional DCEST exhibits higher forward voltage drop of 5.3 V.

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Deformation Capacity of Reinforced Concrete Columns Subjected to Axial Compression and Lateral Load Reversals (축력 및 반복 횡하중을 받는 철근 콘크리트 기둥의 변형능력에 관한 연구)

  • 박광욱;이용택;유영찬;이원호;김성수;이리형
    • Proceedings of the Korea Concrete Institute Conference
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    • 1993.04a
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    • pp.107-112
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    • 1993
  • The objective of this experimental investigation is to examine the feasibility and the usefulness of the complementary crosstie in the current ACI 318-89 code for rienforced concrete columns subjected to constant axial load and lateral load reversals. Tests were conducted on1/3 scaled four columns with the length of 1.9m and the cross section of 20$\times$20 cm. The main parameters of specimens were the magnitude of axial load applied and the configuration of transverse reinforcements . From the experimental results, it can be seen that while the column subjected to lower axial load represented considerable ductility behaviors, the column subjected to higher axial load showed the brittle failure

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Research of the Unmanned Vehicle Control and Modeling for Lane Tracking (차선인식을 위한 무인자동차의 차량제어 및 모델링에 관한 연구)

  • 김상겸;임하영;김정하
    • Transactions of the Korean Society of Automotive Engineers
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    • v.11 no.6
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    • pp.213-221
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    • 2003
  • This paper describes a method of lane tracking by means of a vision system which includes vehicle control and modeling. Lane tracking is considered one of the important technologies in an unmanned vehicle and mobile robot system. The current position and condition of the vehicle are calculated from an image processing method by a CCD camera. We deal with lane tracking as follows. First, vehicle control is included in the road model, and lateral and longitudinal controls. Second, the image processing method deals with the lane detection method, image processing algerian, and filtering method. Finally, this paper proposes a correct method for lane detection through a vehicle test by wireless data communication.

Transmission Line Analysis of Accumulation Layer in IEGT

  • Moon, Jin-Woo;Chung, Sang-Koo
    • Journal of Electrical Engineering and Technology
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    • v.6 no.6
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    • pp.824-828
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    • 2011
  • Transmission line analysis of the surface a cumulation layer in injection-enhanced gate transistor (IEGT) is presented for the first time, based on per-unit-length resistance and conductance of the surface layer beneath the gate of IEGT. Lateral electric field on the accumulation layer surface, as well as the electron current injected into the accumulation layer, is governed by the well-known wave equation, and decreases as an exponential function of the lateral distance from the cathode. Unit-length resistance and conductance of the layer are expressed in terms of the device parameters and the applied gate voltage. Results obtained from the experiments are consistent with the numerical simulations.

A Study on the Low Temperature(45$0^{\circ}C$) Poly-Si TFT Fabricated on the Glass Substrate by Metal-Induced Lateral Crystallization (MILC) (금속 유도 측면 결정화에 의해 유리기판 위에 제작된 저온(45$0^{\circ}C$) 다결정 박막 트랜지스터에 관한 연구)

  • 김태경;인태형;이병일;주승기
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.5
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    • pp.48-53
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    • 1998
  • Poly-Si TFT's could be fabricated on glass substrates by metal induced lateral crystallization (MILC) method at 450.deg. C. Channel area of the poly-Si TFT's was laterally crystallized from source and drain areas, where a thn nickel film was deposited. Dopants activation for the formation of source and drain region could be achieved by thermal annealing at 450.deg. C after the ion mass doping of phosphorus. The field effect mobility of thus formed N-channel poly-Si TFT's was 76cm$^{2}$/Vs, and the on/off current ratio was higher than 7E6.

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A Design Evaluation of Strained Si-SiGe on Insulator (SSOI) Based Sub-50 nm nMOSFETs

  • Nawaz, Muhammad;Ostling, Mikael
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.2
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    • pp.136-147
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    • 2005
  • A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

A Study on the Lateral Waveguiding & Beam Width Variation of DH Laser Diode (이중 헤테로 접합 레이저 다이오드의 횡방향 도파 및 빔폭 변화에 관한 연구)

  • 김은수;박한규
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.20 no.1
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    • pp.15-21
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    • 1983
  • In this paper, the theoretical analysis of lateral guiding mechanism in stripe geometry Double Heterojunction Laser Diode is performed. In the analysis, the spatial variations of gain form refractive index profile are modeled by the mathematical form of injected current density and the beam width variations dependence of active layer, stripe width & cavity length have been analyzed by perturbed mode equation.

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RNA-Binding Proteins in Amyotrophic Lateral Sclerosis

  • Zhao, Melody;Kim, Jihye Rachel;van Bruggen, Rebekah;Park, Jeehye
    • Molecules and Cells
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    • v.41 no.9
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    • pp.818-829
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    • 2018
  • Significant research efforts are ongoing to elucidate the complex molecular mechanisms underlying amyotrophic lateral sclerosis (ALS), which may in turn pinpoint potential therapeutic targets for treatment. The ALS research field has evolved with recent discoveries of numerous genetic mutations in ALS patients, many of which are in genes encoding RNA binding proteins (RBPs), including TDP-43, FUS, ATXN2, TAF15, EWSR1, hnRNPA1, hnRNPA2/B1, MATR3 and TIA1. Accumulating evidence from studies on these ALS-linked RBPs suggests that dysregulation of RNA metabolism, cytoplasmic mislocalization of RBPs, dysfunction in stress granule dynamics of RBPs and increased propensity of mutant RBPs to aggregate may lead to ALS pathogenesis. Here, we review current knowledge of the biological function of these RBPs and the contributions of ALS-linked mutations to disease pathogenesis.