• Textile Coloration and Finishing
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• v.20 no.4
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• pp.1-7
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• 2008

Methacryloxypropyl trimethoxysilane (MAPTMS), a hybrid organic-inorganic monomer, was photografted onto PET fabric using benzophenone (BP) as a photoinitiator. It was found that a UV energy of 43.2J/$cm^2$ was required to optimally photograft the MAPTMS onto PET fabrics which was applied with an aqueous formulation of 10% MAPTMS, 20% BP and 0.5% N-Methyldiethanol amine (MDEA). The MDEA additive was efficient in reducing atmospheric oxygen inhibition of polymer radicals which eliminated compulsory nitrogen inerting. The surface grafting of PET fabrics was verified by fourier transform infrared spectroscopy (FT-IR) and scanning electron spectroscopy (SEM). The grafted PET fabrics with the hybrid monomer showed higher thermal stability due to the introduced silane component in the monomer as ascertained by higher char content at 800$^{\circ}C$, which increased to 14.5% for the 15.8% grafting compared to 8.2% for the untreated.

• Bulletin of the Korean Chemical Society
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• v.27 no.10
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• pp.1587-1592
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• 2006

We report the preparation, structure and magnetic properties of a new pillared complex, copper(II) hydroxy-1,4-butanedisulfonate, $Cu_2(OH)_3(O_3SC_4H_8SO_3)_{1/2}$. The titled compound was obtained by anion exchange, using copper hydroxyl nitrate $(Cu_2(OH)_3NO_3)$ as the starting material. According to the XRD data, this compound exhibits a pillared layered structure with organic layers tilted between the copper hydroxide layers with a tilt angle of $21.8^{\circ}$. FTIR spectroscopy confirms total exchange of nitrate by the sulfonate and indicates that the sulfonate functions are linked to the copper(II) ions with each aliphatic chain bridging the adjacent hydroxide layers. According to the dc and ac magnetic measurements, the title compound is a metamagnet consisting of spin-canted antiferromagnetic layers, with a Neel temperature of 11.8 K.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.115.1-115.1
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• 2016

Electrochemical anodization has been interested due to its useful way for the nano-scale architecture of metal oxides obtained from a metal substrate. By using this method, it is easy to control the morphology of the oxide materials by controlling electrochemical conditions. Among oxide materials obtained from the transition metals such as Ti, V, W, etc., in this paper, the morphological study of anodized $TiO_2$ was employed at various voltage conditions in fluoric based electrolyte, and the effects of applied voltage (sweep rate and retention time) on the tube morphologies were investigated. Furthermore, by using anodization of tungsten substrate (W), we fabricated the porous structure of $WO_3$ and provided merits of tailored structure for the hybridization of inorganic and organic materials as electrochromic (EC) applications. The hybrid porous $WO_3$ shows multi-chromic properties during the EC reactions at specific voltage conditions. From these results, the anodization process with tailoring nano-structure is one of the promising methods for EC applications.

• ETRI Journal
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• v.36 no.5
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• pp.847-855
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• 2014

We developed a highly refractive index planarization layer showing a very smooth surface for organic light-emitting diode (OLED) light extraction, and we successfully prepared a highly efficient white OLED device with an embossed nano-structure and highly refractive index planarization layers. White OLEDs act as an internal out-coupling layer. We used a spin-coating method and two types of $TiO_2$ solutions for a planarization of the embossed nano-structure on a glass substrate. The first $TiO_2$ solution was $TiO_2$ sol, which consists of $TiO_2$ colloidal particles in an acidic aqueous solution and several organic additives. The second solution was an organic and inorganic hybrid solution of $TiO_2$. The surface roughness ($R_a$) and refractive index of the $TiO_2$ planarization films on a flat glass were 0.4 nm and 2.0 at 550 nm, respectively. The J-V characteristics of the OLED including the embossed nano-structure and the $TiO_2$ planarization film were almost the same as those of an OLED with a flat glass, and the luminous efficacy of the aforementioned OLED was enhanced by 34% compared to that of an OLED with a flat glass.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.3 s.357
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• pp.1-5
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• 2007

SiOC films were made using the oxygen and bistrimethylsilylmethane mixed precursor. The chemical properties of SiOC films divided into three properties, organic, hybrid and inorganic depending on the flow rate ratio between oxygen and bistrimethylsilylmethane precursor. The films with organic properties decreased dielectric constant, because of pore incorporation in final materials. In this study, the porosity of SiOC films with organic properties was investigated using the Makwell-Garnett equation. The porosity of the films could be correlated with the blue shift in the infrared spectra scopy, and increased with the decreasing the dielectric constant of the film.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.19-26
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• 2017

The cure properties of ethoxysilyl bisphenol A type epoxy resin (Ethoxysilyl-DGEBA) systems with different hardeners were investigated, comparing with DGEBA and Diallyl-DGEBA epoxy resin systems. The cure kinetics of these systems were analyzed by differential scanning calorimetry with an isothermal approach, and the kinetic parameters of all systems were reported in generalized kinetic equations with diffusion effects. The Ethoxysilyl-DGEBA epoxy resin system showed lower cure conversion rates than DGEBA and Diallyl-DGEBA epoxy resin systems. The conversion rates of these epoxy resin systems with DDM hardener are lower than those with HF-1M hardener. It can be considered that the optimum hardener for Ethoxysilyl-DGEBA epoxy resin system is Phenol Novolac type. These lower cure conversion rates in the Ethoxysilyl-DGEBA epoxy resin systems could be explained by the retardation of reaction molecule movements according to the formation of organic-inorganic hybrid network structure by epoxy and ethoxysilyl group in Ethoxysilyl- DGEBA epoxy resin system.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.79-84
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• 2017

The solar cells should be protected from the moisture and oxygen in order to sustain the properties and reliability of the devices. In this research, we prepared the protection films on the flexible plastic substrates by spray coating method using organic-inorganic hybrid solutions. The protection characteristics were studied depending on the various process conditions (nozzle distance, thicknesses of the coatings, film structures). The organic-inorganic solutions for the protection film layer were synthesized by addition of $Al_2O_3$ ($P.S+Al_2O_3$) and $SiO_2$ ($P.S+SiO_2$) nano-powders into PVA (polyvinyl alcohol) and SA (sodium alginate) (P.S) organic solution. The optical transmittances of the protection film with the thicknesses of $5{\mu}m$ showed 91%. The optical transmittance decreased from 81.6% to 73.6% with the film thickness increased from $78{\mu}m$ to $178{\mu}m$. In addition, the protective films were prepared on the PEN (polyethylene naphthalate), PC (polycarbonate) single plastic substrates as well as the Acrylate film coated on PC substrate (Acrylate film/PC double layer), and $Al_2O_3$ film coated on PEN substrate ($Al_2O_3$ film/PEN double layer) using the $P.S+Al_2O_3$ organic-inorganic hybrid solutions. The optimum protection film structure was studied by means of the measurements of water vapor transmittance rate (WVTR) and surface morphology. The protective film on PEN/$Al_2O_3$ double layer substrate showed the best water protective property, indicating the WVTR value of $0.004gm/m^2-day$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.78-80
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• 2006

The hybrid thin-film (HTF) passivation layer composed of the Ultra Violet (UV) curable acrylate layer and MS-31 (MgO:$SiO_2$=3:1wt%) layer was adopted in organic light emitting device (OLEO) to protect organic light emitting materials from penetrations of oxygen and water vapors. The results showed that the HTF layer possessed a very low WVTR value of lower than $0.007gm/m^{2+}day$ at $37.8^{\circ}C$ and 100% RH. This value was within the limited range of the sensitivity of WVTR measurements. And the lifetime of the HTF passivated device became almost three times longer than that of the bare device. The HTF on the OLEO was found to be very effective in protect what from the penetrations of oxygen and moisture.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.477-480
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• 2002

Si-O-C(-H) thin film with a tow dielectric constant were deposited on a P-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Bis-trimethylsilymethane (BTMSM, H$_{9}$C$_3$-Si-CH$_2$-Si-C$_3$H$_{9}$) and oxygen gas were used as Precursor. Hybrid type Si-O-C(-H) thin films with organic material have been generated many voids after annealing. Consequently, the Si-O-C(-H) films can be made a low dielectric material by the effect of void. The surface characterization of Si-O-C(-H) thin films were performed by SEM(scanning electron microscope). The characteristic analysis of Si-O-C(-H) thin films were performed by X-ray photoelectron spectroscopy (XPS).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.479-479
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• 2011

Flexible inverters based on complementary thin-film transistor (CTFTs) are important because they have low power consumption and other advantages over single type TFT inverters. In addition, integrated CTFTs in flexible electronic circuits on low-cost, large area and mechanically flexible substrates have potentials in various applications such as radio-frequency identification tags (RFIDs), sensors, and backplanes for flexible displays. In this work, we introduce flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The CTFTs were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. Basic electrical characteristics of individual transistors and the whole CTFTs were measured by a semiconductor parameter analyzer (HP4145B, Agilent Technologies) at room temperature in the dark. Performance of those devices then was measured under static and dynamic mechanical deformation. Effects of cyclic bending were also examined. The voltage transfer characteristics (Vout- Vin) and voltage gain (-dVout/dVin) of flexible inverter circuit were analyzed and the effects of mechanical bending will be discussed in detail.