• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.4
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• pp.182-186
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• 2003

The photovoltaic industry has been forced to lower the production cost in many ways. Ingot preparation technology is growing rapidly toward large-scale production. Multicrystalline silicon ingot of 69 cm square cross section, 240kg has been produced with fully automated equipment. During solidification, heat has been extracted from the bottom of the crucible through the graphite pedestal moving downward. The characteristics of the large ingot grown in this method are found to be uniform structurally and electrically.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.05a
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• pp.43-45
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• 2008

According to industrial development, Ingots are more large and various. In particular large STS ingot. The probability of shrinkage cavity occurrence is higher than carbon steel and alloy steel. To manufacture ultra clean steel the technical development is nearly necessary for example controlling inclusions and total [H]. In this study, after measured the mold temperature and adjusted thermo conductivity of STS steel and compared existing mold to new one with CAE. As a result, the new mold more reduced than existing mold for the probability of shrinkage cavity occurrence.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2018.05a
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• pp.51-52
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• 2018

Selective oxidation of RE elements from the U/RE metal ingot was studied in this paper using electrochemical process. Constant potential of -1.7V was applied between anode and cathode, where the potential value corresponds to standard potentials between actinide and rare earth materials. When the current values approached to nearly 0 mA, the reaction was finished. It is confirmed from the EPMA analysis that only U part of the U/RE ingot was remained. The metal recovered to the zinc cathode was obtained through the distillation process and it is being chemically analyzed in the KAERI analytical laboratory.

• Journal of Aerospace System Engineering
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• v.16 no.5
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• pp.57-61
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• 2022

The various GaAs panel are applied widening for aircraft and aerospace structures. This study presented technology for the growth of large-diameter GaAs ingots greater than 4 inches through numerical analysis using temperature control technology. In this work, proposes manufacturing technology adapted to various temperature and environmental changes through temperature simulation. With the development of ingot technology, the possibility of future application increased by obtaining expected results with minor deviation.

• Journal of the Korean Society of Propulsion Engineers
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• v.19 no.3
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• pp.83-88
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• 2015

Coating materials used in the electron beam (EB) deposition method, which is being studied as one of the fabrication methods of thermal barrier coating, are exposed to high power electron beam at focused area during the EB deposition. Therefore the coating source for EB process is needed to form as ingot with appropriate density and microstructure to sustain their shape and stable melts status during EB deposition. In this study, we tried to find the optimum powder condition for fabrication of ingot of 8 wt% yttria stabilized zirconia which can be used for EB irradiation. It seems that the ingot, which is fabricated through bi-modal type initial powder mixture which consists of tens of micro and nano size particles, was shown better performance than the ingot which is fabricated using monolithic nanoscale powder when exposed to high power EB.

• 제어로봇시스템학회:학술대회논문집
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• 1995.10a
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• pp.138-141
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• 1995

This paper describes a 3-dimensional measuring method for cylindrical huge ingot pressed with forging machine. Target ingot we consider here is rotated around a fixed axis during measurement. Using an image processing technique every profile of cross-section is obtained, and 3D image is reconstructed. One method to calibrate the system setting is also presented. Experimental results reveal that the method are applicable and the algorithm is feasible.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.1
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• pp.9-15
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• 2008

Mokumegane is one of the sophisticated metal craft techniques enabling wood grain surface effect. To embody the mokumegane, an ingot of well-bonded stacked metal plates has been required. Traditionally prepared mokumegane ingots were bonded using charcoal which enables reduction atmosphere, but sometimes end up with collapse of bonding interface due to the lack of reliable process control. We proposed a systematic vacuum direct bonding process for ingots. First, we confirmed copper//copper homogeneous plate bonding at $900^{\circ}C$ by applying uniaxial press of 2.5kg. We observed 80min required to obtain 90%-bonding ratio and the diffusion coefficient would be enhanced up to 100 times due to surface effect. Second, by considering enhanced diffusion behavior, we also obtained optimum bonding condition in copper/silver heterogeneous plates that ensures 90%-bonding ratio at $700^{\circ}C$ for 10min with apply uniaxial press. A 7-layered copper/silver ingot is prepared successfully, and eventually the prototype mokumegane cases for mobile phone were fabricated with these ingot.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.187.2-187.2
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• 2011

태양광산업의 value chain중 up-stream쪽인 고순도 실리콘산업은 셀, 모듈, 시스템 쪽에 비하여 영업 이익률이나 부가가치 측면에서 매우 높은 성장성을 현재 보여주고 있으며 최근 원자력산업의 안전성 문제가 대두됨으로 인하여 태양광수요가 전 세계적으로 증대되는 경향을 나타내어 태양광용 실리콘의 수요가 확대됨과 아울러 spot시장에서의 가격 또한 상승하고 있다. 이런 관점에서 잉곳 및 웨이퍼 가공 중에 발생하는 고순도 실리콘 폐기물의 재활용 이 다시 주목받고 있다. 태양전지 웨이퍼(wafer)용 소재는 6N급 이상의 결정질 실리콘 잉곳(ingot)이 주를 이루며, 고효율의 셀을 제조하기 위해서 단결정 실리콘 잉곳이 많이 사용된다. 실리콘 단결정을 육성하는 방법에는 Floating zone 법, Czochralski 법, Bridgeman 법, CVD 등 매우 다양하다. 이 중 Czochralski 법은 전체 생산량의 대부분을 차지하고 있는 방법으로, 용융액에서 결정을 인상하여 ingot을 제작하는 방법이다. 그러나 대량의 전기에너지를 소비하여 제작되는 고순도의 실리콘 단결정 잉곳은 후 가공공정에서 그 절반 이상이 분말(powder) 및 슬러지(sludge)로 폐기되므로, 자원의 재활용 및 환경오염 측면에서 주요과제가 되고 있다. Czochralski 법으로 제작된 ingot의 경우 그 표면이 매끄럽지 못하여, 웨이퍼 단위의 가공 시 형태가 진원이 될 수 있도록 표면을 미리 연마(grinding)하는데, 이때에도 미세 분말이 다량 발생하게 된다. 본 연구에서는 이러한 고순도 단결정 실리콘 ingot의 연마 가공공정에서 발생한 미세 분말을 용해하여 보았다. 진공 챔버(chamber) 내부에 유도가열 코일과 냉도가니로 구성된 장비를 통해 전자기유도가열을 이용하여 실리콘 분말 폐기물을 용해하고, 그 시편을 ICP-MS 및 비저항 측정을 통해 분말 의 특성을 조사하여 재활용 가능성을 검토해 보았다.

• Journal of Korea Foundry Society
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• v.8 no.3
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• pp.287-295
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• 1988

The experiment was carried out for the purpose of studying the carburization of pure iron ingot and sintered iron powder by solid carbon in the atmosphere of CO gas. The volocity of carburization was estimaed by the diffusion coefficient D calculated by carburization equation. The results obtained were as follow: 1. The higher the carburization temperature, carburization depth and carbon concentration were increased, and the melting zone which had $2.8{\sim}3.4%C$ at the $3{\sim}4mm$ from interface of carburization was formed at $1300^{\circ}C$. 2. The main carburization mechanism of pure iron ingot and the sintered iron powder were proceeded by CO gas up to $1100^{\circ}C$, solid carbon over than $1300^{\circ}C$, respectively. 3. The main carburization mechanism of pure iron ingot at $1200^{\circ}C$ was proceeded by solid carbon, and sintered iron powder was proceeded bs CO gas, however, in case the reaction time, the carburization was proceeded by solid carbon over than 5hrs. 4. The diffusion coefficient D of carbon were $0.559{\times}10^{-6}cm^2.sec^{-1}$ at $1100^{\circ}C$, $0.237{\times}10^{-6}cm^2.sec^{-1}$ at $1200^{\circ}C$, $0.087{\times}10^{-6}cm^2.sec^{-1}$ at $1300^{\circ}C$, in case of pure iron ingot carburized. 5. The diffusion coefficient D of carbon were $0.124\;cm^2.sec^{-1}$ at $1100^{\circ}C$, $0.102\;cm^2.sec^{-1}$ at $1200^{\circ}C$, $0.480\;{\times}10^{-6}cm^2.sec^{-1}$ at $1300^{\circ}C$, in the case of sintered iron carburized at the pressuring $4ton\;/\;cm^2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.45-49
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• 2008

The development of manufacturing process of silicon (Si) ingots is one of the important issues to the growth of the photovoltaic industry. Polycrystalline Si wafers shares more than 60% of the photovoltaic market due to its cost advantage compared to mono crystalline silicon wafers. Several solidification processes have been developed by industry including casting, heat exchange method (HEM) and electromagnetic casting. In this paper, the advanced directional solidification (ADS) method is used to growth of large sized polycrystalline Si ingot. This method has the advantages of the small heat loss, short cycle time and efficient directional solidification. The numerical simulation of the process is applied using a fluid dynamics model to simulate the temperature distribution. The results of simulations are confirmed efficient directional solidification to the growth of large sized polycrystalline Si ingot above 240 kg.