• Korean Journal of Optics and Photonics
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• v.18 no.1
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• pp.50-55
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• 2007

Using the Selective Area Growth (SAG) technology of Metal Organic Chemical Vapor Deposition (MOCVD), we successfully integrated an active device and passive devices on the same substrate. In other words, we integrated a Semiconductor Optical Amplifier (SOA) as an active device and an S-bend waveguide and a Multi Mode Interference (MMI) waveguide as passive devices. The SOA is successfully integrated with passive devices on the same substrate. The Cross-Gain Modulation (XGM) characteristic of the integrated SOA and the loss of an MMI and an S-bend waveguide were measured. Measured XGM characteristics of the SOA showed an extinction ratio of 8.82 dB. The total loss of the MMI and S-bend waveguide was 18 dB.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.452-455
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• 2002

We demonstrate the wide-viewing characteristics of a twisted nematic liquid crystal display (LCD) with self-formed micro-domains through the topographical alignment and fringe field effects of dielectric surface gratings (DSG). The mutual optical compensation between micro-domains within each pixel eliminates the contrast inversion phenomenon of TN mode without complex surface treatments.

• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.135-141
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• 2003

In arrayed waveguide grating (AWG) devices whose waveguides were composed of polymer with negative thermo-optic coefficient as overcladding, and silica with positive thermo-optic coefficient as both core and undercladding, we investigated the temperature dependence of the central wavelength using two-dimensional SFDM. From these results, it was confirmed that the temperature dependence can be nearly eliminated by adjusting the refractive index of the cladding and the thickness of the silica thin film upper-loaded on the core. Based on the numerical calculations, the AWG device with polymer overcladding was fabricated. and its optical characteristics were compared with those of the orginal silica AWG device. The introduction of polymer overcladding decreased the temperature dependence of the central wavelength from 0.0130 nm/$^{\circ}C$ to 0.0028 nm/$^{\circ}C$ without deteriorating the insertion loss and crosstalk characteristics.

• Proceedings of the Optical Society of Korea Conference
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• 1990.07a
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• pp.22-25
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• 1990

• Applied Science and Convergence Technology
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• v.25 no.1
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• pp.7-14
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• 2016

Nanoplasmonics is a developing field that offers attractive optical, electrical, and thermal properties for a wide range of potential applications. Based on the compelling characteristics of this field, researchers have shed light on the possibilities of integrated photonics and biosensing platforms using nanoplasmonic principles. Single and unique nanostructures with plasmons can act as individual transducers that convert desired information into measurable and readable signals. In this review, we will discuss nanoplasmonic sensors, especially those in relation to photodetectors for future optical interconnects, and bioinformation sensing platforms based on nanoplasmonics, thus providing a viable approach by which to create sensors corresponding to target applications. In addition, we also discuss scalable fabrication processes for the creation of unconventional nanoplasmonic devices, which will enable next-generation plasmonic devices for wearable, flexible, and biocompatible systems.

• Current Optics and Photonics
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• v.1 no.3
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• pp.214-220
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• 2017

A wavelength filter based on a polymer Bragg reflector has received much attention due to its simple structure and wide tuning range. Tilted Bragg gratings and asymmetric Y-branches are integrated to extract the reflected optical signals in different directions. To optimize device performance, design procedures are thoroughly considered and various design parameters are applied to fabricated devices. An asymmetric Y-branch with an angle of $0.3^{\circ}$ produced crosstalk less than -25 dB, and the even-odd mode coupling was optimized for a grating tilt angle of $2.5^{\circ}$, which closely followed the design results. Through this experiment, it was confirmed that this device has a large manufacturing tolerance, which is important for mass production of this optical device.

• Electronics and Telecommunications Trends
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• v.32 no.6
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• pp.8-16
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• 2017

In this paper, we review studies attempting to triumph over the limitation of Si-based semiconductor technologies through a heterogeneous integration of high mobility compound semiconductors on a Si substrate, and the co-integration of electronic and/or optical devices. Many studies have been conducted on the heterogeneous integration of various materials to overcome the Si semiconductor performance and obtain multi-purpose functional devices. On the other hand, many research groups have invented device fusion technologies of electrical and optical devices on a Si substrate. They have co-integrated Si-based CMOS and InGaAs-based optical devices, and Ge-based electrical and optical devices. In addition, chip and wafer bonding techniques through TSV and TOV have been introduced for the co-integration of electrical and optical devices. Such intensive studies will continue to overcome the device-scaling limitation and short-channel effects of a MOS transistor that Si devices have faced using a heterogeneous integration of Si and a high mobility compound semiconductor on the same chip and/or wafer.

• Current Optics and Photonics
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• v.3 no.5
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• pp.401-407
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• 2019

Polymeric optical waveguide devices with Bragg gratings have been investigated, for implementing tunable lasers and wavelength filters used in wavelength-division-multiplexed optical communication systems. Owing to the excellent thermo-optic effect of these polymers, wavelength tuning is possible over a wide range, which is difficult to achieve using other optical materials. In this study the phase-mask technology, which has advantages over the conventional interferometeric method, was introduced to facilitate the fabrication of Bragg gratings in polymeric optical waveguide devices. An optical setup capable of fabricating multiple Bragg gratings simultaneously on a 4-inch silicon wafer was constructed, using a 442-nm laser and phase mask. During fabrication, some of the diffracted light in the phase mask was totally reflected inside the mask, which affected the quality of the Bragg grating adversely, so experiments were conducted to solve this issue. To verify grating uniformity, two types of wavelength-filtering devices were fabricated using the phase-mask lithography, and their reflection and transmission spectra were measured. From the results, we confirmed that the phase-mask method provides good uniformity, and may be applied for mass production of polymer Bragg-grating waveguide devices.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.34-35
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• 2001

The wavelength demultiplexer is an essential component in optical transmission systems using wavelength-division multiplexing(WDM), which can increase the number of channels and information capacity of optical fibers. For optical telecommunication, much attention has been given to demultiplexing two wavelengths in the 1.3${\mu}{\textrm}{m}$ of low dispersion band and 1.55${\mu}{\textrm}{m}$ of low loss window. Various integrated-optical devices have been proposed to perform this function, including conventional directional couplers, asymmetric Y-branching devices, asymmetric Mach-Zehnder interferometers and two-mode interference devices. (omitted)

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.509-514
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• 2003

Mach-Zehnder interferometric wavelength converters with monolithically integrated semiconductor optical amplifiers (SOA's) have been fabricated and characteristics of wavelength conversion at 10 Gb/s have been investigated for wavelength span of 40 nm. The devices have been achieved by using a butt-joint combination of buried ridge structure type SOA's and passive waveguides. In the integration, a new method has been applied that removes p+InP cladding layer leading to high propagation loss and forms simultaneously the current blocking and the cladding layer using undoped InP. The module packaging has been achieved by using a titled fiber array for effective coupling into the tilted waveguide in the wavelength converter. Using the module, wavelength conversion with power penalty lower than 1 ㏈ at 10 Gb/s has been demonstrated for wavelength span of 40 nm. In addition, it is show that the module can provide 2R (re-amplification, re-shaping) operation by demonstrating the conversion with the negative penalty.