• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.322-325
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• 2003

BST thin films were etched with inductively coupled plasmas. A chemically assisted physical etch of BST was experimentally confirmed by ICP under various gas mixtures. After a 20 % addition of $BCl_3$ to the $Cl_2/Ar$ mixture, resulting in an increased the chemical effect. As a increases of RF power, substrate power, and substrate temperature, and decrease of working pressure, the ion energy flux and chlorine atoms density increased. The maximum etch rate of the BST thin films was 90.1 nm/min at the RF power, substrate power, working pressure, and substrate temperature were 700 W, 300 W, 1.6 Pa, and 20 $^{\circ}C$, respectively. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching product.

• Transactions on Electrical and Electronic Materials
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• v.13 no.3
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• pp.144-148
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• 2012

In this work, we investigated to the etching characteristics of $TiO_2$ thin film and the selectivity using the inductively coupled plasma system. The etch rate and the selectivity were obtained with various gas mixing ratios. The maximum etch rate of $TiO_2$ thin film was 61.6 nm/min. The selectivity of $TiO_2$ to TiN, and $TiO_2$ to $SiO_2$ were obtained as 2.13 and 1.39, respectively. The etching process conditions are 400 W for RF power, -150 V for DC-bias voltage, 2 Pa for the process pressure, and $40^{\circ}C$ for substrate temperature. The chemical states of the etched surfaces were investigated with X-ray photoelectron spectroscopy (XPS). Its analysis showed that the etching mechanism was based on the physical and chemical pathways in the ion-assisted physical reaction.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.37-43
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• 2001

Polyvinylidenefluoride and Polytetrafluoroethylene have been irradiated by 1 keV Ar+ ion beam in an $O_2$ environment. Hydrophilic functional groups (such as -(C-O)-,-(C=O)-,-(C=O)-O- and so on) were formed on fluoropolymers. Contact angles of water to PVDF were reduced from $75^{\circ}$ to $31^{\circ}$. Re-increase of contact angle was originated from carbonization phase in case of high dose irradiation above $1{\times}10^{16} Ar^+cm^2$. Contact angles to PTFE decreased at low dose irradiation and were exaggerated to about $140^{\circ}$ due to cone type surface at high dose irradiation. Hydrophilic functional groups have played an important role on adhesion between metal and fluoropolymers by acid-base interaction and chemical bond formation. Adhesion of Pt/PVDF was enhanced by acid-base interaction because Pt is inert metal. Chemical bond formation between Cu and PTFE could enlarge the adhesion strength of Cu/PTFE.

• Journal of the Korean Chemical Society
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• v.28 no.6
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• pp.384-392
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• 1984

Reaction of the Fe(II) complex of a fully saturated tetradentate macrocyclic ligand [Fe([14]aneN$_4)(CH_3CN)_2]^{2+}$, where [14]ane$N_4$ represents 1,4,8,11-tetraazacyclotetradecane, with $O_2$ has been investigated in acetonitrile solutions. [Fe([14]aneN$_4)(CH_3CN)_2]^{2+}$ reacts with oxygen to yield low spin Fe(III) species, [Fe([14]aneN$_4)(CH_3CN)_2]^{3+}$, which undergoes metal ion assisted oxidative dehydrogenation of the macrocyclic ligand to produce low spin Fe(II) complex, [Fe([14]tetraeneN$_4)(CH_3CN)_2]^{2+}$. The macrocyclic ligand in [Fe([14]tetraeneN$_4)(CH_3CN)_2]^{2+}$ is highly unsaturated and its double bonds are conjugated. [Fe([14]dieneN$_4)(CH_3CN)_2]^{2+}$ and [Fe([14]dieneN$_4)(CH_3CN)_2]^{3+}$ are isolated as the intermediates of the reaction. The Fe(II) complexes involved in this oxidative dehydrogenation reaction react with carbon monoxide to give respective carbon monoxide derivatives, [FeL$(CH_3CN)(CO)]^{2+}$ (where L = macrocyclic ligand). The values of $v_{CO}$ of [FeL$(CH_3CN)(CO)]^{2+}$, and the electrochemical oxidation potentials of Fe(II) ${\to}$ Fe(III) and the qualitative stability toward air-oxidation for [FeL(CH$_3CN_2)^{2+}$ increase as the degree of unsaturation of the macrocyclic ligands increase.

• Journal of Microbiology and Biotechnology
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• v.26 no.10
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• pp.1781-1789
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• 2016

Glargine insulin is a long-acting insulin analog that helps blood glucose maintenance in patients with diabetes. We constructed the pPT-GI vector to express prepeptide glargine insulin when transformed into Escherichia coli JM109. The transformed E. coli cells were cultured by fed-batch fermentation. The final dry cell mass was 18 g/l. The prepeptide glargine insulin was 38.52% of the total protein. It was expressed as an inclusion body and then refolded to recover the biological activity. To convert the prepeptide into glargine insulin, citraconylation and trypsin cleavage were performed. Using citraconylation, the yield of enzymatic conversion for glargine insulin increased by 3.2-fold compared with that without citraconylation. After the enzyme reaction, active glargine insulin was purified by two types of chromatography (ion-exchange chromatography and reverse-phase chromatography). We obtained recombinant human glargine insulin at 98.11% purity and verified that it is equal to the standard of human glargine insulin, based on High-performance liquid chromatography analysis and Matrix-assisted laser desorption/ionization Time-of-Flight Mass Spectrometry. We thus established a production process for high-purity recombinant human glargine insulin and a method to block Arg (B31)-insulin formation. This established process for recombinant human glargine insulin may be a model process for the production of other human insulin analogs.

• Journal of the Korean institute of surface engineering
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• v.41 no.6
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• pp.269-273
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• 2008

The etch of $(Na_{0.5}K_{0.5})NbO_3$ (NKN) thin film was performed in $BCl_3/Cl_2/Ar$ inductively coupled plasma. It was found that the 1sccm addition $BCl_3$ (5%) into $Cl_2/Ar$ plasma caused a non-monotonic behavior of the NKN etch rate. The maximum etch rate of NKN was 95.3 nm/min at $BCl_3$ (1 sccm)/$Cl_2$ (16 sccm)/Ar (4 sccm), 800 W ICP power, 1 Pa pressure and 400 W bias power. The NKN etch rate shows a monotonic behavior a s the bias power increases. The analysis of the narrow scan spectra of XPS for both a s-deposited and etched NKN films allowed one to assume ion assisted etch mechanism. The most probable reason for the maximum etch rate can be defined as a concurrence of chemical and physical etch pathways.

• Applied Chemistry for Engineering
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• v.17 no.6
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• pp.586-590
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• 2006

As one of electro active polymers for soft smart materials, the ionic polymer metal composites (IPMC) are easy to produce through chemical reduction processing and show high displacements at low voltage. When the IPMC actuates, the deformation depends on a few factors including the structure of based membrane, species and morphology of the metal electrodes, the nature of cations and the level of hydration. As previously published, we have been studying on improvement of actuation through surface electrode modification of IPMC to grasp the effect of electrode morphology on actuation. This study is comparative experiments through the chemical reaction and deposition by ion beam assisted deposition (IBAD) in order to prepare the very thin and homogeneous surface electrode of IPMC. The IPMCs were prepared with different surface roughness of polymer membrane, and the influence of the surface roughness on the actuation was studied. By investigating the electrical properties and driving displacement, the actuating properties of IPMC with different surface roughness were studied.

• Journal of Environmental Health Sciences
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• v.30 no.2
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• pp.92-97
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• 2004

Three methods for VOCs emissions control in indoor air are reduction at the source, ventilation between indoor and outdoor, and removal. The best alternative should be to replace highly emitting sources with sources having low emissions, but the pertinent information on VOCs is not always available from manufactures. Other ways of improving indoor air quality are needed. It is to increase the outside fresh-air flow to dilute the pollutants, but this method would generally provide only a dilution effect without destruction in residence. An ideal alternative to existing technologies would be a chemical oxidation process able to treat large volumes of slightly contaminated air at normal temperature without additional oxidant such as ozone generator and ion generator. Photocatalytic oxidation(PCO) represents such a process. It is characterized by a surface reaction assisted by light radiation inducing the formation of superoxide, hydroperoxide anions, or hydroxyl radicals, which are powerful oxidants. In comparison with other VOCs removal methods, PCO offers several advantages. The purpose of this study was to explore the possibilities for photocatalytic purification of slightly contaminated indoor air by using visible light such as flurescent visible light(FVL). In this study, a PCO of relatively concentrated benzene using common FVL lamps was investigated as batch type and total volatile organic compounds(TVOCs) using a common FVL lamp and penetrated sun light over window. The results of this study shown the possibility of TiO$_2$ photocatalyst application in the area of indoor air quality control.

• Journal of the Microelectronics and Packaging Society
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• v.4 no.1
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• pp.19-30
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• 1997

고분자 Polyimide (PI) film 표면을 반응성 가스 분위기에서 1KeV의 에너지를 가지 는 여러 종류의 이온빔으로 조사하여 표면을 개질하였다. PI표면의 친수성과 표면에너지를 측정하기 위해 접촉각 측정기를 사용하였으며 개질 된 표면의 화학적 변화를 측정하기 위해 X-ray photoelectron spectroscopy (XPS)를 사용하였다. 표면 개질을 위한 이온조사량은 5 $\times$1014 -1$\times$1017 ions/cm2이며 반응가스는 0-8scm까지 변화시켰다. 아르곤 이온빔으로 표면 개질시에는 67。에서 40。까지 감소하였고 표면에너지는 46 dyne/cm에서 64dyne/cm까지 증가하였다. 산소를 6sccm 주입하면서 산소 이온빔으로 표면 개질시 물과의 접촉각은 67。 에서 최대 12。까지 감소하였으며 표면에너지는 46dyne/cm에서 72dyne/cm까지 증가하였고 이때의 이온조사량은 5$\times$1014 -1$\times$1017 ions/cm2 이였다. 여러 종류의 반응성 가스와 이온을 사용하여 개질하여 본 결과 산소분위기에서 산소 이온을 이용하여 개질 하였을 때 접촉각이 8。인 표면을 얻을수 있었다, 산소분위기에서 아르곤 이온빔으로 1$\times$1017 ions/cm2 의 이온 조사량으로 개질 된 Pi 시료를 대기 중에 보관하였을 때에는 110시간 후 65。로 증가하였고 물속에서 보관하였을 때에는 46。로 증가하였다. 그러나 산소 이온빔에 산소분위기에서 개 질 된 시료의 경우 물속에 보관할 경우 접촉강의 증가없이 일정한 값을 나타내었다. 이온조 사로 개질된 시료의 화학적 변화를 확인하기 위하여 XPS 사용하였다. 표면 개질 전의 PI 시료와 산소 분위기에서 1$\times$1017 ions/cm2의 아르곤 이온빔으로 개질한 XPS peak 결과로 보아 Cls의 spectra를 보면 C-C, C-N 그리고 C=O의 결합들은 intensity가 감소하였고 C-O 의 intensity는 증가하였다. Nls peak로 보아 imide N 성분은 이온빔의 조사로 인하여 감소 하였고 C-O의 intensity는 증가하였다. Nls peakk로 보아 imide N성분은 이온빔의조사로 감소하였고 Ols peak로 보아 C-O는 증가하였고 C=O는 약간의 감소가 나타났다. 또한 이온 보조 반응법을 이용하여 처리한 시료의 경우 접착력이 증가하는데 이는 주로 C-O 결합의 산소와 Cu와의 상호작요에 의한 것임을 알수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.164-165
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• 2005

The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled $BCl_3$-based plasmas(ICP) with additions of $SF_6$ or $CF_4$ were studied. The additions of flourine gases provided enhanced etch selectivities of GaAs/AlGaAs and GaAs/InGaP. The etch stop reaction involving formation of involatile $AlF_3$ and $InF_3$ (boiling points of etch products: $AlF_3\sim1300^{\circ}C$, $InF_3$ > $1200^{\circ}C$ at atmosphere) were found to be effective under high density inductively coupled plasma condition. Decrease of etch rates of all materials was probably due to strong increase of flourine atoms in the discharge, which blocked the surface of the material against chlorine neutral adsorption. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and variable gas composition. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching.