IMPROVEMENT OF DISTRIBUTION OF COERCIVITY IN CO-CR FILMS DEPOSSSITED BY FACING TARGETS SPUTTERING

  • Takayama, Seiryu (Dept. of Physical Electronics, Tokyo Institute of Technology) ;
  • Nakagawa, Shigeki (Dept. of Physical Electronics, Tokyo Institute of Technology) ;
  • Kim, Kyung-Hwan (Dept. of Electrical Electronics, Kyung Won University) ;
  • Naoe, Masahiko (Dept. of Physical Electronics, Tokyo Institute of Technology)
  • Published : 1996.12.01

Abstract

The distribution of coercivity in the thickness direction were investigated by using Kerr hysteresis loop tracer for the Co-Cr films deposited by Facing Targets Sputtering apparatus. It was found that the difference between the coercivities of surface layer and initial growth layer H$_c$$\bot$(S)-H$_c$$\bot$(I) correlated strongly with $\Delta$H$_o$, shich represents the degree of distribution of coercivity. Furthermore, the Cr content was varied in order to improve the coercivity of imitial growth layer H$_c$$\bot$(I) and distribution of coercivity. H$_c$$\bot$(I) took a maximum value of 750 Oe and the distribution of coercivity became sharper at the Cr content of 25at. %.

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