Browse > Article

Simulation by heat transfer of ADS process for large sized polycrystalline silicon ingot growth  

Shur, J.W. (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
Hwang, J.H. (School of Mechanical Engineering, Sungkyunkwan University)
Kim, Y.J. (School of Mechanical Engineering, Sungkyunkwan University)
Moon, S.J. (Korea Research Institute of Chemical Technology)
So, W.W. (Korea Research Institute of Chemical Technology)
Yoon, D.H. (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.18, no.1, 2008 , pp. 45-49 More about this Journal
Abstract
The development of manufacturing process of silicon (Si) ingots is one of the important issues to the growth of the photovoltaic industry. Polycrystalline Si wafers shares more than 60% of the photovoltaic market due to its cost advantage compared to mono crystalline silicon wafers. Several solidification processes have been developed by industry including casting, heat exchange method (HEM) and electromagnetic casting. In this paper, the advanced directional solidification (ADS) method is used to growth of large sized polycrystalline Si ingot. This method has the advantages of the small heat loss, short cycle time and efficient directional solidification. The numerical simulation of the process is applied using a fluid dynamics model to simulate the temperature distribution. The results of simulations are confirmed efficient directional solidification to the growth of large sized polycrystalline Si ingot above 240 kg.
Keywords
Photovoltaic; Advanced directional solidification; Large sized polycrystalline Si ingot; Numerical simulation;
Citations & Related Records
연도 인용수 순위
  • Reference
1 L. Liu, S. Nakano and K. Kakimoto, "An analysis of temperature distribution near the melt-crystal interface in silicon czochralski growth with a transverse magnetic field", J. Crystal Growth 282 (2005) 49   DOI   ScienceOn
2 L. Liu and K. Kakimoto, "Partly three-dimensional global modeling of a silicon czochralski furnace. I. Principles, formulation and implementation of the model", Int. J. Heat and Mass Transfer 48 (2005) 4481   DOI   ScienceOn
3 F. Ferrazza, "Large size multicrystalline silicon ingots", Solar Energy Materials & Solar Cells 72 (2002) 77   DOI   ScienceOn
4 D. Franke, T. Rettelbach, C. Habler, W. Koch and A. Müller, "Silicon ingot casting: process development by numerical simulations", Solar Energy Materials & Solar Cells 72 (2002) 83   DOI   ScienceOn
5 C. Khattak, F. Schmid, D. Cunningham and J. Summers, "Directional solidification of 80 kg multicrystalline silicon ingots by HEM", Photovoltaic Specialists Conference, 22nd IEEE (1991) 976
6 D. Vizman, J. Friedrich and G. Müller, "Comparison of the predictions from 3D numerical simulation with temperature distributions measured in Si czochralski melts under the influence of different magnetic fields", J. Crystal Growth 230 (2003) 73
7 C.H. Habler, G. Stollwerck, W. Koch, W. Krumbe, A. Müller, D. Franke and T. Rettelbach, "Multicrystalline silicon for solar cells: process development by numerical simulation", Adv. Mater. 13 (2001) 1815   DOI   ScienceOn
8 K. Kakimoto, L. Liu and S. Nakano, "Analysis of temperature distributions in a uni-directional-solidification process for multi-crystalline silicon of solar cells by a global model", Material Science and Engineering B 134 (2006) 269   DOI   ScienceOn
9 V. Kalaev, D. Lukanin, V. Zabelin, Y. Makarov, J. Virbulis, E. Dornberger and W. Ammon, "Calculation of bulk defects in CZ Si growth: Impact of melt turbulent fluctuations", J. Crystal Growth 250 (2003) 203   DOI   ScienceOn