• Journal of Adhesion and Interface
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• v.11 no.4
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• pp.174-180
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• 2010

The effect of carbon nanotube surface treatment on the interface and thermal conductivity of carbon nanotube-based poly(methylmethacrylate) (PMMA) composites was investigated. Coagulation and atomic-transfer radical polymerization (ATRP) was applied to modify the surface of multi-wall carbon nano-tube. The composite of ATRP method used carbon nanotube showed the higher transparency and thermal conductivities than that of the coagulation method used. In comparison to the thermal conductivity of pure PMMA, 0.21 W/mK, the ATRP carbon nanotube used PMMA/MWNT composite showed a thermal conductivity of 0.38 W/mK. The interface between carbon nanotube and PMMA was observed by scanning electron microscope and uniform dispersion of carbon nanotube was observed without any void in the PMMA matrix. It may be beneficial to transport the phonon without any scattering and it may result in a higher thermal conductivity.

• Journal of Welding and Joining
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• v.20 no.4
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• pp.498-504
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• 2002

Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.450-456
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• 2005

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and Surface Roughness Tester. Adhesion was obtained from T-peel tests of semiconductive layer haying different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the creation of O-H and C=O. It is observed that adhesion performance was determined by surface energy and roughness level of silicone surface. It is found that at dielectric strength was increased with improving the adhesion between the semiconductive and insulating interface.

• Journal of Technologic Dentistry
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• v.33 no.1
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• pp.47-54
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• 2011

Purpose: To investigate shear bonding strength between dental zirconia ceramics with different surface treatment and metal bracket. Methods: Zirconia ceramics(LAVA, 3M ESPE, USA) were divided to 4 groups according to their surface treatment; no surface treatment(G1), sand blasting(G2), silane coating(G3), and sand blasting+silane coating(G4). Specimens were bonded to metal bracket using resin bond($Transbond^{TM}XT$, 3M Unitek, USA). Shear bond strength was measured using universal test machine(3366 INSTRON. U.S.A) with cross head speed of 1 mm/min. Microstructural investigation for fracture surface was performed after shear test. Results: Shear bonding strengths of single surface treatment groups (G2 and G3) were higher than no treatment group(G1). Combined Treatment Group (G4) showed the highest shear bond strength of 9.15MPa. Microstructural observation shows that higher shear bonding strength was obtained when debonding was occurred at metal bracket/resin interface rather than zirconia ceramic/resin interface. Conclusion: Surface treatment of zirconia is necessary to obtain higher bonding strength. Combined treatment can be more effective when surface the surfaces are kept clean and homogeneous.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.230-230
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• 2013

In amorphous or microcrystalline thin-film silicon solar cells, p-i-n structure is used instead of p/n junction structure as in wafer-based Si solar cells. Hence, these p-i-n structured solar cells inevitably consist of many interfaces and the cell efficiency critically depends on the effective control of these interfaces. In this study, in-situ plasma treatment process of the interfaces was developed to improve the efficiency of a-Si:H solar cell. The p-i-n cell was deposited using a single-chamber VHF-PECVD system, which was driven by a pulsed-RF generator at 80 MHz. In order to solve the cross-contamination problem of p-i layer, high RF power was applied without supplying SiH4 gas after p-layer deposition, which effectively cleaned B contamination inside chamber wall from p-layer deposition. In addition to the p-i interface control, various interface control techniques such as thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, multiple applications of thin i-layer deposition and H2 plasma treatment, H2 plasma treatment of i-layer prior to n-layer deposition, etc. were developed. In order to reduce the reflection at the air-glass interface, anti-reflective SiO2 coating was also adopted. The initial solar cell efficiency over 11% could be achieved for test cell area of 0.2 $cm^2$.

• Journal of the Korean Society for Heat Treatment
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• v.5 no.4
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• pp.209-214
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• 1992

A Study on the Interface Behavior of Aluminium Alloy Matrix Composites Reinforced with W Fiber. In this study the tungsten fiber reinforced 7072 aluminium alloy martrixcomposites were fabricated using vacuum hot press. The fiber has been aligned on the aluminium alloy sheets and these sheets were bonded with diffustion at 873K and 49Mpa. The behaviors of interface layer and mechanical properites have been investigated as a function of holding time at 873K. Several compounds were formed at the interface layer. These compounds were growing in propotion to holding time. XRD analysis showed that these compounds were $WAl_{12}$ $WAl_5$. The tensile strength decreased as the heat treatment time over 10hr gradually. The ductle fractur mode was turned to brittle mode after heat treatment.

• Earthquakes and Structures
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• v.25 no.2
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• pp.89-97
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• 2023

In order to obtain the impact of socket connection interface forms and socket gap sizes on the seismic performance of reinforced concrete (RC) socket prefabricated bridge piers, quasi-static tests for three socket prefabricated piers with different column-foundation connection interface forms and reserved socket gap sizes, as well as to the corresponding cast-in-situ reinforced concrete piers, were carried out. The influence of socket connection structure on various seismic performance indexes of socket prefabricated piers was studied by comparing and analyzing the hysteresis curve and skeleton curve obtained through the experiment. Results showed that the ultimate failure mode of the socket prefabricated pier with circumferential corrugated treatment at the connection interface was the closest to that of the monolithic pier, the maximum bearing capacity was slightly less than that of the cast-in-situ pier but larger than that of the socket pier with roughened connection interface, and the displacement ductility and accumulated energy consumption capacity were smaller than those of socket piers with roughened connection interface. The connection interface treatment form had less influence on the residual deformation of socket prefabricated bridge piers. With the increase in the reserved socket gap size between the precast pier column and the precast foundation, the bearing capacity of the prefabricated socket bridge pier component, as well as the ductility and residual displacement of the component, would be reduced and had unfavorable effect on the energy dissipation property of the bridge pier component.

• Interaction and multiscale mechanics
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• v.1 no.2
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• pp.251-278
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• 2008

In this study, we investigate the discontinuous-derivative treatment at the gas-liquid interface in underwater explosion (UNDEX) problems by using the Moving Least Squares-Smoothed Particle Hydrodynamics (MLS-SPH) method, which is known as one of the particle methods suitable for problems where large deformation and inhomogeneity occur in the whole domain. Because the numerical oscillation of pressure arises from derivative discontinuity in the UNDEX analysis using the standard SPH method, the MLS shape function with Discontinuous-derivative Basis Function (DBF) that is able to represent the derivative discontinuity of field function is utilized in the MLS-SPH formulation in order to suppress the nonphysical pressure oscillation. The effectiveness of the MLS-SPH with DBF is demonstrated in comparison with the standard SPH and conventional MLS-SPH though a shock tube problem and benchmark standard problems of UNDEX of a trinitrotoluene (TNT) charge.

• 한국전산유체공학회:학술대회논문집
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• 2011.05a
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• pp.54-57
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• 2011

In this paper we present an algorithm about how to simulate two dimensional dam breaking with lattice Boltzmann method (LBM). LBM considers a typical volume element of fluid to be composed of a collection of particles that represented by a particle velocity distribution function for each fluid component at each grid point. We use the modified Lattice Boltzmann Method for incompressible fluid. This paper will represent detailed information on single phase flow which considers only the water instead of both air and water. Interface treatment and conservation of mass are the most important things in simulating free surface where the Interface is treated by mass exchange with the water region. We consider the surface tension on the interface and also bounce back boundary condition for the treatment of solid obstacles. We will compare the results of the simulation with some methods and experimental results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.373-377
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• 2004

We have investigated the electrical characterization of metal-oxide-semiconductor (MOS) capacitors formed on the inductively coupled plasma (ICP) etch-damaged both n- and p-type 4H-SiC. We found that there was an effect of a sacrificial oxidation treatment on the etch-damaged surfaces. Current-voltage and capacitance-voltage measurements of these MOS capacitors were used and referenced to those of prepared control samples without etch damage. It has been found that a sacrificial oxidation treatment can improve the electrical characteristics of MOS capacitors on etch-damaged 4H-SiC since the effective interface density and fixed oxide charges of etch-damaged samples have been found to increase while the breakdown field strength of the oxide decreased and the barrier height at the SiC-SiO$_2$ interface decreased for MOS capacitors on etch-damaged surfaces.