• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.1
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• pp.61-71
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• 2003

Interconnect test for highly integrated environments like SoC, becomes more important as the complexity of a circuit increases. This importance is from two facts, test time and complete diagnosis. Since the interconnect test between IPs is based on the scan technology such as IEEE1149.1 and IEEE P1500, it takes long test time to apply test vectors serially through a long scan chain. Complete diagnosis is another important issue because a defect on interconnects are shown as a defect on a chip. But generally, interconnect test algorithms that need the short test time can not do complete diagnosis and algorithms that perform complete diagnosis need long test time. A new interconnect test algorithm is developed. The new algorithm can provide a complete diagnosis for all faults with shorter test length compared to the previous algorithms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.123-124
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• 2005

We investigated the effect of a Ta/TaN Cu diffusion barrier existence on the reliability and the electrical performance of Cu dual-damascene interconnects. A high EM performance in Cu dual-damascene structure was observed the BCV(barrier contact via) interconnect structure to remain Ta/TaN barrier layer. Via resistance was decreased DCV interconnect structure by bottomless process. This structure considers that DCV interconnect structure has lower activation energy and higher current density than BCV interconnect structure. The EM failures by BCV via structure were formed at via hole, but DCV via structure was formed EM fail at the D2 line. In order to improve the EM characteristic of DCV interconnect structure by bottomless process, after Ta/TaN diffusion barrier layer in via bottom is removed by Ar+ resputtering process, it is desirable that Ta thickness is thickly made by Ta flash process.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.9-14
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• 2012

Robust power delivery and distribution are considered one of the major challenges in electronic devices today. As a technology develops (i.e. frequency and complexity, increase and size decreases), both power density and power supply noise increase, and voltage supply margin decreases. In addition, thermal problem is induced due to high power and poor power distribution. Until now most of studies to improve power delivery and distribution have been focused on device circuit or system architecture designs. Interconnect process technologies to resolve power delivery issues have not greatly been explored so far, but recently it becomes of great interest as power increases and voltage specification decreases in a smaller chip size.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.7 s.337
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• pp.37-44
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• 2005

This paper presents effective test patterns and their BIST implementations for SoC and Board interconnects. Initially '6n'algorithm, where 'n' is the total number of interconnect nets, is introduced to completely detect and diagnose both static and crosstalk faults. Then, more economic 4n+1 algorithm is described to perfectly capture the crosstalk faults for the interconnect nets separated within a certain distance. It will be shown that both algorithms can be easily implemented as interconnect BIST hardwares with small area penalty than conventional LFSR.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1740-1745
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• 2004

A simplified resistor network model for electrical and mass transport in anode-supported planar solid oxide fuel cell (SOFC) was constructed in order to investigate the effect of interconnect rib geometry on the cell performance. For accurate potential calculation, activation and concentration over-potentials at the electrode/electrolyte interfaces were fully considered in this calculation. When contact resistance was not considered, the optimum interconnect rib length were calculated to be $0.1{\sim}0.2$ mm for 2 mm half unit cell for given operation conditions and properties. However, with realistic contact resistance, the interconnect rib length should be increased to provide larger contact area and thus to obtain better performance.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.8
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• pp.1406-1415
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• 2010

As process technology for semiconductor goes beyond the ultra-deep submicrometer regime, interconnect reliability on a chip has become a serious design concern. As process parameters scale, interconnect widths are reduced rapidly while the current flowing through the interconnect does not decrease in a proportional manner. This trend increases current densities in metal interconnects which may lead to poor reliability for electromigration. Hence, it is critical to estimate the current amount passing through the interconnects earlier in semiconductor design stages. The purpose of this paper is to propose a fast yet accurate current estimation technique that can offer not only analysis time equivalent to those offered by the previous approximation methods but also a relatively precise estimation by using closed-form equations. The accuracy of the proposed technique was confirmed to be about 8 times better on average when compared to the previous work.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.40-42
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• 2002

Electromigration is atomic diffusion driven by a momentum transfer from conducting electrons. With every new generation of intergrated circuits, interconnect line widths have been reduced and current densities in the interconnect have become higher. This leads to an increase in the threat to interconnect reliability due to electromigration. In this paper, we simulated stress evolution with changing temperature, duty factor(ratio of on time and pulse time), frequency under pulsed DC condition. As a result, we predict MTF(median time to failure) and found that exponent n is affected by changing temperature, duty factor.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.50-56
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• 2000

The integrated circuit interconnection lines are experimented with patterned ground shields (PGS) at microwave frequencies. Measurement results demonstrate that the PGS can significantly reduce the power loss through the interconnect lines over wide frequency ranges as the PGS shields the lossy silicon substrate. The transmission line characteristics of the PGS interconnect lines are analyzed and identified that the PGS reduces the wave length of the interconnect line.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.12
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• pp.59-68
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• 1999

The timing characteristics of an ASIC are analyzed based on the propagation delays of each gate and interconnect wire. The gate delay can be modeled using the two-dimensional delay table whose index variables are the input transition time and the output load capacitance. The AWE technique can be adopted as an algorithm to compute the interconnect delay. Since these delays are affected by the interaction to the two-dimensional delay table and the AWE technique. A method to model this effect has been proposed through the effective capacitance and the gate driver model under the assumption of single driving gate. This paper presents a new technique to handle the multiple CMOS gates driving interconnect wire by extending previous approach. This technique has been implemented in C language and applied to several interconnect circuits driven by multiple CMOS gates. In most cases, we found a few tens of speed-up and only a few percents of errors in computing both of gate and interconnect delays, compared to SPICE.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.67-75
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• 1998

This paper examined the geometrical variables of microstrip to control the characteristic impedance of MCM interconnect and also with respect to the practical requirements, evaluated the critical lengths for attenuation, propagation delay, and crosstalk at 500 MHz frequency compared to at 50 MHz frequency. With the illustration of each MCM-L and MCM-D interconnect having 50 characteristic impedance, it was revealed that the most important geometrical variables to control the characteristic impedance of microstrip are eventually dielectric thickness and line width. In particular, the dielectric thickness of MCM-D interconnect must be controlled with tolerance below 2 m. It is clear that the attenuation does not give rise to signal distortion in the range of up to 500MHz frequency for both MCM-L and MCM-D interconnects. However, the propagation delay is so significant that both MCM-L and MCM-D interconnects should be matched with load at the 500 MHz frequency. For the MCM-D interconnect, the crosstalk voltage would not be high to generate the wrong signal on the neighboring line at 500 MHz frequency, but the MCM-L interconnect could not be used due to severe crosstalk. Eventually, it is clear that the transmission line behavior must be studied for the design of MCM substrate at the 500 MHz frequency.