• Transactions on Electrical and Electronic Materials
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• 제18권4호
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• pp.225-228
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• 2017

In this study, zinc tin oxide (ZTO) films were prepared on indium tin oxide (ITO) glasses and annealed at different temperatures under vacuum to investigate the correlation between the Ohmic/Schottky contacts, electrical properties, and bonding structures with respect to the annealing temperatures. The ZTO film annealed at $150^{\circ}C$ exhibited an amorphous structure because of the electron-hole recombination effect, and the current of the ZTO film annealed at $150^{\circ}C$ was less than that of the other films because of the potential barrier effect at the Schottky contact. The drift current as charge carriers was similar to the leakage current in a transparent thin-film device, but the diffusion current related to the Schottky barrier leads to the decrease in the leakage current. The direction of the diffusion current was opposite to that of the drift current resulting in a two-fold enhancement of the cut-off effect of leakage drift current due to the diffusion current, and improved performance of the device with the Schottky barrier. Hence, the thin film with an amorphous structure easily becomes a Schottky contact.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.93-94
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• 2009

The influences of $O_2$ partial pressure on electrical properties of transparent semiconducting indium zinc tin oxide thin films deposited at room temperature by magnetron sputtering have been investigated. The experimental results show that by varying the $O_2$ partial pressure during deposition, electron mobilities of IZTO thin film can be controlled between 7 and $25\;cm^2/Vs$. For conducting films, the carrier concentration and resistivity are ${\sim}\;10^{21}\;cm^{-3}$ and ${\sim}\;10^{-4}\;{\Omega}\;cm$, respectively. Concerning semiconducting films, under 12% $O_2$ partial fraction, the electron concentration is $10^{18}\;cm^{-3}$, showing the promising candidate for the application of transparent thin film transistors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.857-860
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• 2002

The material that is both conductive in electricity and transparent to the visible-ray is called transparent conducting thin film. It has many field of application such as solar cell, liquid crystal display, transparent electrical heater, selective optical filter, and a optical electric device. In this study, indium tin oxide (ITO ; Sn-doped $In_2O_3$) thin films were deposited on $SiO_2$/soda-lime glass plates by a dc magnetron sputtering technique. The crystallinity and electrical properties of the films were investigated by X-ray diffraction(XRD), atomic force microscopy (AFM) scanning and 4-point probe. The optical transmittance of ITO films in the range of 300-1000nm were measured with a spectrophotometer. As a result, we obtained polycrystalline structured ITO films with (222), (400), and (440) peak. Transmittance of all the films were higher than 90% in the visible range.

• Journal of the Optical Society of Korea
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• 제13권1호
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• pp.65-74
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• 2009

Device quality indium tin oxide (ITO) films are deposited on glass substrates and ultra-thin diamond-like carbon films are deposited as a buffer layer on ITO by a pulsed Nd:YAG laser at 355 nm and 532 nm wavelength. ITO films deposited at room temperature are largely amorphous although their optical transmittances in the visible range are > 90%. The resistivity of their amorphous ITO films is too high to enable an efficient organic light-emitting device (OLED), in contrast to that deposited by a KrF laser. Substrate heating at $200^{\circ}C$ with laser wavelength of 355 nm, the ITO film resistivity decreases by almost an order of magnitude to $2{\times}10^{-4}\;{\Omega}\;cm$ while its optical transmittance is maintained at > 90%. The thermally induced crystallization of ITO has a preferred <111> directional orientation texture which largely accounts for the lowering of film resistivity. The background gas and deposition distance, that between the ITO target and the glass substrate, influence the thin-film microstructures. The optical and electrical properties are compared to published results using other nanosecond lasers and other fluence, as well as the use of ultra fast lasers. Molecularly doped, single-layer OLEDs of ITO/(PVK+TPD+$Alq_3$)/Al which are fabricated using pulsed-laser deposited ITO samples are compared to those fabricated using the commercial ITO. Effects such as surface texture and roughness of ITO and the insertion of DLC as a buffer layer into ITO/DLC/(PVK+TPD+$Alq_3$)/Al devices are investigated. The effects of DLC-on-ITO on OLED improvement such as better turn-on voltage and brightness are explained by a possible reduction of energy barrier to the hole injection from ITO into the light-emitting layer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1560-1563
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• 2005

In this study, we introduce indium tin oxide (ITO) thin films grown by using a low-frequency magnetron sputtering method (LFMSM). Characteristics of the ITO thin films deposited on polyethersulfone (PES) and polyethylene terephthalate (PET) substrates are investigated. Experiments were carried out as a function of deposition time. ITO thin films on polymer substrates revealed amorphous structure. The optical, the electrical and structural properties of the films on PES substrate are better than those on PET substrates.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.554-557
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• 2001

Indium Tin Oxide(ITO) thin films have been fabricated by the dc magnetron sputtering technique with a target of a mixture $In_{2}O_{3}$(90mol%) and $SnO_{2}$(10mol%). We prepared ITO thin films with substrate temperature 200 to $400^{\circ}C$ and annealing temperature 200 to $500^{\circ}C$. Good polycrystalline-structured ITO films with a low electrical resistivity of $3.4{\times}10^{-4}\Omega{\cdot}cm$ have been obtained. The visible light transmittance of all obtained films was over 80 %.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.554-557
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• 2001

Indium Tin Oxide(ITO) thin films have been fabricated by the dc magnetron sputtering technique with a target of a mixture In$_2$O$_3$(90mo1%) and SnO$_2$(10mo1%). We prepared ITO thin films with substrate temperature 200 to 400$^{\circ}C$ and annealing temperature 200 to 500$^{\circ}C$ food polycrystalline-structured ITO films with a low electrical resistivity of 3.4${\times}$10$\^$-4/ Ω$.$cm have been obtained. The visible light transmittance of all obtained films was over 80 %.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.185.2-185.2
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• 2015

Tin Oxide (SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. In addition, it would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. There have been concentrated on the improvement of optical properties, such as conductivity and transparency, by doping Indium Oxide and Gallium Oxide. Recently, with development of fabrication techniques, high-qulaity SnO2 epitaxial thin films have been studied and received much attention to produce the electronic devices such as sensor and light-emitting diode. In this study, powder sputtering method was employed to deposit epitaxial thin films on sapphire (0001) substrates. A commercial SnO2 powder was sputtered. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using XRD, SEM, AFM, and Raman spectroscopy measurements. The details of physical properties of epitaxial SnO2 thin films will be presented.

• 한국정보통신학회논문지
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• 제14권6호
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• pp.1465-1468
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• 2010

습식 식각은 식각용액으로서 화학용액을 사용하는 공정으로 반응물이 기판표면에서 화학반응을 일으켜 표면을 식각하는 과정이다. 습식 식각 시 수${\mu}m$의 해상도를 얻기 위해서는 그 부식액의 조성이나, 에칭시간, 부식액의 온도 등을 고려하여야 한다. 본 실험에서 사용한 금속은 Cr, Al, ITO 로 모두 DC sputter 방법을 사용해서 증착하여 사용하였다. Cr박막은 $1300{\AA}$ 정도의 두께를 사용하였고, ITO (Indium Tin Oxide) 박막은 가시광 영역에서 투명하고 (80% 이상의 transmittance), 저저항 (Sheet Resistance : $50\;{\Omega}/sq$ 이하) 인 박막을 사용하였으며, 신호선으로 주로 사용되는 Al등의 증착조건에 따른 wet etching 특성을 조사하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.450-450
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• 2007

Indium tin oxide (ITO), which is used as an electrode in organic thin film transistors (OTFT), was modified with a self-assembled monolayer (SAM) by wet chemical surface modification. The surface of the ITO was treated by dipping method in a solution of 2-chloroethane phosphonic acid (2-CEPA) at room temperature. The work function in the ITO which was modified with the SAM in the 2-CEPA had 5.43eV. A surface energy and a transmittance were unchanged in an error range. On this study, therefore, possibility of ohmic contact is showed in the interface between the ITO and the organic semiconductors. These results suggest that the treatment of the ITO with the SAM can greatly enhance the performance of the OTFT.