JSTS:Journal of Semiconductor Technology and Science

  • 제12권3호
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  • Pages.370-376
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  • 2012
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Process Considerations for 80-GHz High-Performance p-i-n Silicon Photodetector for Optical Interconnect

  • Cho, Seong-Jae (Department of Electrical Engineering, Stanford University) ;
  • Kim, Hyung-Jin (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University) ;
  • Sun, Min-Chul (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University) ;
  • Park, Byung-Gook (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University) ;
  • Harris, James S. Jr. (Department of Electrical Engineering, Stanford University)
  • 투고 : 2012.01.26
  • 발행 : 2012.09.30
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초록

In this work, design considerations for high-performance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An $f_{-3dB}$ of 80 GHz at an operating voltage of 1 V was obtained.

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참고문헌

  1. G. T. Reed and A. P. Knights, Silicon Photonics, pp. 132-149, John Wiley & Sons, Ltd., West Sussex, England, 2005.
  2. R. Chen, H. Lin, Y. Huo, C. Hitzman, T. I. Kamins, and J. S. Harris, "Increased photoluminescence of strain-reduced, high-Sn composition Ge1-xSnx alloys grown by molecular beam epitaxy," Appl. Phys. Lett., vol. 99, no. 18, 181125, Nov. 2011. https://doi.org/10.1063/1.3658632
  3. S. Cho, R. Chen, S. Koo, G. Shambat, H. Lin, N. Park, J. Vuckovic, T. I. Kamins, B.-G. Park, J. S. Harris, "Fabrication and Analysis of Epitaxially Grown $Ge_{1-x}Sn_x $ Microdisk Resonator with 20-nm Free-Spectral Range," IEEE Photonics Technol. Lett., vol. 23, no. 20, pp. 1535-1537, Oct. 2011. https://doi.org/10.1109/LPT.2011.2163929
  4. K.-Y. Park, W.-S. Oh, J.-C. Choi, and W.-Y. Choi, "Design of 260-Mb/s Low-Power Fiber Optic Transmitter and Receiver ICs for POF Applications," J. Semicond. Technol. Sci., vol. 11, no. 3, pp. 221-228, Sep. 2011. https://doi.org/10.5573/JSTS.2011.11.3.221
  5. S. N. Chattopadhyay, C. B. Overton, S. Vetter, M. Azadeh, B. H. Olson, and N. El Naga, "Optically Controlled Silicon MESFET Fabrication and Characterization for Optical Modulator/Demodulator," J. Semicond. Technol. Sci., vol. 10, no. 3, pp. 213-224, Sep. 2010. https://doi.org/10.5573/JSTS.2010.10.3.213
  6. J. Michel, J. Liu, and L. C. Kimerling, "High-Performance Ge-on-Si photodetectors," Nat. Photonics, vol. 4, pp. 527-534, Aug. 2010. https://doi.org/10.1038/nphoton.2010.157
  7. L. Vivien, M. Rouviere, J.-M. Fedeli, D. Marris- Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. E. Melhaoui, E. Cassan, X. L. Roux, D. Pascal, and S. Laval, "High speed high responsivity germanium photodetector integrated in a Silicon- On-Insulator microwaveguide," Opt. Express, vol. 15, no. 15, pp. 9843-9848, Jul. 2007. https://doi.org/10.1364/OE.15.009843
  8. T.-Y. Liow, K.-W. Ang, Q. Fang, J.-F. Song, Y.-Z. Xiong, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, "Silicon Modulators and Germanium Photodetectors on SOI: Monolithic Integration, Compatibility, and Performance Optimization," IEEE J. Sel. Top. Quantum Electron., vol. 16, no. 1, pp. 307-315, Feb. 2010. https://doi.org/10.1109/JSTQE.2009.2028657
  9. ATLAS User's Manual, SILVACO International, Oct. 2011.
  10. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices 3/e, pp. 671-682, Wiley-Interscience, New Jersey, USA, 2007.