• 제목/요약/키워드: indium

검색결과 1,606건 처리시간 0.039초

용액공정 Indium-Tin-Oxide 전극에서 In/Sn Ratio 및 Precursor가 전기적 특성에 미치는 영향 (Influence of In/Sn Ratio and Precursor on the Electrical Properties of Solution-processed Indium-Tin-Oxide Electrodes)

  • 김나영;김영훈;한정인
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2011년도 제42회 하계학술대회
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    • pp.2013-2014
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    • 2011
  • Indium tin oxide (ITO) thin films have been deposited onto bare glass substrates by sol-gel process. The solution was prepared by mixing indium precursor and tin precursor dissolved in 2-methoxyethanol at $75^{\circ}C$ for 12 hours. Indium tin oxide films were prepared by slowly heat up to $200^{\circ}C$ for 10 minutes and annealed at $350^{\circ}C$ for 1 hour. In this paper, we researched simple and inexpensive sol-gel process. To find the optimal ratio of In/Sn to reduce electric resistance in ITO made by sol-gel process, we assessed electric properties varying the ratio of In and Sn precursor.

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OPTICAL PROPERTIES OF INDIUM OXIDE AND INDIUM TIN OXIDE FILMS PREP ARED BY SPUTTERING

  • Fujita, Yasuhiko;Kitakizaki, Kaoru
    • 한국표면공학회지
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    • 제29권6호
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    • pp.660-665
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    • 1996
  • Thin films of indium oxide and indium tin oxide have been prepared by d.c. magnetron sputtering onto the fused silica substrates kept at 90, 200 and $300^{\circ}C$. In order to elucidate the optical absorption process in low energy region below 3 eV, we have analyzed the absorption coefficients obtained from reflectance and transmittance measurements for these films based on the Lucovsky model. It has been found for the first time that a defect center in the band gap is located at 0.8~1.4 eV below the Fermi level in all films and arises from oxygen vacancies in their films. The optical absorption in low energy region is explained to be dominated by the transition of electrons trapped at the positively charged (+2e) oxygen vacancies with s-like nature to the conduction band formed from the 5s-orbit in indium atoms.

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산침출에 의한 아연제련잔사로부터 갈륨 및 인디움의 회수 (Recovery of Gallium and Indium from Zinc Residues by Acid Leaching)

  • 이화영;김성규;오종기
    • 자원리싸이클링
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    • 제2권2호
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    • pp.22-26
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    • 1993
  • 아연 제련잔사로부터 갈륨과 인디움을 동시에 회수하기 위한 연속공정도를 확립하고자 하였다. 갈륨만을 회수하는 알칼리처리법과는 달리 황산침출에 의할 경우 갈륨과 인디움의 동시회수가 가능하며, 2단계 중화를 통하여 용액중의 다량의 철분을 분리제거할 수 있었다. 1차처리하여 얻은 갈륨과 인디움의 침천물은 알칼리 및 산처리에 의해 갈륨과 인디움을 각각 분리회수할 수있었으며, 약산성 용액에서 저농도의 인디움을 회수하고자 할 경우 아연금속분말에 의한 cementation법을 사용하는 것이 효고적이었다.

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Composite of Indium and Polysorbate 20 as Inhibitor for Zinc Corrosion in Alkaline Solution

  • Li, Xiaoping;Liang, Man;Zhou, Hebing;Huang, Qiming;Lv, Dongsheng;Li, Weishan
    • Bulletin of the Korean Chemical Society
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    • 제33권5호
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    • pp.1566-1570
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    • 2012
  • The combined use of indium and polysorbate 20 (Tween 20) was considered as a new inhibition technique for zinc corrosion. Zn and Zn-In alloy coatings were prepared by electrodeposition and their morphology and composition were characterized by scanning electron microscopy (SEM) and inductively coupled plasma atomic emission spectrometry (ICP-AES). The corrosion inhibition effect of indium and Tween 20 on zinc was investigated by polarization curves and electrochemical impedance spectroscopy (EIS). The corrosion inhibition efficiencies obtained from Tafel and EIS analyses are well in agreement. Zinc corrosion can be inhibited to some extent by the individual use of indium and Tween 20 and higher corrosion inhibition efficiency can be obtained by the combined use of indium and Tween 20.

폐 디스플레이 재활용을 위한 인듐 회수기술 (Recovery of Indium for the Recycling of End-of-life Flat Panel Display Devices)

  • 엄성현;조성수;이수영
    • 공업화학
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    • 제26권4호
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    • pp.389-393
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    • 2015
  • 인듐은 디스플레이 산업의 발전과 더불어 그 수요가 급격하게 증가하고 있으며 산업적 중요도도 높아 보조 공급원으로 부터의 회수기술 개발이 점점 관심을 얻고 있다. 폐 디스플레이 재활용을 위한 인듐 회수기술은 크게 해체분리, 선별농축 그리고 정제 공정으로 구성되어 있으며 목표하는 소재의 최종 순도에 따라 추가적으로 고도화 공정이 도입된다. 본 논문에서는 인듐 회수를 위해 적용되고 있는 기술에 대해서 소개하며 연구동향과 향후 전망 등에 고찰하였다.

Growth of Nano- and Microstructured Indium Nitride Crystals by the Reaction of Indium Oxide with Ammonia

  • Jung, Woo-Sik;Ra, Choon-Sup;Min, Bong-Ki
    • Bulletin of the Korean Chemical Society
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    • 제26권9호
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    • pp.1354-1358
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    • 2005
  • Nano- and microstructured indium nitride crystals were synthesized by the reaction of indium oxide ($In_2O_3$) powder and its pellet with ammonia in the temperature range 580-700 ${^{\circ}C}$. The degree of nitridation of $In_2O_3$ to InN was very sensitive to the nitridation temperature. The formation of zero- to three-dimensional structured InN crystals demonstrated that $In_2O_3$ is nitridated to InN via two dominant parallel routes (solid ($In_2O_3$)-to-solid (InN) and gas ($In_2O$)-to-solid (InN)). The growth of InN crystals with such various morphologies was explained by the vapor-solid (VS) mechanism where the degree of supersaturation of In vapor determines the growth morphology and the vapor was mainly by the reaction of $In_2O$ with ammonia and partially by sublimation of solid InN. The pellet method was proven to be useful to obtain homogeneous InN nanowires.

BCB 평탄화를 활용한 마이크로 기둥 구조물 위의 인듐 범프 형성 공정 (Formation of Indium Bumps on Micro-pillar Structures through BCB Planarization)

  • 박민수
    • 마이크로전자및패키징학회지
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    • 제28권4호
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    • pp.57-61
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    • 2021
  • 마이크로 기둥 구조물 위에 인듐 범프 배열을 형성하는 공정을 제안한다. Benzocyclobutene (BCB) 평탄화와 etch-back 공정을 통하여 매우 협소한 마이크로 기둥 위에 인듐 범프를 형성할 수 있는 공간을 확보할 수 있다. 본 연구에서는 단파장 적외선을 감지용 320×256 포맷의 하이브리드 카메라 센서 제조에 대한 자세한 공정 과정을 소개한다. 다양한 공정을 거친 BCB 필름의 shear strength는 quartz crystal microbalance 방법으로 측정하여 추출하였다. BCB 필름의 shear strength는 인듐 범프보다 103배 더 높은 것으로 확인하였다. 제작된 SWIR 카메라 센서로부터 측정된 암전류의 분포는 제안한 인듐 범프 형성 공정이 매우 민감한 적외선 카메라 센서를 구현하는 데 유용할 수 있음을 제시한다.

도재소부용 금합금에서 인듐, 주석 첨가가 금속-도재계면 특성에 미치는 영향 (Effects of Indium and Tin on Interfacial Property of Porcelain Fused to Low Gold Alloys)

  • 남상용;곽동주;정석민
    • 대한치과기공학회지
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    • 제23권1호
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    • pp.31-43
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    • 2001
  • This study was performed to observe the micro-structure change of surface, behavior of oxide change of element, the component transformation of the alloy and the bonding strength between the porcelain interface in order to investigate effects of indium, tin on interfacial properties of porcelain fused to low gold alloy. Hardness of castings was measured with a micro-Vicker's hardness tester. The compositional change of the surface of heat-treated specimen was analyzed with an EDS and an EPMA. The interfacial shear bonding strength between alloy specimen and fused porcelain was measured with a mechanical testing system(MTS 858.20). The results were as follows: 1) The hardness value of alloy increased as increasing amount of indium addition. 2) The formation of oxidation increased as increasing indium and tin contents after heat treatment. 3) Diffusion of indium and tin elements increased as increasing indium and tin contents in metal-porcelain surface after porcelain fused to metal firing. 4) The most interfacial shear bonding strength was increased as increasing a composition of adding elements, and a heat-treatment time, and an oxygen partial pressure. From the results of this study it was found that the addition of alloying elements such as indium and tin increase hardness of as-cast alloy, produce surface oxide layer of adding elements by heat-treatment which may improve interfacial bonding strength between alloy and porcelain.

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증착두께 및 산소도입속도가 IZO 필름의 전기 및 광학적 특성에 미치는 영향 (Effects of Deposition Thickness and Oxygen Introduction Flow Rate on Electrical and Optical Properties of IZO Films)

  • 박성환;하기룡
    • 공업화학
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    • 제21권2호
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    • pp.224-229
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    • 2010
  • Transparent conducting oxide (TCO) 박막은 평판 디스플레이 산업에 널리 사용되고 있다. 화학적으로 우수한 투명전도성 Indium Zinc Oxide (IZO) 필름은 Indium Tin Oxide (ITO) 필름의 대체 물질로 관심을 끌고 있다. 본 연구에서는 90 : 10 wt%의 $In_2O_3$와 ZnO를 혼합하여 만든 타겟으로 전자빔 증착법을 이용하여 polynorbornene (PNB) 기판 위에 IZO 박막을 제조하였다. UV/Visible spectrophotometer, 4-Point Probe를 이용하여 증착 두께와 산소도입 속도에 따른 IZO 필름의 전기적 및 광학적 특성을 연구하였으며, SEM, XRD 및 XPS를 이용하여 증착된 IZO의 구조적 특성 및 표면조성비를 연구하였다.