• Title/Summary/Keyword: interface charge

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Tungsten Silicide ($WSi_2$) for Alternate Gate Metal in Metal-Oxide-Semiconductor (MOS) Devices (금속-산화막-반도체 소자에서 대체 게이트 금속인 텅스텐 실리사이드의 특성 분석)

  • 노관종;윤선필;양성우;노용한
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.64-67
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    • 2000
  • Tungsten silicide(WSi$_2$) is proposed for the alternate gate electrode of ULSI MOS devices. Good structural property and low resistivity of WSi$_2$ deposited by a low pressure chemical vapor deposition(LPCVD) method directly on SiO$_2$ is obtained after annealing. Especially, WSi$_2$-SiO2 interface remains flat after annealing tungsten silicide at high temperature. Electrical characteristics of annealed WSi$_2$-SiO$_2$-Si(MOS) capacitors were improved in view of charge trapping.

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Characterization of Hot Carrier Mechanism of Nano-Scale CMOSFETs (나노급 소자의 핫캐리어 특성 분석)

  • Na Jun-Hee;Choi Seo-Yun;Kim Yong-Goo;Lee Hi-Deok
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.327-330
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    • 2004
  • It is shown that the hot carrier degradation due to enhanced hot holes trapping dominates PMOSFETs lifetime both in thin and thick devices. Moreover, it is found that in 0.13 ${\mu}m$ CMOSFET the PMOS lifetime under CHC (Channel Hot Carrier) stress is lower than the NMOSFET lifetime under DAHC (Drain Avalanche Hot Carrier) stress. Therefore. the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method and highly necessary to enhance overall device lifetime or circuit lifetime in upcoming nano-scale CMOS technology.

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Nanocomposites for microelectronic packaging

  • Lee, Sang-Hyeon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.99.1-99.1
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    • 2016
  • The materials for an electronic packaging provide diverse important functions including electrical contact to transfer signals from devices, isolation to protect from the environment and a path for heat conduction away from the devices. The packaging materials composed of metals, ceramics, polymers or combinations are crucial to the device operating properly and reliably. The demand of effective charge and heat transfer continuous to be challenge for the high-speed and high-power devices. Nanomaterials including graphene, carbon nanotube and boron nitride, have been designed for the purpose of exploiting the high thermal, electrical and mechanical properties by combining in the matrix of metal or polymer. In addition, considering the inherent electrical and surface properties of graphene, it is expected that graphene would be a good candidate for the surface layer of a template in the electroforming process. In this talk, I will present recent our on-going works in nanomaterials for microelectronic packaging: 1) porous graphene/Cu for heat dissipations, 2) carbon-metal composites for interconnects and 3) nanomaterials-epoxy composites as a thermal interface materials for electronic packaging.

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Optoelectronics based on 2D semiconductor heterostructures

  • Lee, Cheol-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.101.1-101.1
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    • 2016
  • Van der Waals (vdW) heterostructures built from two-dimensional layered materials provide an unprecedented opportunity in designing new material systems because the lack of dangling bonds on the vdW surfaces enables the creation of high-quality heterointerfaces without the constraint of atomically precise commensurability. In particular, the ability to build artificial heterostructures, combined with the recent advent of transition metal dichalcogenides, allows the fabrication of unique semiconductor heterostructures in an ultimate thickness limit for fundamental studies as well as novel device applications. In this talk, we will present the characterization of the electronic and optoelectronic properties of atomically thin p-n junctions consisting of vertically stacked WSe2 and MoS2 monolayers. We observed gate-tunable diode-like current rectification and a photovoltaic response across the p-n interface. Unlike conventional bulk p-n junctions, the tunneling-assisted interlayer recombination of the majority carriers is responsible for the tenability of the charge transport and the photovoltaic response. Furthermore, we will discuss the enhanced optoelectronic characteristics in graphene-sandwiched vdW p-n junctions.

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A Study on the Improvement of Efficiency by Scribing Transparent Conducting Oxide of Dye-sensitized Solar Cell (염료감응형 태양전지의 투명 전극 식각을 통한 효율 향상 연구)

  • Seo, Hyun-Woong;Son, Min-Kyu;Lee, Kyoung-Jun;Kim, Jeong-Hoon;Kim, Hee-Je
    • 한국신재생에너지학회:학술대회논문집
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    • 2008.05a
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    • pp.416-418
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    • 2008
  • Dye-sensitized solar cell using transparent conducting oxide as electrode has large resistance such as surface resistance, charge transportation impedance in counter electrode and electrolyte, impedance between each interface. Among that resistances, surface resistance of transparent conducting oxide is relatively large. So the change of transparency has a large effect on internal resistance of dye-sensitized solar cell. Consequently, that change cause to increase or decrease the conversion efficiency. We tried to reduce the surface resistance by laser-scribing. The active area is seperated from total transparent conducting oxide by Nd:YAG laser-scribing. As a result, we achieved the improvement of efficiency about 7% and 11% in case of $0.25cm^2$ and $1.00cm^2$ dye-sensitized solar cells.

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Charge Transport in Uniaxially Aligned Liquid-crystalline Polymer Transistors

  • Lee, Mi-Jeong;Chen, Zhuoying;Sirringhaus, H.;Lee, Jang-Sik
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.27.2-27.2
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    • 2011
  • Polymer electronics is the one of the most promising way to realize the flexible electronics and many studies made remarkable progress to achieve the improvement in performance of polymer electronics comparable to current silicon-based technology. PBTTT is conjugated semiconducting polymer with highly ordered, chain-extended crystalline microstructures and shows high field effect mobilities above 0.1 $cm^2/Vs$. We studied PBTTTs FETs phase and explored methods to control channel interface in various device structures. Especially, in PBTTTs' unique nano-ribbon phase, we could obtain high mobilities of up to 0.4 $cm^2/Vs$, which was not reached before. Alignment of PBTTTs film was carried out using zone casting and anisotropy of mobilities in parallel and perpendicular to the polymer chain direction was investigated. Optical anisotropy in aligned nano-ribbon PBTTT FETs was also studied using a polarized optical absorption.

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New hole mobility model including hole and lattice (정공과 격자의 온도를 고려한 새로운 정공 이동도 모델)

  • 김중식;김진양;김찬호;신형순;박영준;민홍식
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.8
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    • pp.31-37
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    • 1998
  • A new self-consistent hole mobility model that includes lattice and hole temeprature has been proposed. By including the lattice and hole temperatures as well as the effective transverse field and the interface fixed charge, the model predicted the saturation of hole drift velocity and showed the effects of coulomb scattering, surface phonon scattering, and surface roughness scattering. The calculated data by the model were compared with the reported experimental data and they were shown to agree quite well. The new model is expected to estimate the characteristics of very short channel devices in the in the hydrodynamic model simulation.

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Analysis of Insulating Reliability in Epoxy Composites using Weibull Distribution Equation (와이블 분포식을 이용한 에폭시 복합체의 절연 신뢰도 분석)

  • Park, No-Bong;Lim, Jung-Kwan;Park, Yong-Pil
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.05a
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    • pp.813-816
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    • 2003
  • The dielectric breakdown of epoxy composites used for transformers was experimented and then its data were applied to Weibull distribution probability. First of all, speaking of dielectric breakdown properties, the more hardener increased, the stronger breakdown strength became at low temperature because of cross-linked density by the virtue of ester radical. The breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised and the electric field is concentrated. In the case of filled specimens with treating silane, the breakdown strength become much higher. Finally, according to Weibull distribution analysis, reducing breakdown probability of equipment insulation lower than 0.1 % level requires the allowable field intensity values to be kept under 21.5 MV/cm.

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A Study on Development of Expert System for Collision Avoidance and Navigation(I): Basic Design

  • Jeong, Tae-Gwoen;Chen, Chao
    • Journal of Navigation and Port Research
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    • v.32 no.7
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    • pp.529-535
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    • 2008
  • As a method to reduce collision accidents of ships at sea, this paper suggests an expert system for collision avoidance and navigation (hereafter "ESCAN"). The ESCAN is designed and developed by using the theory and technology of expert system and based on the information provided by AIS and RADAR/ARPA system. In this paper the ESCAN is composed of four(4) components; Facts/Data Base in charge of preserving data from navigational equipment, Knowledge Base storing production rules of the ESCAN, Inference Engine deciding which rules are satisfied by facts or objects, User System Interface for communication between users and ESCAN. The ESCAN has the function of real--time analysis and judgment of various encountering situations between own ship and targets, and is to provide navigators with appropriate plans of collision avoidance and additional advice and recommendation This paper, as a basic study, is to introduce the basic design and function of ESCAN.

A study of monitoring and reconfiguration electronics design in space computer unit (위성컴퓨터의 감시 및 재구성 회로 설계에 관한 연구)

  • Cho, Young-Ho;Won, Joo-Ho;Choi, Jae-Dong;Yang, Koon-Ho
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1958_1959
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    • 2009
  • This paper describes an MRE(Monitoring and Reconfiguration Electronics) which is in charge of SCU(Spacecraft Computer Unit) hardware failure monitoring as well as of protecting the satellite against system failures. To achieve it, MRE is designed that it is an independent function with respect to the rest of the SCU, that is, care is taken into account in order to minimize the interface(the failure propagation) between the MRE and the other SCU functions.

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