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http://dx.doi.org/10.4313/JKEM.2011.24.12.944

Comparative Analysis of Flicker Noise and Reliability of NMOSFETs with Plasma Nitrided Oxide and Thermally Nitrided Oxide  

Lee, Hwan-Hee (Department of Electronic Engineering, Chungnam University)
Kwon, Hyuk-Min (Department of Electronic Engineering, Chungnam University)
Kwon, Sung-Kyu (Department of Electronic Engineering, Chungnam University)
Jang, Jae-Hyung (Department of Electronic Engineering, Chungnam University)
Kwak, Ho-Young (Department of Electronic Engineering, Chungnam University)
Lee, Song-Jae (Department of Electronic Engineering, Chungnam University)
Go, Sung-Yong (DMS Co. Ltd.)
Lee, Weon-Mook (DMS Co. Ltd.)
Lee, Hi-Deok (Department of Electronic Engineering, Chungnam University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.12, 2011 , pp. 944-948 More about this Journal
Abstract
In this paper, flicker noise characteristic and channel hot carrier degradation of NMOSFETs with plasma nitrided oixde (PNO) and thermally nitrided oxide (TNO) are analyzed in depth. Compared with NMOSFET with TNO, flicker noise characteristic of NMOSFET with PNO is improved significantly because nitrogen density in PNO near the Si/$SiO_2$ interface is less than that in TNO. However, device degradation of NMOSFET with PNO by channel hot carrier stress is greater than that with TNO although PMOSFET with PNO showed greater immunity to NBTI degradation than that with TNO in previous study. Therefore, concurrent investigation of the reliability as well as low frequency noise characteristics of NMOSFET and PMOSFET is required for the development of high performance analog MOSFET technology.
Keywords
PNO; TNO; Flicker noise; CHC; Reliability; Interface trap; Charge pumping;
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Times Cited By KSCI : 2  (Citation Analysis)
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