• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2012.05a
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• pp.342-349
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• 2012

We study the gap effect on detonating high explosives using the characteristic acoustic impedance theory and numerical simulation. A block of charge embedded with multiple gap inserts is detonated at one end to understand the ensuing flame propagation through multiple gap materials. The present high-order multimaterial simulation provides meaningful validation of complex interface tracking algorithm as it is implemented in the SNU-Hydropack code.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.120-123
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• 2019

The effect of surface plasmon on ZTO thin films was investigated. The phenomenon of depletion occurring in the interface of the ZTO thin film created a potential barrier and the dielectric layer of the depletion formed a non-mass particle called plasmon. ZTO thin film represents n-type semiconductor features, and surface current by plasma has been able to obtain the effect of improving electrical efficiency as a result of high current at positive voltage and low current at negative voltage. It can be seen that the reduction of electric charge due to recombination of electronic hole pairs by heat treatment of compound semiconductors induces higher surface current in semiconductor devices.

• Journal of the Optical Society of Korea
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• v.17 no.1
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• pp.10-15
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• 2013

Adsorption behavior of counterions under a Langmuir monolayer was investigated by sum-frequency generation (SFG) spectroscopy. By comparing SFG spectra of arachidic acid (AA) Langmuir monolayer/water interface with and without added salt, it was found that the simple trivalent cation $La^{3+}$ adsorbed on AA monolayer only when the carboxylic headgroups are charged (deprotonated), implying that counterion adsorption is induced by Coulomb interaction. On the other hand, metal hydroxide complex $Fe(OH)_3$ adsorbed even on a charge-neutral AA monolayer, indicating that the adsorption of iron hydroxide is due to chemical interaction such as covalent or hydrogen bonding to the headgroup of the molecules at the monolayer.

• Journal of Industrial and Engineering Chemistry
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• v.67
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• pp.486-496
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• 2018

Bimetallic Pd@Ni nanostructure exhibited enhanced co-catalytic activity for the selective hydrogenation of benzaldehyde compare to their monometallic counterparts. Impregnation of these mono/bimetallic nanostructures on mesoporous $TiO_2$ leads to several surface modifications. The bimetallic PNT-3 ($Pd_3@Ni_1/mTiO_2$) exhibited large surface area ($212m^2g^{-1}$), and low recombination rate of the charge carriers ($e^--h^+$). The hydrogenation reaction was analyzed under controlled experiments. It was observed that under UV-light irradiations and saturated hydrogen atmosphere the bimetallic PNT-3 photocatalyst display higher rate constant $k=5.31{\times}10^{-1}h^{-1}$ owing to reduction in the barrier height which leads to efficiently transfer of electron at bimetallic/$mTiO_2$ interface.

• Journal of information and communication convergence engineering
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• v.18 no.4
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• pp.245-253
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• 2020

The human body and nervous system transmit information through electric charges. After the electric charge transmits information to the brain, we can feel pain, numbness, comfort, and other feelings. Electric therapy is currently used widely in clinical practice because the field of examination is more representative of electrocardiogram, and in the field of treatment is more representative of electrotherapy. In this study, we design a system for neurophysiological therapy and conduct parameter calculation and model selection for the components of the system. The system is based on a discontinuous conduction mode (DCM) boost circuit, and controlled and regulated by a single-chip microcomputer. The system does not only have a low cost but also fully considers the safety of use, convenience of the human-computer interface, adjustment sensitivity, and waveform diversity in the design. In future, it will have strong implications in the field of electrotherapy.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.114-118
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• 2022

The stabilized all-solid-state battery structure indicate a fundamental alternative to the development of next-generation energy storage devices. Existing liquid electrolyte structures severely limit battery stability, creating safety concerns due to the growth of Li dendrites during rapid charge/discharge cycles. In this study, a low-dimensional graphene quantum dot layer structure was applied to demonstrate stable operating characteristics based on Li+ ion conductivity and excellent electrochemical performance. Transmission electron microscopy analysis was performed to elucidate the microstructure at the interface. The low-dimensional structure of GQD-based solid electrolytes has provided an important strategy for stable scalable solid-state lithium battery applications at room temperature. This study indicates that the low-dimensional carbon structure of Li-GQDs can be an effective approach for the stabilization of solid-state Li matrix architectures.

• Journal of Industrial Technology
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• v.43 no.1
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• pp.43-48
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• 2023

Spinel LiNi_0.5Mn_1.5O₄ (LNMO) has been considered as one of most promising cathode material, because of its low-cost and competitive energy density. However, 4.7V vs. Li/Li⁺ of high operating potential facilitates electrolyte degradation on cathode-electrolyte interface during charge-discharge process. In particular, commercial polyvinylidene fluoride (PVDF) is not sutaible for LNMO cathode binder because its weak van der waals force induces thick and non-uniform coverage on the cathode surface. In this review, we study high performance binders for LNMO cathode, which forms uniform coating layer to prevent direct contact between electrolyte and LNMO particle as well as modifying high quality cathode electrolyte interphase, improved cell performace.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.60-64
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• 2024

The threshold voltage shift in thin-film transistors (TFTs) is modeled using stretched-exponential (SE) and stretched-hyperbola (SH) functions. These models are derived by introducing empirical parameters into reaction rate equations that describe defect generation or charge trapping caused by hydrogen diffusion in the dielectric or interface. Separately, the dielectric relaxation phenomena are also described by the same reaction rate equations based on defect diffusion. Dielectric relaxation was initially modeled using the SE model, and various models have been proposed using fractional calculus. In this study, the characteristics of the threshold voltage shift and the dielectric relaxation phenomena are compared and analyzed to explore the applicability of analytical models used in the field of dielectric relaxation, in addition to the conventional SE and SH models.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.224-230
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• 2001

The characteristics of $NO/N_2O$ annealed reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of Non-Volatile Semiconductor Memory (NVSM) were investigated by Dynamic Secondary Ion Mass Spectrometry (D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), and Auger Electron Spectroscopy (AES). The specimen was annealed by $NO/N_2O$ after initial oxide process and then rcoxidized for nitrogen redistribution in nitrided oxide. Out-diffusion of incorporated nitrogen during the wet oxidation in reoxidation process took place more strongly than that of the dry oxidation. It seems to indicate that hydrogen plays a role in breaking the Si N bonds. As reoxidation proceeds, incorporated nitrogen of $NO/N_2O$ annealed nitrided oxide is obsen-ed to diffuse toward the surface and substrate at the same time. ToF-SIMS results show that SiON species are detected at the initialoxide interface, and Si,NO species near the new $Si_2NO$ interface that formed after reoxidation. These SiON and $Si_2NO$ species most likely to relate to the origin of the state of memory charge traps in reoxidized nitrided oxide, because nitrogen dangling bonds of SiON and silicon dangling bonds of $Si_2NO$ are contained defects associated with memory effect.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.41 no.1
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• pp.25-32
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• 2004

Nowadays image processing is very useful for some field of traffic applications. The one reason is we can construct the system in a low price, the other is the improvement of hardware processing power, it can be more fast to processing the data. In traffic field, the development of image using system is interesting issue. Because it has the advantage of price of installation and it does not obstruct traffic during the installation. In this study, 1 propose the traffic monitoring system that implement on the embedded system environment. The whole system consists of two main part, one is host controller board, the other is image processing board. The part of host controller board take charge of control the total system interface of external environment, and OSD(On screen display). The part of image processing board takes charge of image input and output using video encoder and decoder, Image classification and memory control of using FPGA, control of mouse signal. And finally, for stable operation of host controller board, uC/OS-II operating system is ported on the board.