• Advances in materials Research
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• v.1 no.2
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• pp.109-113
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• 2012

Electromigration-induced void evolutions in typical upper and lower layer dual-inlaid Copper (Cu) interconnect structures were simulated by applying a phenomenological model resorting to Monte Carlo based simulations, which considers redistribution of heterogeneously nucleated voids and/or pre-existing vacancy clusters at the Copper/dielectric cap interface during electromigration. The results indicate that this model can qualitatively explain the electromigration-induced void evolutions observations in many studies reported by several researchers heretofore. These findings warrant need to re-investigate technologically important electromigration mechanisms by developing rigorous models based on similar concepts.

• ETRI Journal
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• v.30 no.3
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• pp.403-411
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• 2008

This paper introduces an interconnect delay fault test (IDFT) controller on boards and system-on-chips (SoCs) with IEEE 1149.1 and IEEE 1500 wrappers. By capturing the transition signals launched during one system clock, interconnect delay faults operated by different system clocks can be simultaneously tested with our technique. The proposed IDFT technique does not require any modification on boundary scan cells. Instead, a small number of logic gates needs to be plugged around the test access port controller. The IDFT controller is compatible with the IEEE 1149.1 and IEEE 1500 standards. The superiority of our approach is verified by implementation of the controller with benchmark SoCs with IEEE 1500 wrapped cores.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.370-376
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• 2012

In this work, design considerations for high-performance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An $f_{-3dB}$ of 80 GHz at an operating voltage of 1 V was obtained.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.8
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• pp.1547-1554
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• 2011

As process parameters scale, interconnect width are reduced rapidly while the current flowing through interconnects does not decrease in a proportional manner. This effect increases current density in metal interconnects which may result in poor reliability. Since RMS(root-mean-square) current limits are used to evaluate self-heating and short-time stress failures caused by high-current pluses, RMS current estimation is very important to guarantee the reliability of semiconductor systems. Hence, it is critical to estimate the current limits through interconnects earlier in semiconductor design stages. The purpose of this paper is to propose a fast, yet accurate RMS current estimation technique that can offer a relatively precise estimate by using closed-form equations. The efficiency and accuracy of the proposed method have been verified through simulations using HSPICE for a vast range of interconnect parameters.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.02a
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• pp.37-59
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• 2004

In the case of Ni/Au finished pad on the package side, the solder joint of SnAgCu system can bring brittle fracture under impact load such as drop test. Therefore, it's difficult to prevent the brittle fracture of lead-free solder, by controlling Cu content. The failure locus existing on the interface between $(Ni,Cu)_3Sn_4\;and\;(Cu,Ni)_6Sn_5$ IMC layers must be changed to other site in order to avoid brittle fracture due to impact load. It was not found any clear evidence that there were two IMC layers exist. But it was strongly assumed these were two layers which have different Cu-Ni composition. From the above analysis it was assumed that Cu atom in the solder alloy or substrate seemed to affect IMC composition and cause to IMC brittle fracture.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.53-59
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• 2004

This paper proposes an efficient method for computing the 3-dimensional capacitance of complex structures. The proposed method is based on applying numerical 2-dimensional capacitance extraction formula for 3-dimensional interconnect models. This method improves the extraction efficiency 952 times while compromising the accuracy within 1.8 percentage of maximal relative error, compared with the results of Fastcap program for various 3-D models. The proposed method can be used efficiently to extract electrical parameters of on/off-chip interconnects in VLSI systems.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.69-77
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• 2004

An efficient board-level interconnect test algorithm is proposed considering both the ground bounce effect and the delay fault detection. The proposed algorithm is capable of IEEE 1149.1 interconnect test, negative ground bounce effect prevention, and also detects delay faults as well. The number of final test pattern set is not much different with the previous method, even our method enables to detect the delay faults in addition to the abilities the previous method guarantees.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1289-1295
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• 2004

In this paper, degradation in field-aged PV modules including degradation of interconnect, discoloration of encapsulant and hot spot have been observed and analyzed. From the results, photovoltaic module installed for 6 years shows around 16 % drop of electrical properties due to the interconnect degradation and PV module passed 18 years has been found to drop of around 20 % mainly by the encapsulant discoloration. Furthermore the difference between low and high temperature of PV array at hot spot goes up to 3$0^{\circ}C$ and it leads to interconnect degradation. On the other hands, the temperature difference was observed to be around 15$^{\circ}C$ at the encapsulant discoloration spot of PV array.

• Journal of IKEEE
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• v.22 no.2
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• pp.518-521
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• 2018

IVN (in-vehicle network) connects various electronic modules in the vehicles. It requires real-time, low noise, high reliability, and high flexibility. It includes CAN (controller area network), CAN-FD (CAN flexible data rate), FlexRay, LIN (local interconnect network), SENT (single edge nibble transmission), and PSI5 (peripheral sensor interface 5). In this paper, their operation priciples, target applications, and pros and cons are explained.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.7
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• pp.20-29
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• 1998

As the packing density of ICs in recent submicron IC design increases, interconnects gain importance. Because interconnects directly affect on two major components of circuit performance, power dissipation and operating speed, circuit engineers are concerned with the optimal design of interconnects and the aid tool to design them. When circuit models of interconnects are given (including geometry and material information), the analysis process for the given structure is not an easy task, but conversely, it is much more difficult to design an interconnect structure with given circuit characteristics. This paper focuses on the latter process that has not been foucsed on much till now due to the complexity of the problem, and prsents a design aid tool(DATOIS) to synthesize interconnects. this tool stroes the circuit performance parameters for normalized interconnect geometries, and has two oeprational modes:analysis mode and synthesis mode. In the analysis mode, circuit performance parameters are obtained by searching the internal database for a given geometry and interpolates results if necessary . In thesynthesis mode, when a given circuit performance parameter satisfies a set of geometry condition in the database, those geometry structures are printed out.