Fabrication and Characteristics of High-sensitivity Si Hall Sensors for High-temperature Applications

고온용 고감도 실리콘 홀 센서의 제작 및 특성

  • 정귀상 (동서대학교 정보통신공학부) ;
  • 노상수 (부산대학교 재료공학부)
  • Published : 2000.07.01

Abstract

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm 6.7$$\times$$10^{-3}$/$^{\circ}C$ and $\pm 8.2$$\times$$10^{-4}$/$^{\circ}C$respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and hip high-temperature operation.

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