• 연구논문집
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• 통권27호
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• pp.201-208
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• 1997

본 연구에서는 배기 가스 촉매정화용 금속담체 지지체의 접합특성을 향상시키기 위하여, 브레이징 접합부의 고온내산화성에 미치는 브레이징 합금원소의 영향을 고찰하였다. 브레이징은 Ni계 합금인 BNi-5 분말(Ni-Cr-Si계합금)과 MBF-50 foil(Ni-Cr-Si-B계 합금)을 사용하여 $1200^\circC$의 진공중에서 행하였다. 약 1-1.5 wt%의 B을 함유한 MBF-50으로 브레이징된 시편이 BNi-5로 브레이징된 시편에 비해 내산화성이 떨어지는 것으로 나타났으며. 이것은 합금/브레이징 계변을 따라 형성된 Kirkendall void를 통한 산소의 빠른 침투로 인한 것으로 생각된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.354-357
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• 2002

Thermally grown gate oxide on 4H-SiC wafer was investigated. The oxide layers were grown at l150$^{\circ}C$ varying the carrier gas and post activation annealing conditions. Capacitance-Voltage(C-V) characteristic curves were obtained and compared using various gate electrode such as Al, Ni and poly-Si. The interface trap density can be reduced by using post oxidation annealing process in Ar atmosphere. All of the samples which were not performed a post oxidation annealing process show negative oxide effective charge. The negative oxide effective charges may come from oxygen radical. After the post oxidation annealing, the oxygen radicals fixed and the effective oxide charge become positive. The effective oxide charge is negative even in the annealed sample when we use poly silicon gate. Poly silicon layer was dope by POCl$_3$ process. The oxide layer may be affected by P ions in poly silicon layer due to the high temperature of the POCl$_3$ doping process.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.29-32
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• 2001

In this paper, the thermal oxidation behaviors and the electrical characteristics of the thermal oxide grown on SiC are discussed. For these studies the oxide layers with various thickness were on SiC in wet $O_2$ or dry $O_2$ at l15$0^{\circ}C$ and the MOS capacitors using the 350$\AA$ gate oxide grown in wet $O_2$ were fabricated and electrically characterized. It was found from the experimental results that the oxidation rate of SiC with the Si-face and with the carbon-face were about 10% and 50% of oxidation rate of Si. The C-V measurement results of the SiC oxide showed abnormal hysterisis properties which had ever been not observed for the Si oxide. And the hysterisis behavior was seen more significant when initial bias voltage was more negative or more positive. The hysterisis property of the SiC oxide was believed to be due the substantial amount of the deep level traps to exist at the interface between the oxide and the SiC substrate. The leakage of the SiC oxide was found to be one order larger than the Si oxide, but the breakdown strength was almost equal to that of the Si oxide.

• 한국표면공학회지
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• 제49권3호
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• pp.225-230
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• 2016

The present work was conducted to investigate the effects of NaF concentration in phosphate and silicate-containing alkaline electrolyte on the morphology, thickness, surface roughness and hardness of anodic oxide films formed on AZ31 Mg alloy by plasma electrolytic oxidation (PEO) method. The PEO films showed flat surface morphology with pores in the absence of NaF in the electrolyte, but nodular features appeared on the PEO film surface prepared in NaF-containing electrolyte. Numerous pores ranging from 1 to $20{\mu}m$ in size were observed in the PEO films and the size of pores decreased with increasing NaF concentration in the electrolyte. Surface roughness and thickness of PEO films showed increases with increasing NaF concentration. Hardness of the PEO films also increased with increasing NaF concentration. It was noticed that hardness of inner part of the PEO films is lower than that of outer part of them, irrespective of the concentration of NaF. The low hardness of PEO films was explained by the presence of a number of small size pores less than $2{\mu}m$ near the PEO film/substrate interface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.339-339
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• 2010

The metallic nanoparticles (Pt, Au, Ag. Cu, etc.) supported on ceria-titania mixed oxide exhibit a high catalytic activity for the water gas shift reaction ($H_2O\;+\;CO\;{\leftrightarrow}\;H_2\;+\;CO_2$) and the CO oxidation ($O_2\;+\;2CO\;{\leftrightarrow}\;2CO_2$). It has been speculated that the high catalytic activity is related to the easy exchange of the oxidation states of ceria ($Ce^{3+}$ and $Ce^{4+}$) on titania, but very little is known about the ceria titanium interaction, the growth mode of metal on ceria titania complex, and the reaction mechanism. In this work, the growth of $CeO_x$ and Au/$CeO_x$ on rutile $TiO_2$(110) have been investigated by Scanning Tunneling Microscopy (STM), Photoelectron Spectroscopy (PES), and DFT calculation. In the $CeO_x/TiO_2$(110) systems, the titania substrate imposes on the ceria nanoparticles non-typical coordination modes, favoring a $Ce^{3+}$ oxidation state and enhancing their chemical activity. The deposition of metal on a $CeO_x/TiO_2$(110) substrate generates much smaller nanoparticles with an extremely high activity. We proposed a mechanism that there is a strong coupling of the chemical properties of the admetal and the mixed-metal oxide: The adsorption and dissociation of water probably take place on the oxide, CO adsorbs on the admetal nanoparticles, and all subsequent reaction steps occur at the oxide-admetal interface.

• 한국표면공학회지
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• 제52권5호
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• pp.258-264
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• 2019

Assembling heterostructures by combining dissimilar oxide semiconductors is a promising approach to enhance charge separation and transfer in photoelectrochemical (PEC) water splitting. In this work, the CuO nanorods array/$Cu_2O$ thin film bilayered heterostructure was successfully fabricated by a facile method that involved a direct electrodeposition of the $Cu_2O$ thin film onto the vertically oriented CuO nanorods array to serve as the photoelectrode for the PEC water oxidation. The resulting copper-oxide-based heterostructure photoelectrode exhibited an enhanced PEC performance compared to common copper-oxide-based photoelectrodes, indicating good charge separation and transfer efficiency due to the band structure realignment at the interface. The photocurrent density and the optimal photocurrent conversion efficiency obtained on the CuO nanorods/$Cu_2O$ thin film heterostructure were $0.59mA/cm^2$ and 1.10% at 1.06 V vs. RHE, respectively. These results provide a promising route to fabricating earth-abundant copper-oxide-based photoelectrode for visible-light-driven hydrogen generation using a facile, low-cost, and scalable approach of combining electrodeposition and hydrothermal synthesis.

• 열처리공학회지
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• 제16권6호
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• pp.335-340
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• 2003

To improve properties of wear resistance and anti-corrosion of the trivalent chromium platings, oxinitrocarbunsing and steam oxidation were conducted. Armophous trivalent Cr platings could be transformed to chromium carbides of high hardness, that showed low friction and wear rate. Even though micro-cracks were within as platings, superior anti-corrosion property was obtained by these treatments due to healing of cracks at the interface between the trivalent chromium platings and substrate.

• 한국세라믹학회지
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• 제32권1호
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• pp.31-36
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• 1995

(100) Si was oxidized in N2O ambient, and the film properties of oxynitride dielectrics were compared with pure SiO2. The growth rate, after pre-oxidation in O2/N2 ambient with raising temperature, is faster than that of O2/N2O treatment during the same condition. Nitrogen piles up at the interface of SiO2 and Si substrate and the content is about 2atom%. Comparing with pure SiO2, oxynitride dielectrics shows less dielectric breakdown failures and flat-band voltage shift, and good diffusion barrier property to dopant(BF2) is also observed.

• International Journal of Precision Engineering and Manufacturing
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• 제5권3호
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• pp.5-10
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• 2004

Electric contacts serve the purpose of transmitting electric signals across two conducting components. In this paper, the effects of contact conditions such as surface roughness, oxidation, and contamination were investigated with respect to electrical resistance variation of a connector in a direct current circuit. Such change in the electrical resistance is particularly important for low power circuits. The experimental results showed that compared with the effects of contact surface scratch or oxidation, the effect of contamination on the resistance variation was the most significant. In order to minimize failure due to electrical resistance change at the contact region, proper sealing to prevent contamination from entering the interface is needed.

• Bulletin of the Korean Chemical Society
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• 제26권10호
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• pp.1560-1564
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• 2005

The influence of cetyltrimethylammonium bromide (CTAB) on the electrochemical behavior of bisphenol A at the carbon paste electrode (CPE) was investigated. CTAB, with a hydrophobic C-H chain, can adsorb at the CPE surface via hydrophobic interaction and then change the electrode/solution interface, and finally affects the electrochemical response of bisphenol A, confirming from the remarkable oxidation peak current enhancement. The electrode process of bisphenol A was examined, and then all the experimental parameters which affects the electrochemical response of bisphenol A, such as pH value of the supporting electrolyte, accumulation potential and time, potential scan rate and the concentration of CTAB, were examined. Finally, a sensitive and simple voltammetric method was developed for the determination of bisphenol A. Under the optimum conditions, the oxidation peak current of bisphenol A varied linearly with its concentration over the range from $2.5\;{\times}\;10^{-8}\;to\;1\;{\times}\;10^{-6}$ mol/L, and the detection limit was found to be $7.5\;{\times}\;10^{-9}$ mol/L. This method was successfully employed to determine bisphenol A in some waste plastic samples.