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Correlation between the dielectric constant and porosity due to the nano pore in the thin film  

Oh, Teresa (School of Electronic and Information Engineering, Cheongju University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.44, no.3, 2007 , pp. 1-5 More about this Journal
Abstract
SiOC films were made using the oxygen and bistrimethylsilylmethane mixed precursor. The chemical properties of SiOC films divided into three properties, organic, hybrid and inorganic depending on the flow rate ratio between oxygen and bistrimethylsilylmethane precursor. The films with organic properties decreased dielectric constant, because of pore incorporation in final materials. In this study, the porosity of SiOC films with organic properties was investigated using the Makwell-Garnett equation. The porosity of the films could be correlated with the blue shift in the infrared spectra scopy, and increased with the decreasing the dielectric constant of the film.
Keywords
SiOC 절연막;절연상수;기공율;열처리;화학적 이동;
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Times Cited By KSCI : 1  (Citation Analysis)
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1 K. S. OH, S. Y. JING, C. K. Choi, K. M. Lee and H. J. Lee, 'Formation and caracteristic of fluorinated amorphous carbon films deposited by CF4/CH4 ICPCVD,' Journal of the Korean Physical Society, vol. 39, no. 2, pp. 291-295, 2001
2 G. Galli and R. M. Martin, 'Structural and electronic properties of amorphous carbon,' Phys. Rev. Lett. vol. 62, no. 5, pp. 555-558, 1999   DOI   ScienceOn
3 T. Oh, H. S. Kim, S. B. Oh and M. S. Won, 'The Chemical Shift According To The flow Rate Ratio O2/BTMSM by FTIR and XPS,' Jpn. J. Appl. Phys. vol. 42, pp. 6292-6295, 2003   DOI
4 J. H. Yun, E. S. Choi, C. M. Jang and C. S. Lee, 'Effect of post-treatments on atomic layer deposition of TiN thin films using tetrakis (dimethylamido) titanium and ammonia,' Jpn. J. Appl. Phys. vol. 41, pp. L418-L421, 2002   DOI
5 오데레사 '탄소밀도의 변화가 SiOC 박막의 결합 구조에 미치는 영향,' 대한전자공학회, vol. 43, pp. 322-327, May. 2006   과학기술학회마을
6 P. Masri, 'Silicon carbide and silicon carbide -based structures,' The physics of epitaxy, Surface science reports, vol. 48, pp. 1-5, 2002   DOI   ScienceOn
7 H. J. Kim, Q. Shao and Y. H. Kim, 'Characterizaion of low-dielectric-constant SiOC thin films deposited by PECVD for interlayer dielectrics of multilevel interconnection,' Surface and Coatings Technology, vol. 171, pp. 39-45, 2003   DOI
8 A. Grill and D. A. Neumayer, 'Structure of low dielectric constant to extreme low dielectric constant SIOCH films: Fourier transform infrared spectroscopy characterization,' J. Appl. Phys. vol. 94, pp. 6697-6707, 2003   DOI   ScienceOn
9 M. A. Tamor, C. H. Wu, R. O Carter and N. E. Lindsay, 'Pendant benzene in hydrogenated diamond-link carbon,' Appl. Phys. Lett. vol. 55, no. 14, pp. 1388-1390, 1999
10 T. Oh, K. M. Lee, S. T. Ko, K. S. Kim, K. J. Ahn and C. K. Choi, ' Bonding Structure of the Cross-link in Organosilicate Films Using O2/BTMSM Precursors,' Jpn. J. Appl. Phys. vol. 42, pp.1517-1520, 2003   DOI