• 멤브레인
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• 제5권2호
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• pp.89-96
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• 1995

Azobenzene기를 가지는 인산형 양친매성 화합물의 기/액 계면에 있어서으 단분자막 거동이 $\pi-A$ 곡선 및 표면흡수스펙트라로 검토되었다. 분자간의 강한 수소결합력을 가지는 이 화합물들은 수면에 전개 후 즉시 결정화하여 단분자막 domain들을 형성한 회합체 흡수스펙트라를 나타내었다. 그러나 subphase의 조건(분자량이 큰 유가염의 첨가 및 pH의 상승)을 변화시킴에 의해 결정 domain 형성을 제어하는 것이 가능하였다. 한편, 금속이온 첨가는 인산령 양친매성 단분자막의 분재배향상태를 변화시켰다. 금속이온의 전하가 높을수록 ($1\leq2$ < 3 < 4 가), azobenzene기를 가지는 양친매성 화합물의 분자상태가 tilt된 배향성에 기인하는 장파장으로 이동한 흡수극대를 나타내었다. 이것은 서로 다른 전하를 가진 금속이온을 흡착시킴에 의해 단분자막의 분자배향성을 변화시켜, 단분자막의 집합상태 제어 가능성을 시사한다.

• 한국재료학회지
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• 제11권2호
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• pp.151-154
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• 2001

상부전극, Pt, Ir, 그리고 $IrO_2$, 에 따라 수소 열처리전과 후, 그리고 회복열처리시 누설전류특성을 고찰하였다. Pt/PLZT/Pt 케페시터는 수소열처리 후에 다시 회복열처리를 수행하면 완전히 이력곡선의 회복을 보이며 또한 피로특성도 거의 회복 된다. Pt과 IrO$_2$ 상부전극의 경우의 진 누설전류 특성은 열처리조건에 관계없이 강한 시간 의존성을 갖는 space-charge influenced injection모델에 적합하다. 반면에 Ir 상부전극의 경우는 Ir과 PLZT 사이의 계면에 헝성된 전도성 상인 $IrO_2$로 인해 높은 누설전류 밀도를 보이면서 relaxation current 영역이 없이 steady state 영역을 보이는, 주로 Schottky barrier 모델에 의해 설명된다.

• Molecules and Cells
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• 제42권6호
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• pp.460-469
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• 2019

Bacterial ${\alpha}-type$ carbonic anhydrase (${\alpha}-CA$) is a zinc metalloenzyme that catalyzes the reversible and extremely rapid interconversion of carbon dioxide to bicarbonate. In this study, we report the first crystal structure of a hyperthermostable ${\alpha}-CA$ from Persephonella marina EX-H1 (pmCA) in the absence and presence of competitive inhibitor, acetazolamide. The structure reveals a compactly folded pmCA homodimer in which each monomer consists of a 10-stranded ${\beta}-sheet$ in the center. The catalytic zinc ion is coordinated by three highly conserved histidine residues with an exchangeable fourth ligand (a water molecule, a bicarbonate anion, or the sulfonamide group of acetazolamide). Together with an intramolecular disulfide bond, extensive interfacial networks of hydrogen bonds, ionic and hydrophobic interactions stabilize the dimeric structure and are likely responsible for the high thermal stability. We also identified novel binding sites for calcium ions at the crystallographic interface, which serve as molecular glue linking negatively charged and otherwise repulsive surfaces. Furthermore, this large negatively charged patch appears to further increase the thermostability at alkaline pH range via favorable charge-charge interactions between pmCA and solvent molecules. These findings may assist development of novel ${\alpha}-CAs$ with improved thermal and/or alkaline stability for applications such as $CO_2$ capture and sequestration.

• 접착 및 계면
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• 제13권3호
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• pp.109-115
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• 2012

2단계 유화중합에 의한 단분산의 블루칼라 착색 poly(styrene-co-acrylic acid) 라텍스를 성공적으로 제조하였다. 0.21 ${\mu}m$의 polystyrene 시드를 이용하여 중합 2단계에서 Blue 606 염료와 acrylic acid의 중합으로 carboxyl 음이온을 갖는 블루칼라 라텍스를 합성하였다. 본 연구에서 제조한 블루칼라 라텍스는 모두 1.01 이하의 우수한 단분산도를 가지며 0.25~0.42 ${\mu}m$ 범위의 입자경을 나타내었다. 중합 2단계에서 acrylic acid 부가시간이 늘어남에 따라 입자경은 증가하였고 30 min 이상으로 늘어남에 따라 콜로이드 안정성을 갖는 블루칼라 라텍스가 제조되었다. 20 wt% AA 농도에서 -145 mV의 제타전위와 $-9.4{\times}10^{-6}\;cm^2/Vs$의 전기영동이동도를 나타내었다. 25 wt% DVB 농도하에서 396.7 K의 높은 유리전이온도를 나타내었다.

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.944-948
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• 2011

In this paper, flicker noise characteristic and channel hot carrier degradation of NMOSFETs with plasma nitrided oixde (PNO) and thermally nitrided oxide (TNO) are analyzed in depth. Compared with NMOSFET with TNO, flicker noise characteristic of NMOSFET with PNO is improved significantly because nitrogen density in PNO near the Si/$SiO_2$ interface is less than that in TNO. However, device degradation of NMOSFET with PNO by channel hot carrier stress is greater than that with TNO although PMOSFET with PNO showed greater immunity to NBTI degradation than that with TNO in previous study. Therefore, concurrent investigation of the reliability as well as low frequency noise characteristics of NMOSFET and PMOSFET is required for the development of high performance analog MOSFET technology.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권4호
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• pp.449-457
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• 2012

The program/erase (P/E) cyclic endurances including bias temperature instability (BTI) behaviors of Metal-$Al_2O_3$-Nitride-Oxide-Semiconductor (MANOS) memories are investigated in comparison with those of Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) memories. In terms of BTI behaviors, the SONOS power-law exponent n is ~0.3 independent of the P/E cycle and the temperature in the case of programmed cell, and 0.36~0.66 sensitive to the temperature in case of erased cell. Physical mechanisms are observed with thermally activated $h^*$ diffusion-induced Si/$SiO_2$ interface trap ($N_{IT}$) curing and Poole-Frenkel emission of holes trapped in border trap in the bottom oxide ($N_{OT}$). In terms of the BTI behavior in MANOS memory cells, the power-law exponent is n=0.4~0.9 in the programmed cell and n=0.65~1.2 in the erased cell, which means that the power law is strong function of the number of P/E cycles, not of the temperature. Related mechanism is can be explained by the competition between the cycle-induced degradation of P/E efficiency and the temperature-controlled $h^*$ diffusion followed by $N_{IT}$ passivation.

• 대한의용생체공학회:의공학회지
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• 제14권4호
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• pp.321-326
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• 1993

Recently, microcomputer technology has been developed rapidly and it provides not only graphic user interface that can be fraendly accessable but also large storage capacity to han- dle much hospital information. Almost all the order communication system for hospital has been developed under the concept of host and terminal environment since last 20 years. However, host-terminal system has not been successful in korea simply because most of physicians prescibe for rrlany patients a day(sometimes more than 150 patients a day). Also, under the host-terminal environment, programs are not friendly implemented for users. Since March 1991, we had developed order communication system for out-patients(named YONSEI-PC) using personal computer(PC) and local area network(LAN) . Since September 1992, we has applied succesfully in the Yonsei Cardiovascular Center, Sevrance Hospital, Yonsei University College of Medicine. This system consisted with Server and Clients which is communicated through LAN(Ethernet). The system also use the Host computer(IBM 9221 170) as a data bank and communicates to the Server with emulation card(3270 emulator, Interlink Inc., Korea) . After introducing this system, it enables patients to receive drugs witllin 20 minutes after prescription of 300-400 patients per day and it seemed to be effective system not to reduce waiting time for the patients but also to remove charge-troubling(due to His-entry of prescription) . This system also seems to be effective in terms of office automatism for hospital management. However users, usually physitions, required more friendly and easy system to operate and we thought that the most important one to successfully introduce order communication computer system in the hospital is user interface.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.13-20
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• 2003

Both MgO and $Sc_2O_3$ are shown to provide low interface state densities (in the $10^{11}{\;}eV^{-1}{\;}cm{\;}^{-2}$ range)on n-and p-GaN, making them useful for gate dielectrics for metal-oxide semiconductor(MOS) devices and also as surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs).Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of $~3{\;}{\times}{\;}10^{12}{\;}cm^{-2}$. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN structures are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

• 전자공학회논문지D
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• 제35D권10호
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• pp.83-90
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• 1998

MOS 캐패시터의 게이트 전극을 비정질 상태의 실리콘으로 형성하여 GOI(Gate Oxide Integrity)특성에 미치는 불순물 활성화 열처리의 효과를 조사하였다. LPCVD(Low Pressure Chemical Vapor Deposition) 방법으로 증착한 비정질 실리콘 게이트 전극은 활성화 열처리에 의하여 다결정 실리콘 상태로 구조가 변화하며, 불순물 원자의 활성화가 충분히 이루어졌다. 또한, 비정질 상태의 게이트 전극은 커다란 압축 응력(compressive stress)을 가지지만, 활성화 열처리 온도가 700℃에서 900℃로 증가함에 따라서 응력이 완화되었고 게이트 전극의 저항도 감소하는 특성을 보였다. 또한 얇은 게이트 산화막의 신뢰성 및 산화막의 계면특성은 활성화 열처리 온도에 크게 의존하고 있었다. 900℃에서 활성화 열처리를 한 경우가 700℃에서 열처리한 경우보다 산화막내에서의 전하 포획 특성이 개선되었으며, 산화막의 신뢰성이 향상되었다. 특히, TDDB 방법으로 예측한 게이트 산화막의 수명은 700℃의 열처리에서는 3×10/sup 10/초였지만, 900℃에서의 열처리에서는 2×10/sup 12/초로 현저하게 개선되었다. 그리고, 산화막 계면에서의 계면 전하 밀도는 게이트의 응력 완화에 따라서 개선되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.63-63
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• 2010

Using both experimental and theoretical approaches, we have investigated the adsorption properties of an organic molecule (HATCN), which is used in OLEDs as an efficient hole injection layer, on metal and inert surfaces. We have also studied the structural and electronic properties of such interfaces and the dependences on deposition thickness. We have observed different trends in work function changes with different surfaces. Our photoelectron spectroscopic measurements have revealed an abnormal phenomenon in HATCN on a metal (Cu) surface: the work function decreases at lower coverage (~monolayer) of HATCN on a metal (Cu) surface, but it increases back and becomes higher than that of a bare Cu surface at higher coverage. It has, on the contrary, been observed that the work function of graphene surface just increases as the HATCN coverage increases. Our first-principles density functional calculations has not only verified our experimental observations, but also disclosed the underlying mechanism of such abnormal and different work function behaviors. We have found that the change in work function results from mutual polarization induced by the geometrical deformation and the bond dipole formed at the interface due to the charge redistribution. At low coverage of HAT-CN on Cu substrate, the former reduces the work function significantly by pulling down the vacuum level, while the latter tends to push up the vacuum level resulting in the work function increase.