• 한국광학회지
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• 제18권1호
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• pp.50-55
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• 2007

본 연구에서는 광통신 시스템에 있어서 필수적인 기능으로 전망되고 있는 전광 논리소자를 구현하기 위한 집적된 광소자를 제작, 측정 하였다. 유기금속화학증착법(MOCVD)을 이용한 선택영역 성장기술을 이용하여 서로 다른 두 활성영역을 한 기판위에 성장함으로써 능동 반도체 광소자인 반도체 광증폭기와 수동 반도체 광소자인 다중모드 간섭 도파로, S-자 도파로를 집적하였다. 집적된 수동 소자부분의 손실을 측정하고 전광 논리소자를 구현하는 방법 중 하나인 반도체 광증폭기의 cross-gain modulation(XGM)특성을 측정하여 집적된 전광 논리소자로의 사용 가능성을 알아보았다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.452-455
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• 2002

We demonstrate the wide-viewing characteristics of a twisted nematic liquid crystal display (LCD) with self-formed micro-domains through the topographical alignment and fringe field effects of dielectric surface gratings (DSG). The mutual optical compensation between micro-domains within each pixel eliminates the contrast inversion phenomenon of TN mode without complex surface treatments.

• 한국광학회지
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• 제14권2호
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• pp.135-141
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• 2003

양의 열광학 계수를 갖는 실리카를 하부클래드 및 코아에 그리고 음의 열광학 계수를 갖는 폴리머를 상부클래드에 적용한 AWG(Arrayed Waveguide Grating) 파장분할 다중화 소자에 대하여 이차원 스칼라 유한차분법(Scalar Finite Difference Method; SFDM)으로 온도의존 특성을 분석한 결과, 클래드의 굴절률을 변화시키거나 실리카 코어 상부에 실리카 박막이 존재하는 구조에서 박막의 두께를 변화시켜 온도의존 특성을 조절할 수 있음을 확인하였다. 이러한 해석결과에 근거하여 폴리머 상부클래드가 적용된 AWG 소자를 제작하였으며 기존의 실리카 AWG 소자와 특성을 비교분석하였다. 폴리머 상부클래드의 도입에 의해 삽입손실 및 크로스톡은 큰 변화가 없었으나 중심파장의 온도의존성은 0.0130 nm/$^{\circ}C$에서 0.0028 nm/$^{\circ}C$ 수준으로 감소하였다.

• 한국광학회:학술대회논문집
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• 한국광학회 1990년도 광학 및 양자전자학 워크샵
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• pp.22-25
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• 1990

• Applied Science and Convergence Technology
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• 제25권1호
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• pp.7-14
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• 2016

Nanoplasmonics is a developing field that offers attractive optical, electrical, and thermal properties for a wide range of potential applications. Based on the compelling characteristics of this field, researchers have shed light on the possibilities of integrated photonics and biosensing platforms using nanoplasmonic principles. Single and unique nanostructures with plasmons can act as individual transducers that convert desired information into measurable and readable signals. In this review, we will discuss nanoplasmonic sensors, especially those in relation to photodetectors for future optical interconnects, and bioinformation sensing platforms based on nanoplasmonics, thus providing a viable approach by which to create sensors corresponding to target applications. In addition, we also discuss scalable fabrication processes for the creation of unconventional nanoplasmonic devices, which will enable next-generation plasmonic devices for wearable, flexible, and biocompatible systems.

• Current Optics and Photonics
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• 제1권3호
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• pp.214-220
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• 2017

A wavelength filter based on a polymer Bragg reflector has received much attention due to its simple structure and wide tuning range. Tilted Bragg gratings and asymmetric Y-branches are integrated to extract the reflected optical signals in different directions. To optimize device performance, design procedures are thoroughly considered and various design parameters are applied to fabricated devices. An asymmetric Y-branch with an angle of $0.3^{\circ}$ produced crosstalk less than -25 dB, and the even-odd mode coupling was optimized for a grating tilt angle of $2.5^{\circ}$, which closely followed the design results. Through this experiment, it was confirmed that this device has a large manufacturing tolerance, which is important for mass production of this optical device.

• 전자통신동향분석
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• 제32권6호
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• pp.8-16
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• 2017

In this paper, we review studies attempting to triumph over the limitation of Si-based semiconductor technologies through a heterogeneous integration of high mobility compound semiconductors on a Si substrate, and the co-integration of electronic and/or optical devices. Many studies have been conducted on the heterogeneous integration of various materials to overcome the Si semiconductor performance and obtain multi-purpose functional devices. On the other hand, many research groups have invented device fusion technologies of electrical and optical devices on a Si substrate. They have co-integrated Si-based CMOS and InGaAs-based optical devices, and Ge-based electrical and optical devices. In addition, chip and wafer bonding techniques through TSV and TOV have been introduced for the co-integration of electrical and optical devices. Such intensive studies will continue to overcome the device-scaling limitation and short-channel effects of a MOS transistor that Si devices have faced using a heterogeneous integration of Si and a high mobility compound semiconductor on the same chip and/or wafer.

• Current Optics and Photonics
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• 제3권5호
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• pp.401-407
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• 2019

Polymeric optical waveguide devices with Bragg gratings have been investigated, for implementing tunable lasers and wavelength filters used in wavelength-division-multiplexed optical communication systems. Owing to the excellent thermo-optic effect of these polymers, wavelength tuning is possible over a wide range, which is difficult to achieve using other optical materials. In this study the phase-mask technology, which has advantages over the conventional interferometeric method, was introduced to facilitate the fabrication of Bragg gratings in polymeric optical waveguide devices. An optical setup capable of fabricating multiple Bragg gratings simultaneously on a 4-inch silicon wafer was constructed, using a 442-nm laser and phase mask. During fabrication, some of the diffracted light in the phase mask was totally reflected inside the mask, which affected the quality of the Bragg grating adversely, so experiments were conducted to solve this issue. To verify grating uniformity, two types of wavelength-filtering devices were fabricated using the phase-mask lithography, and their reflection and transmission spectra were measured. From the results, we confirmed that the phase-mask method provides good uniformity, and may be applied for mass production of polymer Bragg-grating waveguide devices.

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 제12회 정기총회 및 01년도 동계학술발표회
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• pp.34-35
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• 2001

The wavelength demultiplexer is an essential component in optical transmission systems using wavelength-division multiplexing(WDM), which can increase the number of channels and information capacity of optical fibers. For optical telecommunication, much attention has been given to demultiplexing two wavelengths in the 1.3${\mu}{\textrm}{m}$ of low dispersion band and 1.55${\mu}{\textrm}{m}$ of low loss window. Various integrated-optical devices have been proposed to perform this function, including conventional directional couplers, asymmetric Y-branching devices, asymmetric Mach-Zehnder interferometers and two-mode interference devices. (omitted)

• 한국광학회지
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• 제14권5호
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• pp.509-514
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• 2003

SOA(Semiconductor Optical Amplifier)를 단일 기판에 집적한 Mach-Zehnder 간섭계 구조의 파장변환기를 제작하여 40 nm 지역폭에 대한 10 Gb/s 파장변환 특성을 조사하였다. 제작된 파장변환기는 BRS(Buried Ridge Structure)형 SOA와 수동 도파로를 butt-joint결합하여 단일 집적한 구조이다. 집적화 과정에서 높은 도파 손실을 발생시키는 p+ InP덮개층을 제거하고 무첨가 InP로 도파로 덮개층 및 전류 차단층을 동시에 형성시키는 새로운 방법을 이용하였고, 모듈 제작에서 경사진 도파로와 광섬유를 효율적으로 광 접속하기 위하여 경사진 광섬유 배열을 제작하여 사용하였다. 이와 같이 제작된 파장변환기 모듈을 이용하여 1535-1575 nm의 40 nm 대역폭에서 1 ㏈ 이하의 power penalty를 갖는 10 Gb/s 파장변환을 구현하였고, 특히 negative penalty를 갖는 파장변환을 성공적으로 구현함으로써 2R(re-amplification, re-shaping) 기능을 제공할 수 있음을 보였다.