• Title/Summary/Keyword: in situ temperature

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In-situ Thermally Curable Hyper-branched 10H-butylphenothiazine

  • Jo, Mi-Young;Lim, Youn-Hee;Ahn, Byung-Hyun;Lee, Gun-Dae;Kim, Joo-Hyun
    • Bulletin of the Korean Chemical Society
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    • v.33 no.2
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    • pp.492-498
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    • 2012
  • A hyper branched 10-butylphenothiazine with in-situ thermally curable methacrylate (1,3,5-tris-[$\{$10-Butyl-3-(4-(2-methyl-acryloyloxy)-phenyl)-7-yl-10H-phenothiazine$\}$]-benzene, (tris-PTMA)) was synthesized successfully. From the TGA thermogram of tris-PTMA was thermally stable up to $336^{\circ}C$. In the first heating scan of DSC thermogram, tris-PTMA showed glass transition temperature (Tg) at $140^{\circ}C$ and broad endothermic process in the region of $144-179^{\circ}C$, which is thermally curing temperature. In the second heating process, $T_g$ exhibited at $158.7^{\circ}C$ and endothermic process was not observed. Thermally cured tris-PTMA showed no big change in the UV-visible spectrum after washing with organic solvent such as methylene chloride, chloroform, toluene, indicating that thermally cured film was very good solvent resistance. Thermally cured tris-PTMA was electrochemically stable and the HOMO energy level of tris-PTMA was -5.54 eV. The maximum luminance efficiency of double layer structured polymer light-emitting diode based on in-situ thermally cured tris-PTMA was 0.685 cd/A at 16.0 V, which was higher than that of the device without thermally cured tris-PTMA (0.348 cd/A at 15.0 V).

Kinetic Study on the Cationic Polymerization of Glycidyl Azide Monomer(GAM) by Real-Time In-suti IR (실시간 In-situ IR을 이용한 Glycidyl Azide Monomer(GAM)의 양이온중합 반응속도 연구)

  • Kim, Hyoung-Sug;Kim, Kwan-Yung;Kang, Shin-Choon;Noh, Si-Tae;Kim, Jin-Seuk;Yu, Jae-Chul;Choi, Keun-Bae
    • Journal of the Korea Institute of Military Science and Technology
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    • v.12 no.2
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    • pp.228-235
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    • 2009
  • We synthesized glycidyl azide monomer(GAM) as a monomer for polymerization of glycidy azide polymer(GAP) which is a promising energetic prepolymer for a plastic-bonded explosive. Using quantitative real-tim in-situ infrared(in-situ IR) spectroscopy, kinetic study on the cationic ring opening polymerization of GAM was carried out. The reaction rate was obtained from monitoring the change of ether C-O stretching band($1050cm^{-1}$) in series IR spectra. The reaction was in accordance with the first-order reaction law for each of reaction temperature at 100/1 mole ratio of [GAM]/[$BF_3*etherate$]. In the ring opening polymerization of GAM, with ratio of [GAM]/[$BF_3*etherate$] to equal 100/1 at various temperature, the activation parameters obtained from the evaluation of kinetic data were ${\Delta}H^*$=14.34kcal/mol, ${\Delta}S^*=-12.31cal/mol{\cdot}K$ and $E_a$=14.89kcal/mol.

Effects of Processing Parameters on the Fabrication of in-situ Al/TiC Composites by Thermally Activated Combustion Reaction Process in an Aluminium Melt using Al-TiO2-C Powder Mixtures (알루미늄 용탕에서 Al-TiO2-C의 연소합성반응에 의한 in-situ Al/TiC 복합재료의 제조에 미치는 공정변수의 영향)

  • Kim, Hwa-Jung;Lee, Jung-Moo;Cho, Young-Hee;Kim, Jong-Jin;Kim, Su-Hyeon;Lee, Jae-Chul
    • Korean Journal of Metals and Materials
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    • v.50 no.9
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    • pp.677-684
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    • 2012
  • A feasible way to fabricate in-situ Al/TiC composites was investigated. An elemental mixture of $Al-TiO_2-C$ pellet was directly added into an Al melt at $800-920^{\circ}C$ to form TiC by self-combustion reaction. The addition of CuO initiates the self-combustion reaction to form TiC in $1-2{\mu}m$ at the melt temperature above $850^{\circ}C$. Besides the CuO addition, a diluent element of excess Al plays a significant role in the TiC formation by forming a precursor phase, $Al_3Ti$. Processing parameters such as CuO content, the amount of excess Al and the melt temperature, have affected the combustion reaction and formation of TiC, and their influences on the microstructures of in-situ Al/TiC composites are examined.

Liquid crystal alignment and photo-induced pretilt by imidization temperature. (소성온도에 따른 광유기된 프리틸트와 액정배향)

  • 서대식;김형규
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.533-536
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    • 1999
  • In this study, we investigated pretilt angle generation and liquid crystal alignment by UV light irradiation during imidization of polyimide. Generated pretilt angle of NLC by using in-situ UV photo-alignment method was smaller than that of the conventional UV photo-alignment method. Also, generated pretilt angle of NLC tends to increase by annealing. We found that in-situ UV photo-alignment method has higher thermal stability of LC alignment, but it has a disadvantage to control pretilt angle.

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The Comparison of the In-Situ Thermal Response Tests and CFD Analysis of Vertical-type Geothermal Heat Exchanger (수직형 지중 열교환기의 현장 열응답 시험과 CFD 해석 비교)

  • Sim, Yong-Sub;Lee, Hee-Sang
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.14 no.7
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    • pp.3164-3169
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    • 2013
  • In this study, a series of CFD analysis was performed in order to predict the leaving water temperature and the slope of in-situ thermal response tests of the vertical-type geothermal heat exchangers. The geothermal heat exchanger and surrounding ground formation were modeled using GAMBIT and simulation was used by utilizing FLUENT which is commercial CFD code. Comparing with the results of CFD and in-situ thermal response tests, the results of CFD was presented good agreement with $0.5^{\circ}C$ difference of Leaving Water Temperature and with 1.6% difference of the Slope.

Analysis of the Structural Properties for ZnO/Sapphire(0001) Thin Films by In-situ Atmosphere Annealing (In-situ 분위기 Annealing에 따른 ZnO/Sapphire(0001) 박막의 구조적 특성 분석)

  • Wang Min-Sung;Yoo In-Sung;Park Choon-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.8
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    • pp.769-774
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    • 2006
  • In this paper the ZnO thin films, which has used spotlight of next generation short wavelength LEDs and semiconductor laser were deposited based on RF magnetron sputtering is described. The temperature at substrate and work pressure, which has implemented in sputtering process of ZnO thin films were settle down at $100^{\circ}C$ and 15 mTorr respectively. The ZnO 5N has used target. The thickness of ZnO thin films was about $1.6{\mu}m$ which was measured by SEM analysis after the sputtering process. Structural properties of ZnO thin films by in-situ and atmosphere annealing were analyzed by XRD. Transformation of grain size and surface roughness were observed by AFM. XPS spectra showed that ZnO thin film had a peak positions corresponding to the $Zn_{2p}$ and the $O_{1s}$. As form above XPS, we confirmed that post-annealing condition changed the atom ratio of Zn/O and microstructure in ZnO thin films.

Evaluation of Mechanical Properties of Carbon/Epoxy Composites Under In situ Low- and High-Temperature Environments (저온과 고온 환경 하에서 카본/에폭시 복합재의 기계적 물성 평가)

  • Im, JaeMoon;Shin, KwangBok;Hwang, Taekyung
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.39 no.6
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    • pp.567-573
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    • 2015
  • This paper aims to evaluate the variation in the mechanical properties of carbon/epoxy composites under in situ low- and high-temperature environments. In situ low- and high-temperature environments were simulated with temperature ranging from $-40^{\circ}C$ to $220^{\circ}C$ using an environmental chamber and furnace. The variation in the mechanical properties of the composites was measured for longitudinal and transverse tensile properties, in-plane shear properties and interlaminar shear strength. Under the low temperature of $-40^{\circ}C$, all mechanical properties increased moderately compared to the baseline properties measured at room temperature. The changes in the longitudinal tensile properties decreased moderately with increasing temperature. However, transverse tensile properties, in-plane shear properties and interlaminar shear strength each showed a significant drop due to the glass transition behavior of the matrix after $140^{\circ}C$. Notably, the tensile property value near $100^{\circ}C$ increased compared to baseline property value, which was an unusual occurrence. This behavior was a direct result of post-curing of the epoxy resin due to its exposure to high temperature.

Fabrication and Electromagnetic Properties of $Ni_{81}$$Fe_{19}$ Thin Films ($Ni_{81}$$Fe_{19}$ 박막의 제조와 전자기특성)

  • 이원재;백성관;민복기;송재성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.12
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    • pp.1032-1038
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    • 2000
  • Ni$_{81}$$Fe_{19}$(200 nm) thin films have been deposited by RF-magnetron sputtering on Si(001) substrates, Atomic force microscopy(AFM), X-ray diffraction(XRD) and magnetoresistance(MR) measurements of the thin films for investigating electromagnetic properties and microstructures were employed. During field annelaing for 1hr, there was no big difference n XRD patterns of Ni$_{81}$$Fe_{19}$ thin films. However, there was a significant change in XRD patterns of Ni$_{81}$$Fe_{19}$ thin films deposited at 40$0^{\circ}C$ during in-situ magnetic field deposition. The degree of surface roughness increased with increasing annealing and deposition temperature. With variation of surface roughness, there was no significant difference in MR Characteristics of Ni$_{18}$ $Fe_{19}$ thin films in 1hr-annealed case. High MR ratio was observed in the case of in-situ field deposited Ni$_{81}$$Fe_{19}$ films. 19/ films.

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A Study of the Sintering Behavior of Boron Carbide using In-situ High Temperature Dilatometer (In-situ 고온 딜라토미터를 이용한 탄화붕소의 소결거동 연구)

  • Lee, Hyukjae;Kim, Bum-Sup;Chung, Tai-Joo
    • Journal of Powder Materials
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    • v.21 no.2
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    • pp.102-107
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    • 2014
  • A high temperature dilatometer attached to a graphite furnace is built and used to study the sintering behavior of $B_4C$. Pristine and carbon doped $B_4C$ compacts are sintered at various soaking temperatures and their shrinkage profiles are detected simultaneously using the dilatometer. Carbon additions enhance the sinterability of $B_4C$ with sintering to more than 97% of the theoretical density, while pristine $B_4C$ compacts could not be sintered above 91% due to particle coarsening. The shrinkage profiles of $B_4C$ reveal that the effect of carbon on the sinterability of $B_4C$ can be seen mostly below $1950^{\circ}C$. The high temperature dilatometer delivers very useful information which is impossible to obtain with conventional furnaces.

Preparation of GdBCO Thin Film by Ex-situ Process using Nitrate Precursors (질산염 전구체 원료로 Ex-situ 공정에 의한 GdBCO 박막 제조)

  • Kim, Byeong-Joo;Lee, Chul-Sun;Lee, Jong-Beom;Lee, Jae-Hun;Moon, Seung-Hyun;Lee, Hee-Gyoun;Hong, Gye-Won
    • Progress in Superconductivity
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    • v.13 no.2
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    • pp.127-132
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    • 2011
  • Many research groups have been manufacturing coated conductor by various processes such as PLD, MOD, and MOCVD, but the methods with production cost suitable for wide and massive application of coated conductor did not develop yet. Spray pyrolysis method adopting ultrasonic atomization was tried as one of the possible option. GdBCO precursor films have been deposited on IBAD substrate by spray pyrolysis method at low temperature and converted to GdBCO by post heat treatment. Ultrasonic atomization was used to generate fine droplets from precursor solution of Gd, Ba, and Cu nitrate dissolved in water. Primary GdBCO films were deposited at $500^{\circ}C$ and oxygen partial pressure of 1 torr. After that, the films were converted at various temperatures and low oxygen partial pressures. C-Axis oriented films were obtained IBAD substrates at conversion temperature of around $870^{\circ}C$ and oxygen partial pressures of 500 mtorr ~ 1 torr in a vacuum. Thick c-axis epitaxial film with the thickness of 0.4 ~ 0.5 ${\mu}m$ was obtained on IBAD substrate. C-axis epitaxial GdBCO films were successfully prepared by ex-situ methods using nitrate precursors on IBAD metal substrate. Converted GdBCO films have very dense microstructures with good grain connectivity. EDS composition analysis of the film showed a number of Cu-rich phase in surface. The precursor solution having high copper concent with the composition of Gd : Ba : Cu = 1 : 2 : 4 showed the better grain connectivity and electrical conductivity.