• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.53-58
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• 1998

A buried channel poly-Si TFT (BCTFT) for application of high performance integrated circuits has been proposed and fabricated. BCTFT has unique features, such as the moderately-doped buried channel and counter-doped body region for conductivity modulation, and the fourth terminal entitled back bias for preventing kink effect. The n-type and p-type BCTFT exhibits superior performance to conventional poly-Si TFT in ON-current and field effect mobility due to moderate doping at the buried channel. The OFF-state leakage current is not increased because the carrier drift is suppressed by the p-n junction depletion between the moderately-doped buried channel and the counter-doped body region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.99-100
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• 2009

SGOI 1T-DRAM cells with various Ge mole fractions were fabricated and compared to the SOI 1T-DRAM cell. SGOI 1T-DRAM cells have a higher leakage current than SOI 1T-DRAM cell at subthreshold region. The leakage current due to crystalline defects and interface states at Si/SiGe increased with Ge mole. This phenomenon causes sensing margin and the retention time of SGOI 1T-DRAMs decreased with increase of Ge mole fraction.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1462-1464
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• 1998

Poly-Si TFT(Thin Film Transistor) is a electronic device that can be applied to the field of large area electronics such as AMLCD. We have fabricated the poly-Si TFT with lateral body terminal that is counter-doped body electrode and investigated the electrical characteristics of it. The lateral body terminal being short with s terminal, we have measured the transfer charac (Vg-ld) and the output characteristic (Vd-ld) fabricated devices. The measured result showe only that leakage current in OFF-state was re and Kink effect in ON-state was suppressed bu that in output characteristic curve the output Id was sustained constantly with the output v Vd in the saturation region.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.711-714
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• 2003

In this presentation, we investigated the abnormal subthreshold slope of the FD SOI MOSFETs upon the rapid thermal annealing. Based on subthreshold technique and C-V measurement, we deduced that the hump of the subthreshold slope comes from the abnormal D$_{it}$ distribution after RTA. The local kink in the interface trap density distribution by RTA drastically degrades the subthreshold characteristics and mini hump can be eliminated by S-PGA.A.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.126-132
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• 1995

The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.89-95
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• 1996

In this ppaer, temeprature dependent transport and heat transport models have been incorperated to the two dimensional device simulator SNU-2D provides a solid bse for nonisothermal device simulation. As an example to study the nonisothermal problem. we consider SOI MOSFET's I-V characteristics have been simulated and compared with the measurements. It is shown that negative slopes in the Ids-Vds characteristics are casused by the temperature dependence of the saturation velocity and the degradation of the temperature dependence mobility. Also it is shown that the kink effect occurs when impact ionization near the drain produces a buildup of holes in this isolated device island, and the hysteresis is caused by the creation of holes in the channel and their flow to the source.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.93-94
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• 2007

다양한 LDD(lightly doped drain)에 따른 n-channel poly-Si TFT (thin film transistor)에 대하여 보고한다. 유리 기판 위에 ELA를 이용하여 만들어진 Polycrystalline silicon (poly-Si)은 TFT-LCD의 응용을 위한 재료로써 우수한 특성을 갖는다. 제작된 n-channel TFT는 절연층으로 $SiN_x$, $SiO_2$의 이중 구조를 갖는다. 다양한 LDD에 따른 n-channel poly-Si TFT의 문턱전압($V_{TH}$), ON/OFF 전류비 ($I_{ON}/I_{OFF}$), 포화전류($I_{DSAT}$)는 TFT의 보다 좋은 성능을 위해 연구된다. 짧은 LLD 길이를 가진 n-channel poly-Si TFT의 문턱전압은 작고, 포화전류의 값은 크다. 또한 긴 LLD 길이를 가진 n-channel poly-Si TFT는 작은 kink effect를 가진다.

• Korean Journal of Materials Research
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• v.25 no.8
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• pp.398-402
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• 2015

Fundamental studies of microstructural changes and high temperature deformation of titanium aluminide (TiAl) were conducted from the view point of the effect of Al content in order to develop the manufacturing process of TiAl. Microstructures in an as cast state consisted mainly of lamellar structure irrespective of Al content. By homogenization at 1473 K, the microstructures of Ti-49Al and Ti-51Al were transformed into an equiaxial structure which was composed of ${\gamma}$-TiAl, while the lamellar structure that was observed in Ti-46Al and Ti-47Al was much more stable. We found that the reduction of Al content suppressed the formation of equiaxial grains and resulted in a microstructure of only a lamellar structure. On Ti-49Al and Ti-51Al, dynamic recrystallization occurred during high temperature deformation, and the microstructure was transformed into a fine equiaxial one, while the microstructures of Ti-46Al and Ti-47Al contained few recrystallized grains and consisted mainly of a deformed lamellar structure. We observed that on the low-Al alloys the lamellar structure under hard mode deformation conditions deformed as kink observed B2-NiAl. High temperature deformation characteristics of TiAl were strongly affected by Al content. An increase of Al content resulted in a decrease of peak stress and activation energy for plastic deformation and an increase of the recrystallization ratio in TiAl.

• Journal of the Korean Society for Precision Engineering
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• v.14 no.6
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• pp.83-89
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• 1997

In order to study on fatigue crack retardation and retardation mechanism in variable loading, the effects of crack tip branching in fatigue crack growth retardation were examined. The characteristics of crack tip banching behavior was considered to micro structure. It was examined that the variation of crack tip branching angle. Crack tip branching was observed along the grain boundary of ferrite and pearlite structure. It was found that the abanching angle ranges from 25 to 53 degrees. Using the finite element method, the variable of crack driving force to branching angle was examined. The effective crack driving force ( $K_{\eff}$ ) decreased as the braching angle increases. The rate of decrease was 33% for the kinked type and 29% for the forked one. It was confirmed that the effect of crack tip branching is a very important factor in fatigue crack growth retardation. Therefore, crack branching effect should be considered building the hypoth- etical model to predict crack growth retardation.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1416-1417
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• 2011

킹크효과를 억제할 수 있는 새로운 f-모양 트리플게이트 구조를 가지는 다결정실리콘 박막트랜지스터는 추가적인 공정과정 없이 제안 및 제작되었다. 이러한 다결정실리콘 박막트랜지스터의 채널에는 순차적인 횡방향 고체화(Sequential Lateral Solidification, SLS)나 CW 레이져 횡방향 결정화(CW laser Lateral Crystallization, CLC) 등과 같은 방법으로 제작된 횡방향으로 성장시킨 그레인이 있다. 이 소자의 전체적인 전류흐름은 횡방향으로 성장시킨 그레인 경계에 강력하게 영향을 받는다. f-모양 트리플게이트에는 횡방향으로 성장시킨 그레인과 평행한 방향으로 위치한 채널, 그리고 수직인 방향으로 위치한 채널이 있다. 이 소자는 f-모양 게이트 구조에서의 비대칭 이동도를 이용하여 다결정실리콘 박막트랜지스터의 킹크효과를 효과적으로 억제시킬 수 있다는 사실을 실험과 시뮬레이션을 통해 검증되었다. 우리의 실험 결과는 이 논문에서 제안된 f-모양 트리플게이트 박막트랜지스터가 기존의 박막트랜지스터와 비교할 때 더 효과적으로 킹크 효과를 감소시킬 수 있다는 것을 보여주었다. 또한 고온 캐리어 스트레스 조건에서의 신뢰성도 개선할 수 있음이 확인되었다.