Journal of Aerospace System Engineering (항공우주시스템공학회지)

The Society for Aerospace System Engineering (항공우주시스템공학회)
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A Study on GaAs Ingot Growth Technique Applied to VGF(Vertical gradient freeze) Growth Method

수직온도구배 성장 공법을 적용한 갈륨비소 잉곳 성장 기술 연구

  • Received : 2022.04.03
  • Accepted : 2022.07.05
  • Published : 2022.10.31
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Abstract

The various GaAs panel are applied widening for aircraft and aerospace structures. This study presented technology for the growth of large-diameter GaAs ingots greater than 4 inches through numerical analysis using temperature control technology. In this work, proposes manufacturing technology adapted to various temperature and environmental changes through temperature simulation. With the development of ingot technology, the possibility of future application increased by obtaining expected results with minor deviation.

항공기 및 우주 구조물에 갈륨비소 기판은 다양하게 적용된다. 본 연구에서 온도 제어기술을 활용하여 수치해석을 통해 4인치 이상의 대구경 갈륨비소 잉곳의 성장에 관한 기술을 제시하였다. 본 연구를 통해 온도 시뮬레이션 기술을 기반으로 다양한 온도 변화와 주위 환경의 변화에 따른 제작 기술을 확보하였다. 잉곳 기술 개발을 통하여 편차가 작은 특성 결과를 도출하여 향후 적용 가능성을 최대화 하였다.

Keywords

Acknowledgement

본 과제는 전라북도 R&D지원사업의 지원(RA2021-01-C4-01)에 의해 수행되었습니다.

References

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