• Journal of the Earthquake Engineering Society of Korea
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• v.12 no.4
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• pp.55-61
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• 2008

One of the most recent base-isolation systems to improve the earthquake resistance of structures is the Friction Pendulum System(FPS). Simple in design but with versatile properties, the FPS has been used in some of the world s largest seismically isolated buildings, bridges and chemical tanks. FPS using PTFE(Polytetrafl-uoroethylene) based material has been developed to provide a simple and effective way for structures to achieve earthquake resistance. PTFE materials are soft, and are apt to become deformed easily after a few working cycles. In this study, magnetic force is used rather than the usual PTFE materials to improve the material shortcomings. A MF-FPS(Magnetic force-Friction Pendulum System) is proposed, and us shown to effectively protect structures against earthquakes. To demonstrate the advantages of this new system, the MF-FPS is compared with FPS as an attempt to prove its performance. A six-degree-of-freedom model is considered as a numerical example. The ground acceleration data of El Centro, Mexico and Gebze earthquakes are used as seismic excitations. The results showed that MF-FPS improved performance compared with FPS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Smart Structures and Systems
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• v.17 no.5
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• pp.691-708
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• 2016

Recently, number of smart material are investigated and widely used in civil construction and other industries. Present study investigates the application of smart semi-active piezoelectric friction damper (PFD) made with piezoelectric material for the seismic control of the horizontally curved bridge isolated with lead rubber bearing (LRB). The main aim of the study is to investigate the effectiveness of hybrid system and to find out the optimum parameters of PFD for seismic control of the curved bridge. The selected curved bridge is a continuous three-span concrete box girder supported on pier and rigid abutment. The PFD is located between the deck and abutments or piers in chord and radial directions. The bridge is excited with four different earthquake ground motions with all three components (i.e. two horizontal and a vertical) having different characteristics. It is observed that the use of semi-active PFD with LRB is quite effective in controlling the response of the curved bridge as compared with passive system. The incorporation of the smart damper requiring small amount of energy in addition with an isolation system can be used for effective control the curved bridge against the dynamic loading.

• Journal of Environmental Health Sciences
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• v.31 no.1
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• pp.31-38
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• 2005

An anti-fungal material produced by actinomycetes was isolated from domestic soil. This actinomycetes was identified as Streptomyces albogriseus by 16S rDNA sequence. YEME (yeast extract 4 g, malt extract 10 g, glucose 4 g, D.W 1l, pH 7.00.2) medium was used for production of anti-fungal materials. S. albogriseus was cultured in a shaking incubator for 2 weeks at 150 rpm and $25^{\circ}C$. An anti-fungal material produced by S. albogriseus was identified at 340 nm by uv/vis- spectrometer and it showed powerful anti-fungal activity. This is the first report that secondary metabolite produced by S. albogriseus showed an activity against phytopathogenic fungi such as Collectrichum coccodes, Botrytis cinerea, Cladosporium cucumerinum, Didymella bryoniae.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.29-33
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.356-357
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• 2005

Chemical mechanical polishing (CMP) allows the planarization of wafers with two or more materials at their surfaces. Especially, polishing pad is considered as one of the most important consumables because of its properties. Subject of this investigation is to apply CMP for planarization of shallow trench isolation structure using microstructure pad. Microstructure pad is designed to have uniform structure on its surface and fabricated by micro-molding technology. And then STI CMP performances such as oxide dishing and nitride corner rounding are evaluated.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.4
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• pp.983-990
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• 2010

In this paper, we designed and implemented the MIMO antenna for LTE(Long Term Evolution), supposed to be a next generation communications network, DCS1800, DCS1900 and WCDMA. Using conventional monopole antenna with MD material results in good characteristics, miniaturization for LTE band and as well as broadbanding for DCS, WCDMA band. The performance of the proposed MIMO antenna shows VSWR < 2, under -10 dB of isolation and the gain is -1.66 ~ 1.33 dBi for LTE(Long Term Evolution), DCS1800, DCS1900 and WCDMA, which has omnidirectional radiation pattern.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.565-568
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm 6.7$$\times$$10^{-3}$/$^{\circ}C$ and $\pm 8.2$$\times$$10^{-4}$/$^{\circ}C$respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and hip high-temperature operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.9-12
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• 2004

In this paper, a new small sized Lateral Trench Electrode Power MOS was proposed. This new structure, called LTEMOS(Lateral Trench Electrode Power MOS), was based on the conventional lateral power MOS. But the entire electrodes of LTEMOS were placed in trench oxide. The forward blocking voltage of the proposed LTEMOS was improved by 1.5 times with that of the conventional lateral power MOS. The forward blocking voltage of LTEMOS was about 240 V. At the same size, an improvement of the forward blocking voltage of about 1.5 times relative to the conventional MOS was observed by using ISE-TCAD which was used for analyzing device's electrical characteristics. Because all of the electrodes of the proposed device were formed in each trench oxide, the electric field was crowded to trench oxide and punch-through breakdown was occurred, lately.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.4
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• pp.34-40
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• 2019

We performed shape optimization of an anti-vibration rubber assembly which is used in the field option cabin of agricultural tractors to improve the vibration isolation capability. To characterize the hyper-elastic material property of rubber, we performed uniaxial and biaxial tension tests and used the data to calibrate the material model applied in the finite element analyses. We conducted a field test to characterize the input excitation from the tractor and the output response at the cabin frame. To account for the nonlinear behavior of rubber, we performed static analyses to derive the load-displacement curve of the anti-vibration rubber assembly. The stiffness of the rubber assembly could be calculated from this curve and was input to the harmonic analyses of the cabin. We compared the results with the test data for verification. We utilized Taguchi's parameter design method to determine the optimal shape of the anti-vibration rubber assembly and found two distinct shapes with reduced stiffness. Results show that the vibration at the cabin frame was reduced by approximately 35% or 47.6% compared with the initial design using the two optimized models.