• Title/Summary/Keyword: intermetallic

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Interfacial Reaction and Mechanical Property of BGA Solder Joints with LTCC Substrate (LTCC기판과 BGA 솔더접합부의 계면반응 및 기계적 특성)

  • Yoo, Choong-Sik;Ha, Sang-Su;Kim, Bae-Kyun;Jang, Jin-Kyu;Seo, Won-Chan;Jung, Seung-Boo
    • Korean Journal of Metals and Materials
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    • v.47 no.3
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    • pp.202-208
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    • 2009
  • The effects of aging time on the microstructure and shear strength of the Low Temperature Co-fired Ceramic (LTCC)/Ag pad/Electroless Nickel Immersion Gold (ENIG)/BGA solder joints were investigated through isothermal aging at $150^{\circ}C$ for 1000 h with conventional Sn-37Pb and Sn-3Ag-0.5Cu. $Ni_3Sn_4$ intermetallic compound (IMC) layers was formed at the interface between Sn-37Pb solder and LTCC substrate as-reflowed state, while $(Ni,Cu)_3Sn_4$ IMC layer was formed between Sn-3Ag-0.5Cu solder and LTCC substrate. Additional $(Cu,Ni)_6Sn_5$ layer was found at the interface between the $(Ni,Cu)_3Sn_4$ layer and Sn-3Ag-0.5Cu solder after aging at $150^{\circ}C$ for 500 h. Thickness of the IMC layers increased and coarsened with increasing aging time. Shear strength of both solder joints increased with increasing aging time. Failure mode of BGA solder joints with LTCC substrate after shear testing revealed that shear strength of the joints depended on the adhesion between Ag metallization and LTCC. Fracture mechanism of Sn-37Pb solder joint was a mixture of ductile and pad lift, while that of Sn-3Ag-0.5Cu solder joint was a mixture of ductile and brittle $(Ni,Cu)_3Sn_4$ IMC fracture morphology. Failure mechanisms of LTCC/Ag pad/ENIG/BGA solder joints were also interpreted by finite element analyses.

High Temperature Precipitation Behavior of High-Nitrogen Duplex Stainless Steel (고질소 2상 스테인리스강의 고온 석출거동)

  • Bae, Jong-In;Kim, Sung-Tae;Lee, Tae-Ho;Ha, Heon-Young;Kim, Sung-Joon;Park, Yong-Ho
    • Korean Journal of Metals and Materials
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    • v.49 no.2
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    • pp.93-103
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    • 2011
  • Precipitation behavior of high-nitrogen duplex Fe-24Cr-7Mn-4Ni-4Mo-0.43N stainless steel aged at $850^{\circ}C$ was investigated using scanning transmission electron microscopy. Based on the analyses of selected area diffraction patterns, four kinds of precipitates (intermetallic sigma (${\sigma}$) and chi (${\chi}$), $Cr_2N$ and secondary austenite) were identified. At the ferrite/austenite phase boundary, the ${\sigma}$ phase and secondary austenite were formed via ${\alpha}{\rightarrow}{\gamma}+{\sigma}$ eutectoid reaction. The precipitation of $Cr_2N$ occurred at the austenite grain boundary as well as the interior of the ferrite. The intermetallic ${\chi}$ phase also formed within the ferrite and showed a cube-cube orientation relationship with the ferrite. Further aging produced a lamellar structure composed of $Cr_2N$ and austenite along the ferrite/austenite boundary and enhanced the precipitation of the ${\chi}$ phase. The crystallographic features of the precipitates were also examined in terms of the orientation relationship with the austenite or ferrite matrix.

Study on the Interfacial Reactions between Gallium and Cu/Au Multi-layer Metallization (갈륨과 Cu/Au 금속층과의 계면반응 연구)

  • Bae, Junhyuk;Sohn, Yoonchul
    • Journal of the Microelectronics and Packaging Society
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    • v.29 no.2
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    • pp.73-79
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    • 2022
  • In this study, a reaction study between Ga, which has recently been spotlighted as a low-temperature bonding material, and Cu, a representative electrode material, was conducted to investigate information necessary for low-temperature soldering applications. Interfacial reaction and intermetallic compound (IMC) growth were observed and analyzed by reacting Ga and Cu/Au substrates in the temperature range of 80-200℃. The main IMC growing at the reaction interface was CuGa2 phase, and AuGa2 IMC with small particle sizes was formed on the upper part and Cu9Ga4 IMC with a thin band shape on the lower part of the CuGa2 layer. CuGa2 particles showed a scallop shape, and the particle size increased without significant shape change as the reaction time increased, similar to the case of Cu6Sn5 growth. As a result of analyzing the CuGa2 growth mechanism, the time exponent was calculated to be ~3.0 in the temperature range of 120-200℃, and the activation energy was measured to be 17.7 kJ/mol.

Recent Advances in Fine Pitch Cu Pillar Bumps for Advanced Semiconductor Packaging (첨단 반도체 패키징을 위한 미세 피치 Cu Pillar Bump 연구 동향)

  • Eun-Chae Noh;Hyo-Won Lee;Jeong-Won Yoon
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.3
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    • pp.1-10
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    • 2023
  • Recently, as the demand for high-performance computers and mobile products increases, semiconductor packages are becoming high-integration and high-density. Therefore, in order to transmit a large amount of data at once, micro bumps such as flip-chip and Cu pillar that can reduce bump size and pitch and increase I/O density are used. However, when the size of the bumps is smaller than 70 ㎛, the brittleness increases and electrical properties decrease due to the rapid increase of the IMC volume fraction in the solder joint, which deteriorates the reliability of the solder joint. Therefore, in order to improve these issues, a layer that serves to prevent diffusion is inserted between the UBM (Under Bump Metallization) or pillar and the solder cap. In this review paper, various studies to improve bonding properties by suppressing excessive IMC growth of micro-bumps through additional layer insertion were compared and analyzed.

Fabrication and characteristics of NbTi superconducting wires with Cu-Si matrix for AC use (Cu-Si 기지금속을 사용한 교류용 초전도선재 제조 및 특성)

  • Ha, D.W.;Oh, S.S.;Oh, B.H.;Kwon, Y.G.;Cho, J.W.;Ryu, K.S.;Han, I.Y.;Baik, H.K.
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1165-1167
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    • 1995
  • The Cu-Si alloy has been proposed as a new matrix materal for filamentary Nb-Ti wires in AC use. The Cu-Si alloy shows approprite mechanical and electrical properties, and is economically more favourable than the Cu-Ni alloy matrix used currently. Moreover, the addition of Si to Cu prevents the formation of intermetallic compounds around the filaments. After we investigated resistivity and hardness of Cu-Si alloy as matrix materal, investigated CuSi/NbTi interface reactions and superconductivities of superconducting wires that were made by various heat treatment.

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High-temperature Semiconductor Bonding using Backside Metallization with Ag/Sn/Ag Sandwich Structure (Ag/Sn/Ag 샌드위치 구조를 갖는 Backside Metallization을 이용한 고온 반도체 접합 기술)

  • Choi, Jinseok;An, Sung Jin
    • Journal of the Microelectronics and Packaging Society
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    • v.27 no.1
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    • pp.1-7
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    • 2020
  • The backside metallization process is typically used to attach a chip to a lead frame for semiconductor packaging because it has excellent bond-line and good electrical and thermal conduction. In particular, the backside metal with the Ag/Sn/Ag sandwich structure has a low-temperature bonding process and high remelting temperature because the interfacial structure composed of intermetallic compounds with higher melting temperatures than pure metal layers after die attach process. Here, we introduce a die attach process with the Ag/Sn/Ag sandwich structure to apply commercial semiconductor packages. After the die attachment, we investigated the evolution of the interfacial structures and evaluated the shear strength of the Ag/Sn/Ag sandwich structure and compared to those of a commercial backside metal (Au-12Ge).

A Study on the Diffusion Bonding of Mg-Ni under Low Eutectic Temperature (최소 공정온도하에서 Mg-Ni의 열확산 접합에 관한 연구)

  • Jin, Yeung Jun
    • Journal of the Korean Society of Safety
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    • v.32 no.1
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    • pp.9-14
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    • 2017
  • Diffusion bonding is a technique that has the ability to join materials with minimum change in joint micro-structure and deformation of the component. The quality of the joints produced was examined by metallurgical characterization and the joint micro-structure developed across the diffusion bonding was related to changes in mechanical properties as a function of the bonding time. An increase in bonding time also resulted in an increase in the micro-hardness of the joint interface from 55 VHN to 180 VHN, The increase in hardness was attributed to the formation of intermetallic compounds which increased in concentration as bonding time increased.

Molecular Dynamics Simulation of Nano-Deformation Behavior of the Grain-Size Controlled Rheology Material (분자동력학을 이용한 결정립 제어 레오로지 소재의 나노 변형거동 전산모사)

  • Kim J. W.;Youn S. W.;Kang C. G.
    • Transactions of Materials Processing
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    • v.14 no.4 s.76
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    • pp.319-326
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    • 2005
  • In this study, the nano-deformation behavior of semi-solid Al-Si alloy was investigated using a molecular dynamics simulation as a part of the research on the surface crack behavior in thixoformed automobile parts. The microstructure of the grain-size controlled Al-Si alloy consists of primary and eutectic regions. In eutectic regions the crack initiation begins with initial fracture of the eutectic silicon particles and inside other intermetallic phases. Nano-deformation characteristics in the eutectic and primary phase of the grain-size controlled Al-Si alloy were investigated through the molecular dynamics simulation. The primary phase was assumed to be single crystal aluminum. It was shown that the vacancy occurred at the zone where silicon molecules were.

Microstructure and Hardness of Al-Cu Alloy Coating on Monel 400 by Hot Dipping (액상 침적에 의한 Monel 400기지상에 형성된 Al-Cu 합금 코팅층의 조직 및 경도)

  • 조선욱;이임렬
    • Journal of Surface Science and Engineering
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    • v.29 no.4
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    • pp.278-285
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    • 1996
  • The structure of coating layer formed by hot dip Al-Cu alloy coating on Monel 1400 metal was studied. The coating layer consists of alloyed layer adjacent to the Monel 400 substrate and Al-Cu alloy. It was found that the hardness of coating increased with dipping time and heat treatment associated with the diffusion and the formation of intermetallic compound at the interface. However the thickness of coating layer was decreased at high dipping temperature due to tile higher viscosity of liquid coating alloy. Diffusion heat treatment at $600^{\circ}C$ after coating resulted in the disappearence of adhered Al(Cu) and $CuAl_2$ phases, and then they transformed into the new phases of CuAl and Al7Cu4Ni at coating layer.

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