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http://dx.doi.org/10.4313/JKEM.2005.18.5.450

Adhesion and Electrical Performance by Plasma Treatment of Semiconductive Silicone Rubber  

Hwang, Sun-Mook (인하대학교 전기공학과)
Lee, Ki-Taek (인하대학교 전기공학과)
Hong, Joo-Il (인하대학교 전기공학과)
Huh, Chang-Su (인하대학교 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.5, 2005 , pp. 450-456 More about this Journal
Abstract
In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and Surface Roughness Tester. Adhesion was obtained from T-peel tests of semiconductive layer haying different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the creation of O-H and C=O. It is observed that adhesion performance was determined by surface energy and roughness level of silicone surface. It is found that at dielectric strength was increased with improving the adhesion between the semiconductive and insulating interface.
Keywords
Silicone rubber; Plasma surface modification; Adhesion; Surface energy;
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