• KOREAN JOURNAL OF CROP SCIENCE
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• v.53 no.2
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• pp.150-155
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• 2008

This experiment was carried out to investigate the effect of proton ion and gamma-ray irradiation on microspore culture of the flower buds of $M_2$ generation in winter type of Brassica napus L. ssp. oleifera. The seeds of three rape varieties, 'Halla', 'Naehan' and 'Tammi' were pretreated with proton ion and gamma-ray 400 Gy and 600 Gy, respectively. When microspore culture techniques were used, embryogenesis was increased in some varieties by proton ion and gamma-ray irradiation treated flower buds of $M_2$ generation than control. In genotypes 'Naehan' showed the highest embryo production frequency, but 'Tammi' showed lowest embryo production frequency. Some of the embryoids developed directly into plantlets, whereas others developed abnormally multilobe. Plants were regenerated and successfully acclimatized in pots.

• Korean Journal of Materials Research
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• v.15 no.7
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• pp.458-464
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• 2005

In microelectronics packaging, the reliability of the metal/polymer interfaces is an important issue because the adhesion strength between dissimilar materials is often inherently poor. The modification of polymer surfaces by ion beam irradiation and rf plasma is commonly used to enhance the adhesion strength of the interface. T-peel strengths were measured using a Cu/polyimide system under varying $N_2^+$ ion beam irradiation conditions for pretreatment. The measured T-peel strength showed reversed camel back shape regarding the fixed metal-layer thickness, which was quite different from the results of the 90° peel test. The elementary analysis suggests that the variation of the T-peel strength is a combined outcome of the plastic bending work of the metal and polymer strips. The results indicate that the peel strength increases with $N_2^+$ ion beam irradiation energy at the fixed metal-layer thickness.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.92-96
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• 2002

In this paper, we treated the Ni$_3$Al based alloy samples with intense pulsed ion beams (IPIB) at the beam parameters of 250KV acceleration voltage, 100 - 200 A/cm$^2$ current density and 60 u pulse duration. We simulated the thermal-mechanical process near the surface of Ni$_3$Al based alloy with our STEIPIB codes. The surface morphology and the cross-section microstructures of samples were observed with SEM, the composition of the sample surface layer was determined by X-ray Energy Dispersive Spectrometry (XEDS) and the microstructure on the surface was observed by Transmission Electron Microscope (TEM). The results show that heating rate increases with the current density of IPIB and cooling rate reached highest value less than 150 A/cm$^2$. The irradiation of IPIB induced the segregation of Mo and adequate beam parameter can improve anti-oxidation properly of IC6 alloy. Some craters come from extraneous debris and liquid droplets, and some maybe due to the melting of the intersection region of interphase. Increasing the pulse number enlarges average size of craters and decreases number density of craters.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.326-329
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• 2005

As a flexible method to fabricate sub-micrometer patterns, Focused Ion Beam (FIB) instrument and Self-Assembled Monolayer (SAM) resist are introduced in this work. FIB instrument is known to be a very precise processing machine that is able to fabricate micro-scale structures or patterns, and SAM is known as a good etch resistance resist material. If SAM is applied as a resist in FIB processing fur fabricating nano-scale patterns, there will be much benefit. For instance, low energy ion beam is only needed for machining SAM material selectively, since ultra thin SAM is very sensitive to $Ga^+$ ion beam irradiation. Also, minimized beam spot radius (sub-tens nanometer) can be applied to FIB processing. With the ultimate goal of optimizing nano-scale pattern fabrication process, interaction between SAM coated specimen and $Ga^+$ ion dose during FIB processing was observed. From the experimental results, adequate ion dose for machining SAM material was identified.

• Nuclear Engineering and Technology
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• v.51 no.8
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• pp.1970-1977
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• 2019

Understanding the irradiation hardening effect of structural steels under various irradiation conditions plays an important role in developing advanced nuclear systems. Such being the case, a crystal plasticity model for body-centered cubic (BCC) crystal based on the density of dislocations and irradiation defects is summarized and numerically implemented in this paper. Based on this model, nano-indentation hardness of Chinese A508-3 steels with ion irradiation is calculated. Very good agreement is observed between simulation and experimental data of several different irradiation doses subjected to various operating temperatures, from which, it can be concluded that indentation hardness increases with increasing irradiation dose at both room temperature and high temperature. Consequently, the validity of this model has been proved properly, and furthermore, the model established in this paper could guide the study of irradiation hardening effect and temperature effect to some extent.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.605-606
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• 2008

• Journal of the Korean institute of surface engineering
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• v.53 no.6
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• pp.280-284
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• 2020

Electron beam irradiation is widely used as a type of surface modification technology to advance surface properties. In this study, the effect of electron beam irradiation on properties, such as surface hardness, wear resistance, roughness, and critical load of Titanium Aluminium nitride (TiAlN) films was investigated. TiAlN films were deposited on the SKD-61 substrate by using cathode arc ion plating. After deposition, the films were bombarded with intense electron beam for 10 minutes. The surface hardness was increased up to 4520 HV at electron irradiation energy of 1500 eV. In addition, surface root mean square (RMS) roughness of the films irradiated at 1500 eV shows the lowest roughness of 484 nm in this study.

• Polymer(Korea)
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• v.37 no.4
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• pp.431-436
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• 2013

Polycarbonate (PC) films have been irradiated with various kinds of ions according to energy and dose. Change of the optical transmittance and chemical characteristics were confirmed by UV-VIS and FTIR (ATR) spectroscopy respectively. These UV-A block in 400 nm was variable from 10 to 100% according to energy and doses. Surface electrical resistance of PC film irradiated by ion beam was $10^6-10^{13}{\Omega}/cm^2$, which reveal variation of conduction. Contact angle of film irradiated by ion beam was decreased than the pristine film. Polymer surface morphology was examined by means of atomic force microscopy (AFM). As expected, degradation of polymer film was higher after irradiation with heavier Xe ions but the roughness in the polymer surface morphology were more pronounced for Ar ions. This observed effect can be explained by stronger compaction of polymer surface layer in the case of Xe irradiation, connected with a reduction of free volume available.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.530-531
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• 2013

3 MeV protonirradiated SrTiO3 (STO) single crystal exhibits a blue and green mixed luminescence. However, the same proton irradiated STO deposited with very thin Pt layer does not show any luminescence. This Pt layer involved in preventing the damage caused by arcingthat comes from tens of kV surface voltage build-up due to secondary electron induced charge up at the surface of insulator during ion beam irradiation. It implies that luminescence of ion irradiated STO originated from the modified STO surface layer caused by arcing rather than direct ion beam irradiation effect. Atmospheric pressure plasma, a simple and cost-effective method, treated STO also exhibits the same kind of blue and green mixed luminescence as the ion beam treated STO, because this plasma also creates a surface damage layer by arcing.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.261-264
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• 2014

$SrTiO_3$ (STO) single crystal irradiated with a 3-MeV proton beam exhibits blue and green mixed luminescence. However, the same proton beam when used to irradiate STO with a very thin layer of deposited Pt does not show any luminescence. This Pt layer prevents any damage which may otherwise be caused by arcing, which stems from the accumulated surface voltage of tens of kV due to the charge induced by secondary electrons on the surface of the insulator during the ion beam irradiation process. Hence, the luminescence of ion-irradiated STO originates from the modification of the STO surface layer caused by arcing rather than from any direct ion beam irradiation effect. STO treated with atmospheric-pressure plasma, a simple and cost-effective method, also exhibits the same type of blue and green mixed luminescence as STO treated with an ion beam, as the plasma also creates a layer of surface damage due to arcing.