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http://dx.doi.org/10.6109/jkiice.2012.16.1.127

Simulations of Fabrication and Characteristics according to Structure Formation in Proposed Shallow Trench Isolation  

Lee, Yong-Jae (동의대학교 전자공학과)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.16, no.1, 2012 , pp. 127-132 More about this Journal
Abstract
In this paper, the edge effects of proposed structure in active region for high voltage in shallow trench isolation for very large integrated MOSFET were simulated. Shallow trench isolation (STI) is a key process component in CMOS technologies because it provides electrical isolation between transistors and transistors. As a simulation results, shallow trench structure were intended to be electric functions of passive, as device dimensions shrink, the electrical characteristics influence of proposed STI structures on the transistor applications become stronger the potential difference electric field and saturation threshold voltage.
Keywords
Shallow Trench Isolation; moat; High density oxide; Chemical Mechanical polishing;
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