Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
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- Pages.164-165
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- 2005
F Ion-Assisted Effect on Dry Etching of GaAs over AlGaAs and InGaP
GaAs/AlGaAs와 GaAs/InGaP의 건식 식각 시 Flourine 이온의 효과
- Jang, Soo-Ouk (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
- Park, Min-Young (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
- Choi, Chung-Ki (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
- Yoo, Seung-Ryul (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
- Lee, Je-Won (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
- Song, Han-Jung (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
- Jeon, Min-Hyon (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.)
- 장수욱 (인제대학교 나노공학부/나노기술 응용센터) ;
- 박민영 (인제대학교 나노공학부/나노기술 응용센터) ;
- 최충기 (인제대학교 나노공학부/나노기술 응용센터) ;
- 유승열 (인제대학교 나노공학부/나노기술 응용센터) ;
- 이제원 (인제대학교 나노공학부/나노기술 응용센터) ;
- 승한정 (인제대학교 나노공학부/나노기술 응용센터) ;
- 전민현 (인제대학교 나노공학부/나노기술 응용센터)
- Published : 2005.07.07
Abstract
The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled