• Title/Summary/Keyword: isotropic stable process

Search Result 8, Processing Time 0.026 seconds

Fabrication of Hollow-type Silicon Microneedle Array Using Microfabrication Technology (반도체 미세공정 기술을 이용한 Hollow형 실리콘 미세바늘 어레이의 제작)

  • Kim, Seung-Kook;Chang, Jong-Hyeon;Kim, Byoung-Min;Yang, Sang-Sik;Hwang, In-Sik;Pak, Jung-Ho
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.56 no.12
    • /
    • pp.2221-2225
    • /
    • 2007
  • Hollow-type microneedle array can be used for painless, continuous and stable drug delivery through a human skin. The needles must be sharp and have sufficient length in order to penetrate the epidermis. An array of hollow-type silicon microneedles was fabricated by using deep reactive ion etching and HNA wet etching with two oxide masks. Isotropic etching was used to create tapered tips of the needles, and anisotropic etching of Bosch process was used to make the extended length and holes of microneedles. The microneedles were formed by three steps of isotropic, anisotropic, and isotropic etching in order. The holes were made by one anisotropic etching step. The fabricated microneedles have $170{\mu}m$ width, $40{\mu}m$ hole diameter and $230{\mu}m$ length.

Fabrication of Novel Metal Field Emitter Arrays(FEAs) Using Isotropic Silicon Etching and Oxidation

  • Oh, Chang-Woo;Lee, Chun-Gyoo;Park, Byung-Gook;Lee, Jong-Duk;Lee, Jong-Ho
    • Journal of Electrical Engineering and information Science
    • /
    • v.2 no.6
    • /
    • pp.212-216
    • /
    • 1997
  • A new metal tip fabrication process for low voltage operation is reported in this paper. The key element of the fabrication process is that isotropic silicon etching and oxidation process used in silicon tip fabrication is utilized for gate hole size reduction and gate oxide layer. A metal FEA with 625 tips was fabricated in order to demonstrate the validity of the new process and submicron gate apertures were successfully obtained from originally 1.7$\mu\textrm{m}$ diameter mask. The emission current above noise level was observed at the gate bias of 50V. The required gate voltage to obtain the anode current of 0.1${\mu}\textrm{A}$/tip was 74V and the emission current was stable above 2${\mu}\textrm{A}$/tip without any disruption. The local field conversion factor and the emitting area were calculated as 7.981${\times}$10\ulcornercm\ulcorner and 3.2${\times}$10\ulcorner$\textrm{cm}^2$/tip, respectively.

  • PDF

Compressive Fracture Behaviors of Transversely Isotropic Jointed Rock Model with an Opening (공동을 포함하는 횡등방성 절리암반 모델의 압축 파괴거동)

  • SaGong, Myung;Kim, Se-Chul;Yoo, Jea-Ho;Park, Du-Hee;Lee, J.S.
    • Proceedings of the Korean Geotechical Society Conference
    • /
    • 2009.03a
    • /
    • pp.58-63
    • /
    • 2009
  • Biaxial compression test was conducted on a transversely isotropic synthetic jointed rock model for the understanding of the fracture behaviors of a sedimentary or metamorphic rocks with well developed bedding or foliation in uni-direction. The joint angles employed for the model are 30, 45, and 60 degrees to the horizontal, and the synthetic rock mass was made of early strength cement. From the biaxial compression test, initiation propagation of tensile cracks at norm to the joint angle was found. The propagated tensile cracks eventually developed rock blocks, which was dislodged from the rock mass. Furthermore, the propagation process of the tensile cracks varies with joint angle: lower joint angle model shows more stable and progressive tensile crack propagation. The experiment results were validated from the simulation by using discrete element method PFC 2D. From the simulation, as has been observed from the test, a rock mass with lower joint angle produces wider damage region and rock block by tensile cracks. In addition, a rock model with lower joint angle shows a progressive tensile cracks generation around the opening from the investigation of the interacted tensile cracks.

  • PDF

Preparation and Properties of W/O Emulsion by D Phase Emulsification (D상 유화물을 이용한 W/O 유화물의 제조와 특성)

  • Kim, H.J.;Jeong, N.H.;Yun, Y.K.;Park, K.S.;Nam, K.D.
    • Journal of the Korean Applied Science and Technology
    • /
    • v.15 no.2
    • /
    • pp.25-32
    • /
    • 1998
  • The emulsion stability of W/O emulsion prepared by D phase emulsification during storage and handling is studied by using phase diagrams. The process of D phase emulsification begins with the formation of isotropic surfactant solution, followed by formation of oil-in-surfactant (O/D) gel emulsion by dispersion of octamethylcyclotetrasiloxane(OMCS) in the surfactant solution. Polyols were essential components for this purpose. To understand the function of polyols, the solution behavior of nonionic surfactant/oil/water/polyol systems were investigated by the ternary phase diagrams of polyoxyethylene oleyl ether/OMCS/propylene glycol(PG) aqueous solutions. The addition of PG increased the solubility of oil in the isotropic surfactant phase. D phase emulsification method has been applied to a new type of cosmetics. By using this emulsification technique, O/W emulsion were formed without a need for adjust of HLB. Fine and stable W/O emulsions were prepared by D phase emulsion.

HEAT KERNEL ESTIMATES FOR DIRICHLET FRACTIONAL LAPLACIAN WITH GRADIENT PERTURBATION

  • Chen, Peng;Song, Renming;Xie, Longjie;Xie, Yingchao
    • Journal of the Korean Mathematical Society
    • /
    • v.56 no.1
    • /
    • pp.91-111
    • /
    • 2019
  • We give a direct proof of the sharp two-sided estimates, recently established in [4, 9], for the Dirichlet heat kernel of the fractional Laplacian with gradient perturbation in $C^{1,1}$ open sets by using Duhamel's formula. We also obtain a gradient estimate for the Dirichlet heat kernel. Our assumption on the open set is slightly weaker in that we only require D to be $C^{1,{\theta}}$ for some ${\theta}{\in}({\alpha}/2,1]$.

Seismic Traveltime Tomography in Inhomogeneous Tilted Transversely Isotropic Media (불균질 횡등방성 매질에서의 탄성파 주시토모그래피)

  • Jeong, Chang-Ho;Suh, Jung-Hee
    • Geophysics and Geophysical Exploration
    • /
    • v.10 no.4
    • /
    • pp.229-240
    • /
    • 2007
  • In this study, seismic anisotropic tomography algorithm was developed for imaging the seismic velocity anisotropy of the subsurface. This algorithm includes several inversion schemes in order to make the inversion process stable and robust. First of all, the set of the inversion parameters is limited to one slowness, two ratios of slowness and one direction of the anisotropy symmetric axis. The ranges of the inversion parameters are localized by the pseudobeta transform to obtain the reasonable inversion results and the inversion constraints are controlled efficiently by ACB(Active Constraint Balancing) method. Especially, the inversion using the Fresnel volume is applied to the anisotropic tomography and it can make the anisotropic tomography more stable than ray tomography as it widens the propagation angle coverage. The algorithm of anisotropic tomography is verified through the numerical experiments. And, it is applied to the real field data measured at limestone region and the results are discussed with the drill log and geological survey data. The anisotropic tomography algorithm will be able to provide the useful tool to evaluate and understand the geological structure of the subsurface more reasonably with the anisotropic characteristics.

The Study on the Improvement of Mechanical Performance due to Change in Temperature and Sputtering by $SiO_2/Ag$ Material of Bonded Dissimilar Materials with Cylindrical Shape (원통형 이종 접합 소재의 $SiO_2/Ag$스퍼터 증착과 온도 변화에 따른 기계적 특성에 관한 연구)

  • Lee, Seung-Hyun;Choi, Seong-Dae;Lee, Jung-Hyong
    • Journal of the Korean Society of Manufacturing Process Engineers
    • /
    • v.11 no.3
    • /
    • pp.138-145
    • /
    • 2012
  • The material used in this study is dielectric and ferrite. Because of the unique characteristics of the material, it is easily exposed to external shocks and pressure, which cause damage to the product. However, after being processed under high-temperature environment repeatedly, the mechanical strength of the product is greatly increased due to the change of the electrical properties. In this paper, dielectric and bonded ferrite material was tested for the material properties. The equipment for this experiment was produced and tested to allow Cylindrical and Three-dimensional geometry of the product for the vacuum deposition. For Cylindrical shape of the product, in order to obtain the equivalent film thickness, the device is constructed in a vacuum chamber which gives arbitrary revolving and rotating capability. The electrical performance of the product is obtained through this process as well. However, as mentioned above, with repeating processes under high temperature and exposure to external environment, the product is easy to be broken. This experiment has enabled us to find out a stable condition to apply the communication of the RF high frequency to each of the core elements, such as Ferrite and Dielectric which is then used for the mechanical strength of the Raw material, hetero-junction material, Hetero-junction Ag Coating material and hetero-junction Ag Coating SiO2 Coating material respectively.

An Implementation of Temperature Independent Bias Scheme in Voltage Detector (온도에 무관한 전압검출기의 바이어스 구현)

  • Moon, Jong-Kyu;Kim, Duk-Gyoo
    • Journal of the Institute of Electronics Engineers of Korea SC
    • /
    • v.39 no.6
    • /
    • pp.34-42
    • /
    • 2002
  • In this paper, we propose a temperature independent the detective voltage source in voltage detector. The value of a detective voltage source is designed to become m times of silicon bandgap voltage at zero absolute temperature. By properly choosing the temperature coefficient of diode, the temperature coefficient of a concave voltage nonlinearities generated by the ${\Delta}V_{BE}$ section of diode between base and emitter of transistors with a different area can be summed with convex nonlinearities the $V_{BE}$ voltage to achieve the near zero temperature coefficient of the detective voltage source. We designed that the value of a detective voltage can be varied by ${\Delta}V_{BE}$, the $V_{BE}$multiplier circuit and resistor. In order to verify the performance of a proposed detective voltage source, we manufactured the voltage detector IC for 1.9V which is fabricated in $6{\mu}m$ Bipolar technology and measured the operating characteristics, the temperature coefficient of a detective voltage. To reduce the deviation of a detective voltage in the IC process step, we introduced a trimming technology, ion implantation and an isotropic etching. In manufactured IC, the detective voltage source could achieve the stable temperature coefficient of 29ppm/$^{\circ}C$ over the temperature range of -30$^{\circ}C$ to 70$^{\circ}C$. The current consumption of a voltage detector constituted by the proposed detective voltage source is $10{\mu}A$ from 1.9V-supply voltage at room temperature.