• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.297-302
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• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.78-84
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• 2012

An in-situ optical monitoring method for real-time process monitoring of electrochemical copper deposition (CED) is presented. Process variables to be controlled in achieving desired process results are numerous in the CED process, and the importance of the chemical bath conditions cannot be overemphasized for a successful process. Conventional monitoring of the chemical solution for CED relies on the pH value of the solution, electrical voltage level for the reduction of metal cations, and gravity measurement by immersing sensors into a plating bath. We propose a nonintrusive optical monitoring technique using three types of optical sensors such as chromatic sensors and UV/VIS spectroscopy sensors as potential candidates as a feasible optical monitoring method. By monitoring the color of the plating solution in the bath, we revealed that optically acquired information is strongly related to the thickness of the deposited copper on the wafers, and that the chromatic information is inversely proportional to the ratio of $Cu$ (111) and {$Cu$ (111)+$Cu$ (200)}, which can used to measure the quality of the chemical solution for electrochemical copper deposition in advanced interconnection technology.

• Journal of the Korean Magnetic Resonance Society
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• v.17 no.2
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• pp.81-85
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• 2013

Various fluorine-containing materials are used in electronic devices like LCD display panels and Li-ion batteries. The structural conformation of fluorine in fluorinated materials is an important contributing factor that influences the chemical and physical properties. The conformation can be changed by heat and stress during manufacture or use. Understanding the conformational changes is critical for understanding the performance and durability of electronic devices. Solid-state NMR spectroscopy could be widely used for the analysis of various fluorine-containing materials for electronic devices. However, conventional CPMAS probes cannot be used for in-situ analysis of fluorine-containing electronic devices like LCD panels and Li-ion batteries. In this paper, we show the design, construction, and optimization of a $^{19}F-^{13}C$ double-resonance solid-state NMR probe for a 400MHz wide-bore magnet with a flat square coil for in-situ analysis of fluorine-containing electronic devices without observing fluorine background signals. This custom-built probe does not show any fluorine background signals, and can have higher efficiency for lossy samples.

• Journal of Korean Society for Atmospheric Environment
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• v.17 no.E4
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• pp.169-181
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• 2001

To test the compatibility of differential optical absorption spectroscopy (DOAS) and conventional in-situ monitoring technique we conducted a comparative analysis of the two systems using hourly measurement data sets of three criteria pollutants including No$_{2}$O$_{3}$, and SO$_{2}$ collected in months between April and June of 2001 at Sung Man city, Kyung Gi Province, Korea. The results of our comparative analysis were useful to evaluate the various aspects of DOAS performance, of particular the level of agreement with the counterpart method through computation of percent differences and correlation analysis. Interpretation of the mixing ratio data for those chemical species was however confined in terms of explaining the differences affected by the changes in environmental conditions because measurements of important meteorological parameters were limited during most of the study period. Nevertheless, the overall results of this study strongly demonstrated that the mixing ratio of major pollutants measured by the two different systems maintain strong compatibility from various respects.

• Corrosion Science and Technology
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• v.6 no.4
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• pp.198-205
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• 2007

The initial stages of electrochemical oxidative CuI film formation on Cu(111), as studied by means of Cyclic Voltammetry (CV), in-situ Scanning Tunneling Microscopy (STM) and ex-situ Synchrotron X-ray Photoemission Spectroscopy (SXPS), indicate a significant acceleration of copper oxidation in the presence of iodide anions in the electrolyte. A surface confined supersaturation with mobile CuI monomers first leads to the formation of a 2D-CuI film via nucleation and growth of a Cu/I-bilayer on-top of a pre-adsorbed iodide monolayer. Structurally, this 2D-CuI film is closely related to the (111) plane of crystalline CuI (zinc blende type). Interestingly, this film causes no significant passivation of the copper surface. In an advanced stage of copper dissolution a transition from the 2D- to a 3D-CuI growth mode can be observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.137-137
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• 2008

In-situ doped polycrystalline 3C-SiC thin films were deposited by APCVD at $1200^{\circ}C$ using HMDS(hexamethyildisilane: $Si_2(CH_3)_6)$) as Si and C precursor, and 0 ~ 100 sccm $N_2$ as the dopant source gas. The peak of SiC is appeared in polycrystalline 3C-SiC thin films grown on $SiO_2$/Si substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of polycrystalline 3C-SiC thin films decreased from 8.35 $\Omega{\cdot}cm$ with $N_2$ of 0 sccm to 0.014 $\Omega{\cdot}cm$ with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from $3.0819\times10^{17}$ to $2.2994\times10^{19}cm^{-3}$ and their electronic mobilities increased from 2.433 to 29.299 $cm^2/V{\cdot}S$, respectively.

• Journal of Electrochemical Science and Technology
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• v.7 no.4
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• pp.277-285
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• 2016

There is a growing demand for simple, cost-effective, and accurate analytical tools to determine the concentrations of biological and environmental compounds. In this study, a stable electroactive thin film of cobalt hexacyanoferrate (Cohcf) was prepared as an in situ chemical precipitant using electrostatic adsorption of $Co^{2+}$ on a silicate sol-gel matrix (SSG)-modified indium tin oxide electrode pre-adsorbed with $[Fe(CN)_6]^{3-}$ ions. The modified electrode was characterized by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and electrochemical techniques. Electrocatalytic oxidation of hydrazine on the modified electrode was studied. An electrochemical sensor for hydrazine was constructed on the SSG-Cohcf-modified electrode. The oxidation peak currents showed a linear relationship with the hydrazine concentration. This study provides insight into the in situ growth and stability behavior of Cohcf nanostructures and has implications for the design and development of advanced electrode materials for fuel cells and sensor applications.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.12 no.2
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• pp.171-178
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• 2014

After the expiration of operating license of a plant, all infrastructures within the plant must be safely dismantled to the point that it no longer requires measures for radiation protection. Despite the fact that Kori 1 and Wolsong 1 are close to the expiration of their operating license, sufficient technologies for radiological characterization, decontamination and dismantling is still under development. The purpose of this study is to develop one of methods for radiological inventory assessment on measuring object by using direct measure of large component with In-Situ measurement technique. Radiological inventory was assessed by analyzing nuclide using portable gamma spectroscopy without dismantling reactor head, and the result of direct measurement was supplemented by performing indirect measurement. Radiochemical analysis were performed on surface contamination samples as well. During the study, radiological inventory of reactor vessel calculated expanding the result. Based on the result and the radioactivity variation of each radionuclides time frame for decommissioning can be decided. Thus, it is expected that during the decommissioning of plants, the result of this study will contribute to the reduction of radiation exposure to workers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.494-503
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• 1997

We investigated the initial stages of formation of the Cu/polyimide interface using another two methods by X-ray photoelectron spectroscopy. : One, in-situ measurement with increasing of Cu deposition thickness onto polyimide(PI), the other, measurement with decreasing of Cu thickness of Cu/pI film by $Ar^+$ ion etching. From these results, we find that the chemical reactions exist in Cu/PI interface. However, the measured chemical reactions were different according to experimental method.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.