• Applied Microscopy
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• v.50
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• pp.22.1-22.6
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• 2020

In-situ transmission electron microscopy (TEM) holders that employ a chip-type specimen stage have been widely utilized in recent years. The specimen on the microelectromechanical system (MEMS)-based chip is commonly prepared by focused ion beam (FIB) milling and ex-situ lift-out (EXLO). However, the FIB-milled thin-foil specimens are inevitably contaminated with Ga⁺ ions. When these specimens are heated for real time observation, the Ga⁺ ions influence the reaction or aggregate in the protection layer. An effective method of removing the Ga residue by Ar⁺ ion milling within FIB system was explored in this study. However, the Ga residue remained in the thin-foil specimen that was extracted by EXLO from the trench after the conduct of Ar⁺ ion milling. To address this drawback, the thin-foil specimen was attached to an FIB lift-out grid, subjected to Ar⁺ ion milling, and subsequently transferred to an MEMS-based chip by EXLO. The removal of the Ga residue was confirmed by energy dispersive spectroscopy.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.16 no.12 s.117
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• pp.1272-1278
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• 2006

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin(Au/Sn) eutectic solder bonding. The membrane chip has $2.5mm{\times}2.5mm$, 0.5${\mu}m$ thick low stress silicon nitride membrane, $2mm{\times}2mm$ Au/Ni/Cr membrane electrode, and 3${\mu}m$ thick Au/Sn layer. The backplate chip has $2mm{\times}2mm$, 150${\mu}m$ thick single crystal silicon rigid backplate, $1.8mm{\times}1.8mm$ backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50{\sim}60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is 39.8 ${\mu}V/Pa$(-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.4
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• pp.445-453
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• 2015

A fully integrated cost-effective and low-power single chip Lithium-Ion (Li-Ion) battery protection IC (BPIC) for portable devices is presented. The control unit of the battery protection system and the MOSFET switches are integrated in a single package to protect the battery from over-charge, over-discharge, and over-current. The proposed BPIC enters into low-power standby mode when the battery becomes over-discharged. A new auto release function (ARF) is adopted to release the BPIC from standby mode and safely return it to normal operation mode. A new delay shorten mode (DSM) is also proposed to reduce the test time without increasing pin counts. The BPIC implemented in a $0.18-{\mu}m$ CMOS process occupies an area of $750{\mu}m{\times}610{\mu}m$. With DSM enabled, the measured test time is dramatically reduced from 56.82 s to 0.15 s. The BPIC chip consumes $3{\mu}A$ under normal operating conditions and $0.45{\mu}A$ under standby mode.

• Journal of Astronomy and Space Sciences
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• v.29 no.3
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• pp.315-320
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• 2012

We developed a mass-memory chip by staking 1 Gbit double data rate 2 (DDR2) synchronous dynamic random access memory (SDRAM) memory core up to 4 Gbit storage for future satellite missions which require large storage for data collected during the mission execution. To investigate the resistance of the chip to the space radiation environment, we have performed heavy-ion-driven single event experiments using Heavy Ion Medical Accelerator in Chiba medium energy beam line. The radiation characteristics are presented for the DDR2 SDRAM (K4T1G164QE) fabricated in 56 nm technology. The statistical analyses and comparisons of the characteristics of chips fabricated with previous technologies are presented. The cross-section values for various single event categories were derived up to ~80 $MeVcm^2/mg$. Our comparison of the DDR2 SDRAM, which was fabricated in 56 nm technology node, with previous technologies, implies that the increased degree of integration causes the memory chip to become vulnerable to single-event functional interrupt, but resistant to single-event latch-up.

• The Korean Journal of Food And Nutrition
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• v.18 no.4
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• pp.316-324
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• 2005

The objectives of this study were to examine effect of ion chip and yellow soil on the growth and physicochemical characteristics of soybean sprouts. The weight and length increased rapidly in soybean sprouts cultivated for 4 days and then the increases slowed. Ascorbic acid increased rapidly after day 6 in soybean sprouts cultivated with ionized water (I.W), $1.0\%$ yellow soil in tap water (T.W+l.0) and $1.0\%$ yellow soil in ionized water (I.W+l.0). The detected content of minerals such as Mg, Ca, K and Fe in soybean sprouts was higher than other minerals. Iron content was the highest in soybean sprouts cultivated by I.W+1.0. The detected levels of glutamic acid in soybean sprouts cultivated for 4 days with ionized water was higher than in those grown with tap water. In all soybean sprouts, nucleotides such as UMP, CMP, AMP, Hx and soluble free sugars like sucrose, raffinose, stachylose were detected, and the levels of UMP were found to be the highest among nucleotides and sucrose among free sugars.

• Journal of Sensor Science and Technology
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• v.16 no.1
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• pp.62-67
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• 2007

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin (Au/Sn) eutectic solder bonding. The membrane chip has 2.5 mm${\times}$2.5 mm, $0.5{\mu}m$ thick low stress silicon nitride membrane, 2 mm${\times}$2 mm Au/Ni/Cr membrane electrode, and $3{\mu}m$ thick Au/Sn layer. The backplate chip has 2 mm${\times}$2 mm, $150{\mu}m$ thick single crystal silicon rigid backplate, 1.8 mm${\times}$1.8 mm backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50-60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is $39.8{\mu}V/Pa$ (-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• The korean journal of orthodontics
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• v.21 no.1 s.33
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• pp.7-16
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• 1991

To estimate the possibility of the application of TiN ion-plating to the orthodontic appliance, colorimetric properties, and characteristics of ion-plated film as well as adhesive strength of TiN film to the substrate and mechanical properties of ion-plated orthodontic appliance were investigated. The obtained results were as follows: 1) TiN ion-plated film had the colorimetric properties which were the hue of about 2.5 Y, the brightness of about 6, and the chroma of about 4 by the standard color chip of JIS. 2) TiN ion-plated film was $2{\mu}m$ in thickness and its deposition pattern was rather irregular. 3) TiN phase was confirmed on the X-ray diffraction pattern. 4) Critical load for delamination of ion-plated film from stainless steel band was 10N. 5) Tensile and yield strength of ion-plated specimen was increased about 10Kg $f/mm^2$, while elongation was decreased $1\%$ compairing to the values of the non ion-plated specimen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.175-180
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• 2003

As the integrated circuit device shrinks to the deep submicron regime, the ion implantation process with high ion dose has been attracted beyond the conventional ion implantation technology. In particular, for the case of boron ion implantation with low energy and high dose, the stabilization and throughput of semiconductor chip manufacturing are decreasing because of trouble due to the machine conditions and beam turning of ion implanter system. In this paper, we focused to the improved characteristics of processing conditions of ion implantation equipment through the modified deceleration mode. Thus, our modified recipe with low energy and high ion dose can be directly apply in the semiconductor manufacturing process without any degradation of stability and throughput.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.10a
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• pp.463-467
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• 2004

This paper presents the fabrication possibility of the micro actuator which uses a micro-thermal bubble, generated b micro-heater under pulse heating. The valve-less micropump using the diffuser/nozzle is consists of the lower plate, he middle plate, the upper plate. The lower plate includes the channel and chamber are fabricated on high processability silicon wafer by the DRIE(Deep Reactive Ion Etching) process. The middle plate includes the chamber and diaphragm d the upper plate is the micro-heater. The Micropump is fabricated by bonding process of the three layer. This paper resented the possibility of the PCR chip operation by the fabricated micropump.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.266-269
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• 2000

As the device geometry continuously shrink down less than sub-quarter micrometer, DRAM makers are going to replace conventional tungsten-polycide with tungsten bit-line structure in order to reduce the chip size and use it as a local interconnection. In this paper we showed low resistance and leakage tungsten bit-line process with various RTP(Rapid Thermal Process) temperature. As a result we obtained that major parameters impact on tungsten bit-line process are RTP Anneal temperature and BF2 ion implantation dopant. These tungsten bit-line process are promising to fabricate high density chip technology.