• 제목/요약/키워드: high voltage switch

검색결과 629건 처리시간 0.026초

진공스위치 트리거 발생기 설계에 관한연구 (A study on the design of triggering pulse generator for the triggered vacuum switch)

  • 김무상;손윤규;박웅화;이병준
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.201.2-201.2
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    • 2016
  • The triggered vacuum switch (TVS) is widely used as a high power switch in the field of pulsed power application. TVS can produce current of higher than 100 kA within a microsecond after being triggered. A triggering high voltage pulse generator supplies a high voltage signal to the trigger system to initiate the discharge between a trigger pin and one of main electrode. The trigger system, which consists of a tungsten trigger electrode and cylindrical ceramic insulator around it, is normally installed at the center of main cathode electrode. The discharging characteristics of the trigger system strongly depend on the geometry, electrode material, vacuum pressure and so on. In addition, we especially will focus on the developing a triggering pulse generator, which can vary not only value of voltage but also pulse duration, because its properties gives pivot influences on the TVS discharge. To verify such effects, we made a 3.3 kJ TVS set-up initially. Thus we will discuss some of prominent results from 3.3 kJ TVS system. In parallel we will show on the design of 300 kJ TVS system for the high current in the future.

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영전류 스위칭 방식의 보조스위치를 갖는 새로운 영전압 스위칭 방식의 PWM 컨버터 (A New Zero-Voltage-Switching PWM Converters with Zero-Current-Switched Auxiliary Switch)

  • 마근수;홍일희;김양모
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제52권12호
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    • pp.632-640
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    • 2003
  • In conventional Zero-Voltage-Transition(ZVT) PWM converters, zero-voltage turn-on and turn-off for main switch without increasing voltage/current stresses is achieved at a fixed frequency. The switching loss, stress, and noise, however, can't be minimized because they adopt auxiliary switches turned off under hard-switching condition. In this paper, new ZVS-PWM converters of which both active and passive switches are always operating with soft-switching condition are proposed. Therefore, the proposed ZVS-PWM converters are most suitable for avionics applications requiring high-power density. Breadboarded ZVS-PWM boost converters using power MOSFET are constructed to verify theoretical analysis.

Design Aspects of a New Reliable Torsional Switch with Excellent RF Response

  • Gogna, Rahul;Jha, Mayuri;Gaba, Gurjot Singh;Singh, Paramdeep
    • Transactions on Electrical and Electronic Materials
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    • 제17권1호
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    • pp.7-12
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    • 2016
  • This paper proposes a metal contact RF MEMS switch which utilizes a see-saw mechanism to acquire a switching action. The switch was built on a quartz substrate and involves vertical deflection of the beam under an applied actuation voltage of 5.46 volts over a signal line. The see-saw mechanism relieves much of the operation voltage required to actuate the switch. The switch has a stiff beam eliminating any stray mechanical forces. The switch has an excellent isolation of −90.9 dB (compared to − 58 dB in conventional designs ), the insertion of −0.2 dB, and a wide bandwidth of 88 GHz (compared to 40 GHz in conventional design ) making the switch suitable for wide band applications.

Analysis, Design, Modeling, Simulation and Development of Single-Switch AC-DC Converters for Power Factor and Efficiency Improvement

  • Singh, Bhim;Chaturvedi, Ganesh Dutt
    • Journal of Power Electronics
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    • 제8권1호
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    • pp.51-59
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    • 2008
  • This paper addresses several issues concerning the analysis, design, modeling, simulation and development of single-phase, single-switch, power factor corrected AC-DC high frequency switching converter topologies with transformer isolation. A detailed analysis and design is presented for single-switch topologies, namely forward buck, flyback, Cuk, Sepic and Zeta buck-boost converters, with high frequency isolation for discontinuous conduction modes (DCM) of operation. With an awareness of modem design trends towards improved performance, these switching converters are designed for low power rating and low output voltage, typically 20.25W with 13.5V in DCM operation. Laboratory prototypes of the proposed single-switch converters in DCM operation are developed and test results are presented to validate the proposed design and developed model of the system.

단락시험에서 후비보호차단기와 투입스위치의 중요 역할 (The study of a primary role of Back up Breaker and Making Switch for Short Circuit Test)

  • 김선구;김선호;김원만;노창일;이동준;정흥수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.915-916
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    • 2007
  • There are many equipments for the Short Circuit Test, for example Short Circuit Generator, Induction Motor, Sequence Timer, Exciter, CLR, Back Up Breaker, Making Switch and TRV etc. Especially Back up Breaker and Making Switch are very important equipments to test the short circuit test. A role of a Back up Breaker is to break high-voltage and high-current for short circuit test and a Making Switch should be operated always same speed/time and kept electrical-mechanical characteristics to make the voltage and current of short circuit test. This study introduces to the short circuit test also to kinds, principal movements and compare them of Back up Breaker and Making Switch.

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A New Type of High Bandwidth RF MEMS Switch - Toggle Switch

  • Bernd Schauwecker;Karl M. Strohm;Winfried Simon;Jan Mehner;Luy, Johann-Friedrich
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권4호
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    • pp.237-245
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    • 2002
  • A new type of RF MEMS switch for low voltage actuation, high broadband application and high power capability is presented. Mechanical and electromagnetic simulations of this new RF MEMS switch type are shown and the fabrication process and measurement results are given. The switching element consists of a cantilever which is fixed by a suspension spring to the ground of the coplanar line. The closing voltage is 16V. The switches exhibit low insertion loss (<0.85dB@30GHz) with good isolation (>22dB@30GHz).

Identification of Open-Switch and Short-Switch Failure of Multilevel Inverters through DWT and ANN Approach using LabVIEW

  • Parimalasundar, E.;Vanitha, N. Suthanthira
    • Journal of Electrical Engineering and Technology
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    • 제10권6호
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    • pp.2277-2287
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    • 2015
  • In recent times, multilevel inverters are given high priority in many large industrial drive applications. However, the reliability of multilevel inverters are mainly affected by the failure of power electronic switches. In this paper, open-switch and short-switch failure of multilevel inverters and its identification using a high performance diagnostic system is discussed. Experimental and simulation studies were carried out on five level cascaded H-Bridge multilevel inverter and its output voltage waveforms were analyzed at different switch fault cases and at different modulation index values. Salient frequency domain features of the output voltage signal were extracted using the discrete wavelet transform multi resolution signal decomposition technique. Real time application of the proposed fault diagnostic system was implemented through the LabVIEW software. Artificial neural network was trained offline using the Matlab software and the resultant network parameters were transferred to LabVIEW real time system. In the proposed system, it is possible to precisely identify the individual faulty switch (may be due to open-switch (or) short-switch failure) of multilevel inverters.

Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Using a Corrugated Bridge with HRS MEMS Package

  • Song Yo-Tak;Lee Hai-Young;Esashi Masayoshi
    • Journal of electromagnetic engineering and science
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    • 제6권2호
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    • pp.135-145
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    • 2006
  • This paper presents the theory, design, fabrication and characterization of the novel low actuation voltage capacitive shunt RF-MEMS switch using a corrugated membrane with HRS MEMS packaging. Analytical analyses and experimental results have been carried out to derive algebraic expressions for the mechanical actuation mechanics of corrugated membrane for a low residual stress. It is shown that the residual stress of both types of corrugated and flat membranes can be modeled with the help of a mechanics theory. The residual stress in corrugated membranes is calculated using a geometrical model and is confirmed by finite element method(FEM) analysis and experimental results. The corrugated electrostatic actuated bridge is suspended over a concave structure of CPW, with sputtered nickel(Ni) as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon(HRS) substrate. The corrugated switch on concave structure requires lower actuation voltage than the flat switch on planar structure in various thickness bridges. The residual stress is very low by corrugating both ends of the bridge on concave structure. The residual stress of the bridge material and structure is critical to lower the actuation voltage. The Self-alignment HRS MEMS package of the RF-MEMS switch with a $15{\Omega}{\cdot}cm$ lightly-doped Si chip carrier also shows no parasitic leakage resonances and is verified as an effective packaging solution for the low cost and high performance coplanar MMICs.

Analysis of Pull-in-Voltage and Figure-of-Merit of Capacitive MEMS Switch

  • Saha, Rajesh;Maity, Santanu;Devi, Ngasepam Monica;Bhunia, Chandan Tilak
    • Transactions on Electrical and Electronic Materials
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    • 제17권3호
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    • pp.129-133
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    • 2016
  • Theoretical and graphical analysis of pull-in-voltage and figure of merit for a fixed-fixed capacitive Micro Electromechanical Systems (MEMS) switch is presented in this paper. MEMS switch consists of a thin electrode called bridge suspended over a central line and both ends of the bridge are fixed at the ground planes of a coplanar waveguide (CPW) structure. A thin layer of dielectric material is deposited between the bridge and centre conductor to avoid stiction and provide low impedance path between the electrodes. When an actuation voltage is applied between the electrodes, the metal bridge acquires pull in effect as it crosses one third of distance between them. In this study, we describe behavior of pull-in voltage and figure of merit (or capacitance ratio) of capacitive MEMS switch for five different dielectric materials. The effects of dielectric thicknesses are also considered to calculate the values of pull-in-voltage and capacitance ratio. This work shows that a reduced pull-in-voltage with increase in capacitance ratio can be achieved by using dielectric material of high dielectric constant above the central line of CPW.

대칭적인 스위치 구조 기반 RF 플라즈마 시스템 적용 전기적 가변 커패시터 (Electrical Variable Capacitor based on Symmetrical Switch Structure for RF Plasma System)

  • 민주화;채범석;김현배;서용석
    • 전력전자학회논문지
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    • 제24권3호
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    • pp.161-168
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    • 2019
  • This study introduces a new topology to decrease the voltage stress experienced by a 13.56 MHz electrical variable capacitor (EVC) circuit with an asymmetrical switch structure applied to the impedance matching circuit of a radio frequency (RF) plasma system. The method adopts a symmetrical switch structure instead of an asymmetrical one in each of the capacitor's leg in the EVC circuit. The proposed topology successfully reduces voltage stress in the EVC circuit due to the symmetrical charging and discharging mode. This topology can also be applied to the impedance matching circuit of a high-power and high-frequency RF etching system. The target features of the proposed circuit topology are investigated via simulation and experiment. Voltage stress on the switch of the EVC circuit is successfully reduced by more than 40%.