• 한국전기전자재료학회논문지
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• 제35권6호
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• pp.603-609
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• 2022

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a-Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.484-484
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• 2013

기존 진단용 Digital X-ray Detector이 직접방식에서는 a-Se (Amorphous Selenium)이 대중화되었지만 고전압을 인가하여야한다는 점과 그로 인한 물질 자체의 Life time 감소 등 여러 단점들 때문에 기타 후보물질들로 HgI2, PbI2, PbO, CdTe, CdZnTe가 연구 되고 있다. 이러한 후보 물질들 중 본 연구에서는 PVD (Physical Vapor Deposition)방식을 이용하여 Polycrystalline CdTe 박막을 제작하고 특성 향상을 위해 유전물질을 Passive layer와 Protect layer로써 증착하였다. 또한 유전체층의 위치에 따른 특성 분석을 위해 제작된 박막은 FE-SEM (Field Emission Scanning Electron Microscope), XRD (X-ray Diffraction)을 통해 구조적인 특성을 확인하였다. 그리고 입사되는 X-ray 선량에 의해 생성되는 전기적 특성을 분석하였다, 그 결과 박막의 Grain Size는 약 $5{\mu}M$이며 (111)방향의 주 peak를 띄는 Poly CdTe형태로 증착된 것을 확인하였다. 전기적인 신호 결과 Passive layer와 Protect layer를 증착한 박막 모두 Darkcurrent가 감소된 것을 확인하였다. 또한 Sensitivity 측정 결과 Passive layer를 삽입한 경우 신호 값이 감소하였으며 Protect layer를 삽입한 경우 신호 값의 변화가 일어나지 않았다. 그러므로 Protect layer를 등착한 박막의 경우 SNR이 현저히 높아지는 결과를 낳았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Transactions on Electrical and Electronic Materials
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• 제13권2호
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• pp.98-101
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• 2012

I studied the stability of organic photovoltaic cells in terms of P3HT:PCBM-71 blend ratio as a function of storage time. I obtained the best cell performance by optimizing the blend ratio of electron donor and electron acceptor within the active layer. In this study, I found that the more the P3HT:PCBM ratio increases within the active layer, the more the cell efficiency decreases as the storage time increases. As a result, the best optimized blend ratio was the 1:0.6 ratio of P3HT:PCBM-71, and cell efficiency of the device with the 1:0.6 blend ratio was 4.49%. The device with the best cell efficiency showed good stability.

• 한국음향학회:학술대회논문집
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• 한국음향학회 1999년도 학술발표대회 논문집 제18권 2호
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• pp.151-156
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• 1999

본 논문에서는 국제 표준화기구(ISO) 산하의 동영상 전문가 그룹(MPEG)의 오디오 압축방법들중 하나인 MPEG-I layer 3 의 복호화기를 고정 소수점으로 변환한 후, $OakDSPCore^{\circledR}$를 기반으로 전 과정을 어셈블리어로 실시간 구현하였다. 실시간 구현에 사용된 $OakDSPCore^{\circledR}$는 DSP Group사에서 개발된 저전력 소비형 16-비트 고정 소수점 DSPCore로서 40MIPS의 성능을 가지고 있으며, 음성/오디오, 통신, 디지털 셀룰라폰 같은 소비자의 맞게 ASIC화할 수 있는 장점을 가지고 있다. 구현된 MP3 복호화기는 약33 MIPS의 복잡도를 나타내며, 사용된 메모리양은 프로그램 ROM 3.1K words, 데이터 ROM(table) 10.82K words 및 ROM 6.1K words이다. 구현된 MP3 복호화기는 OMNI-MEDIASOUND에서 제공하는 4개의 test 벡터들을 bit-exact하게 통과하였다.

• Transactions on Electrical and Electronic Materials
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• 제18권2호
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• pp.70-73
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• 2017

We investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells. These cells were without front surface texture or back reflector. Maximum power point efficiency of these cells showed that an optimized device structure is needed to get the best device output. This depends on the thickness and defect density ($N_d$) of the active layer. A typical 10% photovoltaic device conversion efficiency was obtained with a $N_d=8.86{\times}10^{15}cm^{-3}$ defect density and 630 nm active layer thickness. Our investigation suggests a correlation between defect density and active layer thickness to device efficiency. We found that amorphous silicon solar cell efficiency can be improved to well above 10%.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2009년도 추계학술대회 논문집
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• pp.251-254
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• 2009

A new type of dye-sensitized solar cells(DSCs) based on Ti-mesh electrode without using TCO layer is fabricated for high-efficient and low-cost solar cell application. The TCO-Iess DSCs sample is composed of a [glass/ dye sensitized $TiO_2$ layer/ Ti-mesh electrode/ electrolyte/ metal counter electrode]. The Ti-mesh electrode with high conductivity can collect electrons from the $TiO_2$ layer and allows the ionic diffusion of $I^-/I_3{^-}$ through the mesh hole. Thin Ti-mesh (${\sim}40{\mu}m$ in thickness) electrode material is processed using rapid prototype method. Electrical performance of as-fabricated DSCs is presented and discussed in detail.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제12권3호
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• pp.1152-1167
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• 2018

In this paper, I propose an application layer cooperative congestion control scheme for safety message broadcast in vehicular networks, called CMS, that adaptively controls a vehicle's safety message rate and transmit timing based on the channel congestion state. Motivated by the fact that all vehicles should transmit and receive an application layer safety message in a periodic manner, I directly exploit the message itself as a means of estimating the channel congestion state. In particular, vehicles can determine wider network conditions by appending their local channel estimation result onto safety message transmissions and sharing them with each other. In result CMS realizes cooperative congestion control without any modification of the existing MAC protocol. I present extensive NS-3 simulation results which show that CMS outperforms conventional congestion control schemes in terms of the packet collision rate and throughput, especially in a high-density traffic environment.

• 한국표면공학회지
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• 제29권6호
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• pp.644-647
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• 1996

The distribution of coercivity in the thickness direction were investigated by using Kerr hysteresis loop tracer for the Co-Cr films deposited by Facing Targets Sputtering apparatus. It was found that the difference between the coercivities of surface layer and initial growth layer H$_c$$\bot$(S)-H$_c$$\bot$(I) correlated strongly with $\Delta$H$_o$, shich represents the degree of distribution of coercivity. Furthermore, the Cr content was varied in order to improve the coercivity of imitial growth layer H$_c$$\bot$(I) and distribution of coercivity. H$_c$$\bot$(I) took a maximum value of 750 Oe and the distribution of coercivity became sharper at the Cr content of 25at. %.

• 한국진공학회지
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• 제3권4호
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• pp.414-419
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• 1994

알루미늄 박편 위에 Pt/$Al_2O_3$ 모델 촉매를 만들었다. 알루미늄 표면을 $10 ^5Torr$의 산소 압력 하에서 산화시킨후 plasma evaporation source를 사용하여 Pt을 증착시켰다. 이 모델 촉매 표면에서 일 어나는 1-butene 의 반응을 연구하였다. 산화알루미늄 표면에서는 이성질화 반응이 일어 났으나 Pt을 증착시킨 산화알루미늄 표면에서는 수소첨가반응이 일어남이 관찰되었다. 알루미나 표면의 Pt이 증가함 에 따라 수소첨가반응으로서 선택성이 증가되었다.