• Journal of the Korea institute for structural maintenance and inspection
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• v.12 no.1
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• pp.127-134
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• 2008

For more districted seismic design and attemped multi-bridge continuity, the existing seismic design is difficulted to treat seismic activity. So, many company applied multi-fixed point and damper or isolator, which is effective for decreasing seismic energy, on period shift, decentralization and damping. But, there is hard to design special bridge with adjusted seismic system because of absence seismic device and insufficient design experience. Therefore, the study on behavior characteristics of designed bridge with various seismic device is performed to utilize the result of this for selection of adequate seismic device.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1324-1326
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• 1998

To drive motor or heating machine, it needs the electric power system like the apparatus of inverter. This electric power system obviously comprises power switching devices and drivers to run them. And this system has the topology comprised one/many arm(s), - each arm has high side switching device and low side switching device. Transformer, photocoupler, and HVIC having functions of isolation and level shift which are important thing to drive high side switching device are used as component of drivers in conventional apparatus. Piezoelectric transformers are proposed in this paper, and applied to drive high side swiching device. Through experiments, the possiblities of driving high side switching device are presented and the problems are mooted concurrently. But, we also consider a counterplan for solving the mooted trouble issues.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2458-2460
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• 1998

To drive motor or heating machine, it needs the electric power system like the apparatus of inverter. This electric power system obviously comprises power switching devices and drivers to run them. And this system has the topology comprised one/many arm(s), - each arm has high side switching device and low side switching device. Transformer, photocoupler, and HVIC having functions of isolation and level shift which are important thing to drive high side switching device are used as component of drivers in conventional apparatus. Piezoelectric transformers are proposed in this paper, and applied to drive high side swiching device. Through experiments, the possiblities of driving high side switching device are presented and the problems are mooted concurrently. But, we also consider a counterplan for solving the mooted trouble issues.

• Structural Engineering and Mechanics
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• v.50 no.1
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• pp.89-103
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• 2014

According to experimental studies made so far, design formula of shear characteristics suggested by ISO 22762 and JEAG 4614, representative design code for Lead Rubber Bearing(LRB) shows dependence caused by changes in compressive stress. Especially, in the case of atypical special structure, such as a nuclear power structure, placement of seismic isolation bearing is more limited compared to that of existing structures and design compressive stress is various in sizes. As a result, there is a difference between design factor and real behavior with regards to shear characteristics of base isolation device, depending on compressive stress. In this study, a full-scale low hardness device of LRB, representative base isolation device was manufactured, analyzed, and then evaluated through an experiment on shear characteristics related to various compressive stresses. With design compressive stress of the full-scale LRB (13MPa) being a basis, changes in shear characteristics were analyzed for compressive stress of 5 MPa, 10 MPa, 13 MPa, 15 MPa, and 20 MPa based on characteristics test specified by ISO 22762:2010 and based on the test result, a regression analysis was made to offer an empirical formula. With application of proposed design formula which reflected the existing design formula and empirical formula, trend of horizontal characteristics was analyzed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.1
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• pp.127-132
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• 2012

In this paper, the edge effects of proposed structure in active region for high voltage in shallow trench isolation for very large integrated MOSFET were simulated. Shallow trench isolation (STI) is a key process component in CMOS technologies because it provides electrical isolation between transistors and transistors. As a simulation results, shallow trench structure were intended to be electric functions of passive, as device dimensions shrink, the electrical characteristics influence of proposed STI structures on the transistor applications become stronger the potential difference electric field and saturation threshold voltage.

• Journal of the Earthquake Engineering Society of Korea
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• v.21 no.6
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• pp.265-275
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• 2017

In order to improve the seismic performance of structures, friction pendulum system (FPS) is the most commonly used seismic isolation device in addition to lead rubber bearing (LRB) in high seismicity area. In a nuclear power plant (NPP) with a large self weight, it is necessary to install a large number of seismic isolation devices, and the position of the center of rigidity varies depending on the arrangement of the seismic isolation devices. Due to the increase in the eccentricity, which is the difference between the center of gravity of the nuclear structure and the center of stiffness of the seismic isolators, an excessive seismic response may occur which could not be considered at the design stage. Three different types of eccentricity models (CASE 1, CASE 2, and CASE 3) were used for seismic response evaluation of seismically isolated NPP due to the increase of eccentricity (0%, 5%, 10%, 15%). The analytical model of the seismic isolation system was compared using the equivalent linear model and the bilinear model. From the results of the seismic response of the seismically isolated NPP with increasing eccentricity, it can be observed that the effect of eccentricity on the seismic response for the equivalent linear model is larger than that for the bilinear model.

• Earthquakes and Structures
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• v.13 no.6
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• pp.561-572
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• 2017

Seismic base isolation has been accepted as one of the most popular design procedures to protect important structures against earthquakes. However, due to lack of information and experimental data the application of base isolation is quite limited to nuclear power plant (NPP) industry. Moreover, the effects of inelastic behavior of soil beneath base-isolated NPP have raised questions to the effectiveness of isolation device. This study applies the wavelet analysis to investigate the effects of soil-structure interaction (SSI) on the seismic response of a base-isolated NPP structure. To evaluate the SSI effects, the NPP structure is modelled as a lumped mass stick model and combined with a soil model using the concept of cone models. The lead rubber bearing (LRB) base isolator is used to adopt the base isolation system. The shear wave velocity of soil is varied to reflect the real rock site conditions of structure. The comparison between seismic performance of isolated structure and non-isolated structure has drawn. The results show that the wavelet analysis proves to be an efficient tool to evaluate the SSI effects on the seismic response of base-isolated structure and the seismic performance of base-isolated NPP is not sensitive to the effects in this case.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.169-172
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• 2004

Deep sub-micron device required to get the superior ultra thin gate oxide characteristics. In this research, I will recommend a novel shallow trench isolation structure(STI) for thin gate oxide and a $N_2$O gate oxide 30 $\AA$ by NO ambient process. The local oxidation of silicon(LOCOS) isolation has been replaced by the shallow trench isolation which has less encroachment into the active device area. Also for $N_2$O gate oxide 30 $\AA$, ultra thin gate oxide 30 $\AA$ was formed by using the $N_2$O gate oxide formation method on STI structure and LOCOS structure. For the metal electrode and junction, TiSi$_2$ process was performed by RTP annealing at 850 $^{\circ}C$ for 29 sec. In the viewpoints of the physical characteristics of MOS capacitor, STI structure was confirmed by SEM. STI structure was expected to minimize the oxide loss at the channel edge. Also, STI structure is considered to decrease the threshold voltage, result in a lower Ti/TiN resistance( Ω /cont.) and higher capacitance-gate voltage(C- V) that made the STI structure more effective. In terms of the TDDB(sec) characteristics, the STI structure showed the stable value of 25 % ～ 90 % more than 55 sec. In brief, analysis of the ultra thin gate oxide 30 $\AA$ proved that STI isolation structure and salicidation process presented in this study. I could achieve improved electrical characteristics and reliability for deep submicron devices with 30 $\AA$ $N_2$O gate oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.14-17
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• 2000

The rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STi CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. We studied the current sensing method in STI-CMP with the reverse moat pattern.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.33-36
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The rise throughput and the stability in the device fabrication can be obtained by applying of CMP process to STI structure in 0.18$\mu\textrm{m}$ m semiconductor device. The reverse moat process has been added to employ in of each thin films in STI-CMP was not equal, hence the devices must to be effected, that is, the damage was occurred in the device area for the case of excessive CMP process and the nitride film was remained on the device area for the case of insufficient CMP process, and than, these defects affect the device characteristics. Also, we studied the High Selectivity Slurry(HSS) to perform global planarization without reverse moat step.