1 |
Hyunsu Jenung, Kiyoung Lee, "An Investigation of the Characteristics of Electron Diffusion Coefficients in GaAs by Noise Calculation Method," Proceeding of Summer Conference on The Korean Institute of Communications and Information Sciences, pp. 14-18, 1993.
|
2 |
Youngse Kwon, "A Study on the Development of the Process Technology of GaAs Semiconductor," Proceeding of The Korean Institute of Communications and Information Sciences, pp. 17-27, 1987.
|
3 |
H Weimann, J. amom, Th. Jung G. Muller, "Numerical Simulation of the Growth of 2" Diameter GaAs Crystal by the Vertical Gradient Freeze Technique," Journal of Crystal Growth, Vol. 180, pp. 560-565, 1997.
DOI
|
4 |
B. Birkmann, M. Rasp, J. Stenzenberger, G. MuKller, "Growth of 3" and 4" gallium arsenide crystals by the vertical gradient freeze (VGF) method," Journal of Crystal Growth, Vol. 211, pp. 157-162, 2000.
DOI
|
5 |
J. Amon, P. Berwian, G. Muller, "Computer-Assisted Growth of Low-EPD GaAs with 3" Diameter by the Vertical Gradient-Freeze Technique," Journal of Crystal Growth, Vol. 198/199, pp. 361-366, 1999.
DOI
|
6 |
Christiane Frank-Rotsch, Natasha Dropka, Frank-Michael Kiessling, and Peter Rudolph, "Semiconductor Crystal Growth under the Influence of Magnetic Fields," Crystal Research and Technology, Vol. 55, pp. 1900115, 2020.
DOI
|