• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.35-35
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• 2009

Capacitorless one transistor dynamic random access memory (1T-DRAM) cells were fabricated on the fully depleted strained-silicon-on-insulator (FD sSOI) and the effects of silicon back interface state on buried oxide (BOX) layer on the memory properties were evaluated. As a result, the fabricated 1T-DRAM cells showed superior electrical characteristics and a large sensing current margin (${\Delta}I_s$) between "1" state and "0" state. The back interface of SOI based capacitorless 1T-DRAM memory cell plays an important role on the memory performance. As the back interface properties were degraded by increase rapid thermal annealing (RTA) process, the performance of 1T-DRAM was also degraded. On the other hand, the properties of back interface and the performance of 1T-DRAM were considerably improved by post RTA annealing process at $450^{\circ}C$ for 30 min in a 2% $H_2/N_2$ ambient.

• Nuclear Engineering and Technology
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• v.52 no.6
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• pp.1172-1179
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• 2020

As a Lagrangian particle method, Moving Particle Semi-implicit (MPS) method has great capability to capture interface/surface. In recent years, the multiphase flow simulation using MPS method has become one of the important directions of its developments. In this study, some key methods for multiphase flow have been introduced. The interface tension model in multiphase flow is modified to maintain the smooth of the interface and suitable for the three-phase flow. The mass transfer at immiscible liquid interface entrained by single bubble which could occur in Molten Core-Concrete Interaction (MCCI) has been investigated using this particle method. With the increase of bubble size, the height of entrainment column also increases, but the time of film rupture is slightly different. With the increase of density ratio between the two liquids, the height of entrained column decreases significantly due to the decreasing buoyancy of the denser liquid in the lighter liquid. In addition, the larger the interface tension coefficient is, the more rapidly the entrained denser liquid falls. This study validates that the MPS method has shown great performance for multiphase flow simulation. Besides, the influence of physical parameters on the mass transfer at immiscible interface has also been investigated in this study.

• Journal of Advanced Research in Ocean Engineering
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• v.1 no.1
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• pp.36-43
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• 2015

Since the crack generation and its propagation caused by welding defects is one of the main hull damage patterns, the simulation of crack propagation process has an important significance for ship safety. Based on interface element method, a finite element model to simulate crack propagation is studied in the paper. A Lennard-Jones type potential function is employed to define potential energy of the interface element. Tensile tests of steel flat plates with initial central crack are carried out. Surface energy density and spring critical stress that are suitable for the simulation of crack propagation are determined by comparing numerical calculation and tests results. Based on a large number of simulation results, the curve of simulation correction parameter plotted against the crack length is calculated.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.189-192
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• 1988

Nitrided oxides have been investigated recently for application as a replacement for thermally grown $SiO_2$ in MIS devices. In this paper, thin oxides were nitrided in $N_2$ Plasma ambient. With the measurement of the equivalent paralled conductance and capacitance by the using coductance technique, the characterization of Si-SiON interface is developed. The interface state density of Si-SiON is obtained by $1{\times}10^{11}{\sim}9{\times}10^{11}(eV^{-1}Cm^{-2})$. After${\pm}$B-T stress is performed on the sample, the interface state density gets increased.

• Journal of Institute of Control, Robotics and Systems
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• v.13 no.8
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• pp.735-742
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• 2007

The importance of the interaction capability of a robot increases as the application of a robot is extended to a human's daily life. In this paper, a portable mediate interface Handybot is developed with various interaction channels to be used with an intelligent home service robot. The Handybot has a task-oriented channel of an icon language as well as a verbal interface. It also has an emotional interaction channel that recognizes a user's emotional state from facial expression and speech, transmits that state to the robot, and expresses the robot's emotional state to the user. It is expected that the Handybot will reduce spatial problems that may exist in human-robot interactions, propose a new interaction method, and help creating rich and continuous interactions between human users and robots.

• Journal of Welding and Joining
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• v.15 no.6
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• pp.32-40
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• 1997

Solid state diffusion bonding is the joining process performed by creep and diffusion, which is accelerated by heating below melting temperature and proper pressing, in vacuum or shielding gas atmosphere. By this process we can obtain sufficient joint which can't be expected from the fusion welding. For Ti-6Al-4V alloy, the optimum solid state diffusion bonding condition and mechanical properties of the joint were found, and micro void morphology at bond interface was observed by SEM. The results of tensile test showed sufficient joint, whose mechanical properties are similar to that of base metal. 850$^{\circ}$C, 3MPa is considered as the optimum bonding condition. Void morphology at interface is long and flat at the initial stage. As the percentage of bonded area increases, however, small and round voids are found. Variation of void shape can be explained as follows. As for the void shrinkage mechanism, at the initial stage, power law creep is the dominant, but diffusion mechanism is dominant when the percentage of bonded area is increased.

• Korean Journal of Materials Research
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• v.28 no.2
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• pp.118-123
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• 2018

5 nm-thick $SiO_2$ layers formed by plasma-enhanced chemical vapor deposition (PECVD) are densified to improve the electrical and interface properties by using nitric acid oxidation of Si (NAOS) method at a low temperature of $121^{\circ}C$. The physical and electrical properties are clearly investigated according to NAOS times and post-metallization annealing (PMA) at $250^{\circ}C$ for 10 min in 5 vol% hydrogen atmosphere. The leakage current density is significantly decreased about three orders of magnitude from $3.110{\times}10^{-5}A/cm^2$ after NAOS 5 hours with PMA treatment, although the $SiO_2$ layers are not changed. These dramatically decreases of leakage current density are resulted from improvement of the interface properties. Concentration of suboxide species ($Si^{1+}$, $Si^{2+}$ and $Si^{3+}$) in $SiO_x$ transition layers as well as the interface state density ($D_{it}$) in $SiO_2/Si$ interface region are critically decreased about 1/3 and one order of magnitude, respectively. The decrease in leakage current density is attributed to improvement of interface properties though chemical method of NAOS with PMA treatment which can perform the oxidation and remove the OH species and dangling bond.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.82-85
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• 1992

In this study, charge pumping method was used to investigate the Si-SiO$_2$interface characteristics of the nonvolatile SNOSFET memory devices, fabricated using the CMOS 1 Mbit processes (1.2$\mu\textrm{m}$ design rule), with thin oxide layer of 30${\AA}$ thick and nitride layer of 525${\AA}$ thick on the n-type silicon substrate (p-channel). Charge pumping current characteristics with the pulse base level were measured for various frequencies, falling times and rising times. By means of the charge dynamics in a non-steady state, the average Si-SiO$_2$interface state density and capture cross section were determined to be 3.565${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ and 4.834${\times}$10$\^$-16/$\textrm{cm}^2$, respectively. However Si-SiO$_2$ interface state densities were disributed 2.8${\times}$10$\^$-11/～5.6${\times}$10$\^$11/cm$\^$-2/～6${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ in the lover half of energy gap.

• Journal of the Korean Geotechnical Society
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• v.16 no.3
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• pp.5-13
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• 2000

In this study, the Disturbed State Concept (DSC) constitutive model is calibrated and modified for steel-sand interface by using the HiS S model for relative intact (Rl) state and the critical state model for the fuBy adjusted (FA) part in the material. The general formulation for implementation is developed. Then, the DSC model with modification for interface is implemented in finite element program based on the generalized Biot's theory. The interface test under one-way monotonic and two-way cyclic loading were numerically simulated using the finite element program modified in this study. The DSC predictions show improved agreement with the observed results from laboratory test. Overall, the computer procedure with the DSC allows relatively improved simulation ofthe soil-structure interaction problems.oblems.

• Journal of the Korean Geotechnical Society
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• v.19 no.5
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• pp.223-232
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• 2003

In this study, a constitutive model called the disturbed state concept (DSC) was modified to be applied to the interface shear stress-displacement relationship between geosynthetics. The DSC model is comprised of two reference states, namely the relative intact (RI) and the fully adjusted (FA) state, and one function, namely the disturbance function. This model is a unified approach and can allow for various models as an RI state such as elastic-perfectly plastic model, hierarchical model, and so on. In addition, by using this model, the elastic and plastic displacements can be considered simultaneously. Comparisons between the measured data and predicted results through the parameters determined from four sets of large direct shear tests showed good agreements with each other, especially for the smooth geomembrane-involved interface. Although there are slight differences at peak shear strength for textured geomembrane-involved interface, this model can still be useful to predict the position of displacement at peak strength and the large displacement (or residual) shear strength.