• Title/Summary/Keyword: interface parameters

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Torque and mechanical failure of orthodontic micro-implant influenced by implant design parameters (교정용 마이크로 임플란트의 디자인이 토오크와 파절강도에 미치는 영향)

  • Yu, Won-Jae;Kyung, Hee-Moon
    • The korean journal of orthodontics
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    • v.37 no.3 s.122
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    • pp.171-181
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    • 2007
  • Objective: The present study was aimed at an analytical formulation of the micro-implant related torque as a function of implant size, i.e. the diameter and length, screw size, and the bony resistance at the implant to bone interface. Methods: The resistance at the implant to cancellous bone interface $(S_{can})$ was assumed to be in the range of 1.0-2.5 MPa. Micro-implant model of Absoanchor (Dentos Inc. Daegu, Korea) was used in the course of the analysis. Results: The results showed that the torque was a strong function of diameter, length, and the screw height. As the diameter increased and as the screw size decreased, the torque index decreased. However the strength index was a different function of the implant and bone factors. The whole Absoanchor implant models were within the safe region when the resistance at the implant/cancellous bone $(=S_{can})$ was 1.0 or less. Conclusion: For bone with $S_{can}$ of 1.5 MPa, the cervical diameter should be greater than 1.5 mm if micro-implant models of 12 mm long are to be placed. For $S_{can}$ of 2.0 MPa, micro-implant models of larger cervical diameter than 1.5 mm were found to be safe only if the endosseous length was less than 8 mm.

On-line Quality Assurance of Linear Accelerator with Electronic Portal Imaging System (전자포탈영상장치(EPID)를 이용한 선형가속기의 기하학적 QC/QA System)

  • Lee, Seok;Jang, Hye-Sook;Choi, Eun-Kyung;Kwon, Soo-Il;Lee, Byung-Yong
    • Progress in Medical Physics
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    • v.9 no.3
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    • pp.127-136
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    • 1998
  • On-line geometrical quality assurance system has been developed using electronic portal imaging system(OQuE). EPID system is networked into Pentium PC in order to transmit the acquisited images to analysis PC. Geometrical QA parameters, including light-radiation field congruence, collimator rotation axis, and gantry rotation axis can be easily analyzed with the help of graphic user interface(GUI) software. Equipped with the EPID (Portal Vision, Varian, USA), geometrical quality assurance of a linear accelerator (CL/2100/CD, Varian, USA), which is networked into OQuE, was performed to evaluate this system. Light-radiation field congruence tests by center of gravity analysis shows 0.2~0.3mm differences for various field sizes. Collimator (or Gantry) rotation axis for various angles could be obtained by superposing 4 shots of angles. The radius of collimator rotation axis is measured to 0.2mm for upper jaw collimator, and 0.1mm for lower jaw. Acquisited images for various gantry angles were rotated according to the gantry angle and actual center of image point obtained from collimator axis test. The rotated images are superpositioned and analyzed as the same method as collimator rotation axis. The radius of gantry rotation axis is calculated 0.3mm for anterior/posterior direction (gantry 0$^{\circ}$ and 170$^{\circ}$) and 0.7mm for right/left direction(gantry 90$^{\circ}$ and 260$^{\circ}$). Image acquisition for data analysis is faster than conventional method and the results turn out to be excellent for the development goal and accurate within a milimeter range. The OQuE system is proven to be a good tool for the geometrical quality assurance of linear accelerator using EPID.

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Determination of Adsorption Isotherms of Hydrogen at an Ir Electrode Interface Using the Phase-Shift Method and Correlation Constants (Ir 전극 계면에서 위상이동 방법 및 상관계수를 이용한 수소의 흡착동온식 결정)

  • Jeon, Sang-K.
    • Journal of the Korean Electrochemical Society
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    • v.10 no.2
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    • pp.132-140
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    • 2007
  • The phase-shift method and correlation constants for studying a linear relationship between the behavior ($-{\varphi}\;vs.\;E$) of the phase shift ($0^{\circ}{\leq}-{\varphi}{\leq}90^{\circ}$) for the optimum intermediate frequency and that (${\theta}\;vs.\;E$) of the fractional surface coverage ($1{\geq}\theta{\geq}0$) have been proposed and verified to determine the Langmuir, Frumkin, and Temkin adsorption isotherms (${\theta}\;vs.\;E$) at noble metal/aqueous electrolyte interfaces. At an Ir/0.1 M KOH aqueous electrolyte interface, the Langmuir and Temkin adsorption isotherms (${\theta}\;vs.\;E$), equilibrium constants ($K=3.3{\times}10^{-4}\;mol^{-1}$ for the Langmuir and $K=3.3{\times}10^{-3}{\exp}(-4.6{\theta})\;mol^{-1}$ for the Temkin adsorption isotherm), interaction parameter (g = 4.6 for the Temkin adsorption isotherm), and standard free energies (${\Delta}G_{ads}^0=19.9kJ\;mol^{-1}\;for\;K=3.3{\times}10^{-4}\;mol^{-1}$ and $16.5<{\Delta}G_{\theta}^0<23.3\;kJ\;mol^{-1}\;for\;K=3.3{\times}10^{-3}{\exp}(-4.6{\theta})\;mol^{-1}\;and\;0.2<\theta<0.8$) of H for the cathodic $H_2$ evolution reaction are determined using the phase-shift method and correlation constants. The inhomogeneous and lateral interaction effects on the adsorption of H are negligible. At the intermediate values of ${\theta},\;i.e,\;0.2<{\theta}<0.8$, the Temkin adsorption isotherm (${\theta}\;vs.\;E$) correlating with the Langmuir or the Frumkin adsorption isotherm (${\theta}\;vs.\;E$), and vice versa, is readily determined using the correlation constants. The phase-shift method and correlation constants are accurate and reliable techniques to determine the adsorption isotherms (${\theta}\;vs.\;E$) and related electrode kinetic and thermodynamic parameters(K, g, ${\Delta}G_{ads}^0, {\Delta}G_{\theta}^0$).

Preparation of $SrTiO_3$ Thin Film by RF Magnetron Sputtering and Its Dielectric Properties (RF 마그네트론 스퍼터링법에 의한 $SrTiO_3$박막제조와 유전특성)

  • Kim, Byeong-Gu;Son, Bong-Gyun;Choe, Seung-Cheol
    • Korean Journal of Materials Research
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    • v.5 no.6
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    • pp.754-762
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    • 1995
  • Strontium titanate(SrTiO$_3$) thin film was prepared on Si substrates by RF magnetron sputtering for a high capacitance density required for the next generation of LSTs. The optimum deposition conditions for SrTiO$_3$thin film were investigated by controlling the deposition parameters. The crystallinity of films and the interface reactions between SrTO$_3$film and Si substrate were characterized by XRD and AES respectively. High quality films were obtained by using the mixed gas of Ar and $O_2$for sputtering. The films were deposited at various bias voltages to obtain the optimum conditions for a high quality file. The best crystallinity was obtained at film thickness of 300nm with the sputtering gas of Ar+20% $O_2$and the bias voltage of 100V. The barrier layer of Pt(100nm)/Ti(50nm) was very effective in avoiding the formation of SiO$_2$layer at the interface between SrTiO$_3$film and Si substrate. The capacitor with Au/SrTiO$_3$/Pt/Ti/SiO$_2$/Si structure was prepared to measure the electric and the dielectric properties. The highest capacitance and the lowest leakage current density were obtained by annealing at $600^{\circ}C$ for 2hrs. The typical specific capacitance was 6.4fF/$\textrm{cm}^2$, the relative dielectric constant was 217, and the leakage current density was about 2.0$\times$10$^{-8}$ A/$\textrm{cm}^2$ at the SrTiO$_3$film with the thickness of 300nm.

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Social Tagging-based Recommendation Platform for Patented Technology Transfer (특허의 기술이전 활성화를 위한 소셜 태깅기반 지적재산권 추천플랫폼)

  • Park, Yoon-Joo
    • Journal of Intelligence and Information Systems
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    • v.21 no.3
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    • pp.53-77
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    • 2015
  • Korea has witnessed an increasing number of domestic patent applications, but a majority of them are not utilized to their maximum potential but end up becoming obsolete. According to the 2012 National Congress' Inspection of Administration, about 73% of patents possessed by universities and public-funded research institutions failed to lead to creating social values, but remain latent. One of the main problem of this issue is that patent creators such as individual researcher, university, or research institution lack abilities to commercialize their patents into viable businesses with those enterprises that are in need of them. Also, for enterprises side, it is hard to find the appropriate patents by searching keywords on all such occasions. This system proposes a patent recommendation system that can identify and recommend intellectual rights appropriate to users' interested fields among a rapidly accumulating number of patent assets in a more easy and efficient manner. The proposed system extracts core contents and technology sectors from the existing pool of patents, and combines it with secondary social knowledge, which derives from tags information created by users, in order to find the best patents recommended for users. That is to say, in an early stage where there is no accumulated tag information, the recommendation is done by utilizing content characteristics, which are identified through an analysis of key words contained in such parameters as 'Title of Invention' and 'Claim' among the various patent attributes. In order to do this, the suggested system extracts only nouns from patents and assigns a weight to each noun according to the importance of it in all patents by performing TF-IDF analysis. After that, it finds patents which have similar weights with preferred patents by a user. In this paper, this similarity is called a "Domain Similarity". Next, the suggested system extract technology sector's characteristics from patent document by analyzing the international technology classification code (International Patent Classification, IPC). Every patents have more than one IPC, and each user can attach more than one tag to the patents they like. Thus, each user has a set of IPC codes included in tagged patents. The suggested system manages this IPC set to analyze technology preference of each user and find the well-fitted patents for them. In order to do this, the suggeted system calcuates a 'Technology_Similarity' between a set of IPC codes and IPC codes contained in all other patents. After that, when the tag information of multiple users are accumulated, the system expands the recommendations in consideration of other users' social tag information relating to the patent that is tagged by a concerned user. The similarity between tag information of perferred 'patents by user and other patents are called a 'Social Simialrity' in this paper. Lastly, a 'Total Similarity' are calculated by adding these three differenent similarites and patents having the highest 'Total Similarity' are recommended to each user. The suggested system are applied to a total of 1,638 korean patents obtained from the Korea Industrial Property Rights Information Service (KIPRIS) run by the Korea Intellectual Property Office. However, since this original dataset does not include tag information, we create virtual tag information and utilized this to construct the semi-virtual dataset. The proposed recommendation algorithm was implemented with JAVA, a computer programming language, and a prototype graphic user interface was also designed for this study. As the proposed system did not have dependent variables and uses virtual data, it is impossible to verify the recommendation system with a statistical method. Therefore, the study uses a scenario test method to verify the operational feasibility and recommendation effectiveness of the system. The results of this study are expected to improve the possibility of matching promising patents with the best suitable businesses. It is assumed that users' experiential knowledge can be accumulated, managed, and utilized in the As-Is patent system, which currently only manages standardized patent information.

Improved Degradation Characteristics in n-TFT of Novel Structure using Hydrogenated Poly-Silicon under Low Temperature (낮은 온도 하에서 수소처리 시킨 다결정 실리콘을 사용한 새로운 구조의 n-TFT에서 개선된 열화특성)

  • Song, Jae-Ryul;Lee, Jong-Hyung;Han, Dae-Hyun;Lee, Yong-Jae
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2008.05a
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    • pp.105-110
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    • 2008
  • We have proposed a new structure of poly-silicon thin film transistor(TFT) which was fabricated the LDD region using doping oxide with graded spacer by etching shape retio. The devices of n-channel poly-si TFT's hydrogenated by $H_2$ and $HT_2$/plasma processes are fabricated for the devices reliability. We have biased the devices under the gate voltage stress conditions of maximum leakage current. The parametric characteristics caused by gate voltage stress conditions in hydrogenated devices are investigated by measuring /analyzing the drain current, leakage current, threshold voltage($V_{th}$), sub-threshold slope(S) and transconductance($G_m$) values. As a analyzed results of characteristics parameters, the degradation characteristics in hydrogenated n-channel polysilicon TFT's are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si Brain boundary due to dissolution of Si-H bonds. The structure of novel proposed poly-Si TFT's are the simplity of the fabrication process steps and the decrease of leakage current by reduced lateral electric field near the drain region.

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Design and Implementation of a Transparent Security Infrastructure using Filter and Transformer (필터와 트랜스포머를 이용한 투명한 보안기반의 설계 및 구현)

  • Kim, Yong-Min;Lee, Do-Heon;Noh, Bong-Nam;Choi, Rak-Man;Ine, So-Ran
    • The Transactions of the Korea Information Processing Society
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    • v.5 no.4
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    • pp.975-983
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    • 1998
  • In these days, information communication systems are based on both open distributed computing technologies and object-oriented techniques like inheritance, encapsulation and object reuse to support various system configuration and application. As information systems are interconnected through unsecure networks, the need for the secure information exchange is more critical than before. In this paper, we have designed and implemented a transparent CORBA-basce Security infrastructure with authentication, security context association, access control and security information management to support a secure applications in distributed object environment. SESAME Ver. 4 was adopted as an external security service to manage user privilege attributes and to distribute keys for data encryption, decryption and integrity. Using filter and transformer with an interface to Object Request Broker, it provides a transparent security service to applications. The filter objects are special classes that allow additional parameters to be inserted into messages before they are sent and removed just after they are received. The transformer objects are special classes that allow direct access to the byte stream of every messages for encryption and decryption before it is sent and just after it is received. This study is to implement the access control interceptor(ACI) and the secure invocation interceptor(SII) of secure ORB defined in CORBA using filter and transformer.

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Modeling of Earthquake Ground Motion in a Small-Scale Basin (소규모 분지에서의 지진 지반운동 모델링)

  • Kang, Tae-Seob
    • Geophysics and Geophysical Exploration
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    • v.15 no.2
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    • pp.92-101
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    • 2012
  • Three-dimensional finite-difference simulation in a small-scale half-sphere basin with planar free-surface is performed for an arbitrary shear-dislocation point source. A new scheme to deal with free-surface boundary condition is presented. Then basin parameters are examined to understand main characteristics on ground-motion response in the basin. To analyze the frequency content of ground motion in the basin, spectral amplitudes are compared with each other for four sites inside and outside the basin. Also particle motions for those sites are examined to find which kind of wave plays a dominant role in ground-motion response. The results show that seismic energy is concentrated on a marginal area of the basin far from the source. This focusing effect is mainly due to constructive interference of the direct Swave with basin-edge induced surface waves. Also, ground-motion amplification over the deepest part of the basin is relatively lower than that above shallow basin edge. In the small-scale basin with relatively simple bedrock interface, therefore, the ground-motion amplification may be more related to the source azimuth or direction of the incident waves into the basin rather than depth of it.

High Speed Direct Bonding of Silicon Wafer Using Atmospheric Pressure Plasma (상압 플라즈마를 이용한 고속 실리콘 웨이퍼 직접접합 공정)

  • Cha, Yong-Won;Park, Sang-Su;Shin, Ho-Jun;Kim, Yong Taek;Lee, Jung Hoon;Suh, Il Woong;Choa, Sung-Hoon
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.3
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    • pp.31-38
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    • 2015
  • In order to achieve a high speed and high quality silicon wafer bonding, the room-temperature direct bonding using atmospheric pressure plasma and sprayed water vapor was developed. Effects of different plasma fabrication parameters, such as flow rate of $N_2$ gas, flow rate of CDA (clear dry air), gap between the plasma head and wafer surface, and plasma applied voltage, on plasma activation were investigated using the measurements of the contact angle. Influences of the annealing temperature and the annealing time on bonding strength were also investigated. The bonding strength of the bonded wafers was measured using a crack opening method. The optimized condition for the highest bonding strength was an annealing temperature of $400^{\circ}C$ and an annealing time of 2 hours. For the plasma activation conditions, the highest bonding strength was achieved at the plasma scan speed of 30 mm/sec and the number of plasma treatment of 4 times. After optimization of the plasma activation conditions and annealing conditions, the direct bonding of the silicon wafers was performed. The infrared transmission image and the cross sectional image of bonded interface indicated that there is no void and defects on the bonded wafers. The bonded wafer exhibited a bonding strength of average $2.3J/m^2$.

Stability of the growth process at pulling large alkali halide single crystals

  • V.I. Goriletsky;S.K. Bondarenko;M.M. Smirnov;V.I. Sumin;K.V. Shakhova;V.S. Suzdal;V.A. Kuznetzov
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.1
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    • pp.5-14
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    • 2003
  • Principles of a novel pulse growing method are described. The method realized in the crystal growing on a seed from melts under raw melt feeding provided a more reliable control of the crystallization process when producing large alkali halide crystals. The slow natural convection of the melt in the crucible at a constant melt level is intensified by rotating the crucible, while the crystal rotation favors a more symmetrical distribution of thermal stresses over the crystal cross-section. Optimum rotation parameters for the crucible and crystal have been determined. The spatial position oi the solid/liquid phase interface relatively to the melt surface, heaters and the crucible elements are considered. Basing on that consideration, a novel criterion is stated, that is, the immersion extent of the crystallization front (CF) convex toward the melt. When the crystal grows at a <> CF immersion, the raised CF may tear off from the melt partially or completely due to its weight. This results in avoid formation in the crystal. Experimental data on the radial crystal growth speed are discussed. This speed defines the formation of a gas phase layer at the crystal surface. The layer thickness il a function of time a temperature at specific values of pressure in the furnace and the free melt surface dimensions in the gap between the crystal and crucible wall. Analytical expressions have been derived for the impurity component mass transfer at the steady-state growth stage describing two independent processes, the impurity mass transfer along the <> path and its transit along the <> one. The heater (and thus the melt) temperature variation is inherent in any control system. It has been shown that when random temperature changes occur causing its lowering at a rate exceeding $0.5^{\circ}C/min$, a kind of the CF decoration by foreign impurities or by gas bubbles takes place. Short-term temperature changes at one heater or both result in local (i.e., at the front) redistribution of the preset axial growth speed.