• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.239-246
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• 1999

A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.7
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• pp.769-776
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• 2003

This paper presents analysis and design of microstrip Rotman lens operating over wide band and wide steering angle by the contour integral method along with the segmentation method. All mutual coupling, internal reflections between ports and the discontinuity at every junction are taken into account. Equally spaced ports are designed and realized, which make suppress output ripple through the array ports. Impedance matching and mutual coupling between ports are analyzed and optimized using 12 input and 12 output exponential tapers. The measured results of fabricated lens show ${\pm}$ 1.8 dB insertion loss deviation over 6∼18 GHz wide frequency range and beam steering accuracy less than 1$^{\circ}$over ${\pm}$53$^{\circ}$angle and agrees well with the analysis results.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.42 no.9
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• pp.789-794
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• 2014

The FPGA is used to the high speed digital satellite communication on the Digital Signal Process Unit of the next generation GEO communication satellite. The high capacity FPGA has the high power dissipation and it is difficult to satisfy the derating requirement of temperature. This matter is the major factor to degrade the equipment life and reliability. The thermal control at the equipment level has been worked through thermal conduction in the space environment. The FPGA of CCGA or BGA package type was mounted on printed circuit board, but the PCB has low efficient to the thermal control. For the FPGA heat dissipation, the heat sink was applied between part lid and housing of equipment and the performance of heat sink was confirmed via thermal vacuum test under the condition of space qualification level. The FPGA of high power dissipation has been difficult to apply for space application, but FPGA with heat sink could be used to space application with the derating temperature margin.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.199-207
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• 2011

A Ku-band low noise amplifier has been designed and fabricated by using 0.25 um SiGe BiCMOS process. The developed Ku-band LNA RFIC which has been designed with hetero-junction bipolar transistor(HBT) in the BiCMOS process have noise figure about 2.0 dB and linear gain over 19 dB in the frequency range from 9 GHz to 14 GHz. Optimization technique for p-tap value and electro-magnetic(EM) simulation technique had been used to overcome the inaccuracy in the PDK provided from the foundry service company and to supply the insufficient inductor library. The finally fabricated low noise amplifier of two fabrication runs has been implemented with the size of $0.65\;mm{\times}0.55\;mm$. The pure amplifier circuit layout with the reduced size of $0.4\;mm{\times}0.4\;mm$ without the input and output RF pads and DC bais pads has been incorporated as low noise amplication stages in the multi-function RFIC for the active phased array antenna of Ku-band satellite VSAT.

• Korean Journal of Materials Research
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• v.24 no.1
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• pp.19-24
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• 2014

We report the nitrogen monoxide (NO) gas sensing properties of p-type CuO-nanorod-based gas sensors. We synthesized the p-type CuO nanorods with breadth of about 30 nm and length of about 330 nm by a hydrothermal method using an as-deposited CuO seed layer prepared on a $Si/SiO_2$ substrate by the sputtering method. We fabricated polycrystalline CuO nanorod arrays at $80^{\circ}C$ under the hydrothermal condition of 1:1 morality ratio between copper nitrate trihydrate [$Cu(NO_2)_2{\cdot}3H_2O$] and hexamethylenetetramine ($C_6H_{12}N_4$). Structural characterizations revealed that we prepared the pure CuO nanorod array of a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the gas sensing measurements that the p-type CuO nanorod gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $200^{\circ}C$. We also found that these CuO nanorod gas sensors showed reversible and reliable electrical response to NO gas at a range of operating temperatures. These results would indicate some potential applications of the p-type semiconductor CuO nanorods as promising sensing materials for gas sensors, including various types of p-n junction gas sensors.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.37 no.10
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• pp.1017-1026
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• 2009

The solar cell system operates by facing the sun-light. Minor cracks, static discharge, and thermal shock that can happen during production/testing phase can lead to degradation in performance during operation, since solar cells are exposed to extreme thermal/mechanical environment in space. In order to detect small cracks and internal damages in the solar cells due to thermal shocks, which are the core units of a solar cell system, expensive equipment, complicated test process, and much time are required. Therefore, a qualitative method for easily and quickly testing the 'health' of solar cell functionality is required. This dissertation describes a theoretical and technical grounds for quickly and easily evaluating the health of solar cells using electroluminescence effect of Gallium-Arsenide solar cells that are most widely used by spacecrafts in recent years. Also described in the dissertation is the technical issues and constraining factors for applying the proposed method to actual space-rated solar cell systems.

• Journal of Power Electronics
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• v.17 no.6
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• pp.1535-1544
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• 2017

Advances in FPGA technology have enabled fast real-time simulation of power converters, filters and loads. FPGA based HIL (Hardware-In-the-Loop) simulators have revolutionized control hardware and software development for power electronics. Common time step sizes in the order of 100ns are sufficient for simulating switching frequency current and voltage ripples. In order to keep the time step as small as possible, ideal switching function models are often used to simulate the phase legs. This often produces inferior results when simulating the discontinuous conduction mode (DCM) and disabled operational states. Therefore, the corresponding measurement and protection units cannot be tested properly. This paper describes a new solution for this problem utilizing a discrete-time PI controller. The PI controller simulates the proper DC and low frequency AC components of the phase leg voltage during disabled operation. It also retains the advantage of fast real-time execution of switch-based models when an accurate simulation of high frequency junction capacitor oscillations is not necessary.

• Journal of radiological science and technology
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• v.31 no.2
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• pp.183-188
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• 2008

Aim of this study is to investigate the feasibility of 2D ion chamber array as a substitute of the water phantom system in a periodic Linac QA. For the feasibility study, a commercial ion chamber matrix was used as a substitute of the water phantom in the measurement for a routine QA beam properties. The device used in this study was the I'm RT MatriXX (Wellhofer Dosimetrie, Germany). The MatriXX consists of a 1,020 vented ion chamber array, arranged in $24{\times}24\;cm^2$ matrix. Each ion chamber has a volume of $0.08\;cm^3$, spacing of 0.762 cm. We investigated dosimetric parameters such as dose symmetry, energy ($TPR_{20,10}$), and absolute dose for comparing with the water phantom data with a Farmer-type ionization chamber (FC65G, Wellhofer Dosimetrie, Germany). For the MatriXX measurements, we used the white polystyrene phantom (${\rho}:\;1.18\;g/cm^3$) and also considered the intrinsic layer (${\rho}:\;1.06\;g/cm^3$, t: 0.36 cm) of MatriXX to be equivalent to water depth. In the preliminary study of geometrical QA using MatriXX, the rotation axis of collimator and half beam junction test were included and compared with film measurements. Regarding the dosimetrical QA, the MatriXX has shown good agreements within ${\pm}1%$ compared to the water phantom measurements. In the geometrical test, the data from MatriXX were comparable with those from the films. In conclusion, the MatriXX is a good substitute for water phantom system and film measurements. In addition, the results indicate that the MatriXX as a cost-effective novel QA tool to reduce time and personnel power.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.606-610
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• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.111-114
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• 2011

As a growth-template of ZnO nanorods (NR), a hexagonal $\beta-Ni(OH)_2$ nanosheet (NS) was synthesized with the low temperature hydrothermal process and its microstructure was investigated using a high resolution scanning electron microscope and transmission electron microscope. Zinc nitrate hexahydrate was hydrolyzed by hexamethylenetetramine with the same mole ratio and various temperatures, growth times and total concentrations. The optimum hydrothermal processing condition for the best crystallinity of hexagonal $\beta-Ni(OH)_2$ NS was determined to be with 3.5 mM at $95^{\circ}C$ for 2 h. The prepared $Ni(OH)_2$ NSs were two dimensionally arrayed on a substrate using an air-water interface tapping method, and the quality of the array was evaluated using an X-ray diffractometer. Because of the similarity of the lattice parameter of the (0001) plane between ZnO (wurzite a = 0.325 nm, c = 0.521 nm) and hexagonal $\beta-Ni(OH)_2$ (brucite a = 0.313 nm, c = 0.461 nm) on the synthesized hexagonal $\beta-Ni(OH)_2$ NS, ZnO NRs were successfully grown without seeds. At 35 mM of divalent Zn ion, the entire hexagonal $\beta-Ni(OH)_2$ NSs were covered with ZnO NRs, and this result implies the possibility that ZnO NR can be grown epitaxially on hexagonal $\beta-Ni(OH)_2$ NS by a soluble process. After the thermal annealing process, $\beta-Ni(OH)_2$ changed into NiO, which has the property of a p-type semiconductor, and then ZnO and NiO formed a p-n junction for a large area light emitting diode.