• 한국재료학회지
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• 제18권3호
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• pp.123-127
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• 2008

The production of tin oxide ($SnO_2$) microrods on iridium (Ir)-coated substrates was achieved through the thermal evaporation of Sn powders in which a sufficiently high $O_2$ partial pressure was employed. Scanning electron microscopy revealed that the product consisted of microrods with diameters that ranged from 0.9 to $40\;{\mu}m$. X-ray diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction indicated that the microrods were $SnO_2$ with a rutile structure. As the microrod tips were free of metal particles, it was determined that the growth of $SnO_2$ microrods via the present route was dominated by a vapor-solid mechanism. The thickening of rod-like structures was related to the utilization of sufficiently high $O_2$ partial pressure during the synthesis process, whereas low $O_2$ partial pressure facilitated the production of thin rods.

• Bulletin of the Korean Chemical Society
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• 제33권8호
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• pp.2609-2612
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• 2012

A simple green method was developed for rapid synthesis of silver and gold nanoparticles (AgNPs and AuNPs) has been reported using Lonicera japonica flower extract as a reducing and a capping agent. AgNPs and AuNPs were carried out at $70^{\circ}C$. The successful formation of AgNPs and AuNPs have been confirmed by UV-Vis spectro photometer, fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), energy dispersive X-ray Analysis (EDAX), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). To our knowledge, this is the first report where Lonicera japonica flower was found to be a suitable plant source for the green synthesis of AgNPs and AuNPs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.306.2-306.2
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• 2016

Niobium oxide thin films were synthesized by reactive rf magnetron sputtering. The target was metallic niobium with 2 inch in diameter and the substrate was n-type Si wafer. To control the surface properties of the films, Nb oxide thin films were obtained at various mixing ratios of argon and oxygen gases. Nb oxide thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The result of alpha step showed that the thickness of Nb oxide thin films were decreased with increasing the oxygen gas ratios. SEM images showed that the granular morphology was formed at 0% of oxygen gas ratio and then disappeared at 20 and 75% of oxygen gas ratio. The amorphous Nb oxide was observed by XRD at all films. The oxidation state of Nb and O were studied with high resolution Ni 2p and O 1s XPS spectra. And the change in the chemical environment of Nb oxide thin films was investigated by XPS with Ar+ sputtering.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.286-286
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• 2006

We report on a fascinating morphology; giant spherical conducting polythiophene by the in-situ gamma radiation-induced chemical polymerization method. The resultant micron-size buckyball-shaped polymer structures were identified by high resolution transmission electron microscopy and scanning electron microscopy. Different characterizations e.g. Fourier transform infrared, x-ray diffraction, and x-ray photoelectron microscopy were utilized to prove that the new morphological conducting polythiophene was synthesized successfully by this novel method.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.270-270
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• 2010

4족 반도체 원소 양자점들은 원소가 가지고 있는 반도체적 성질과, 양자점에서 나타나는 quantum confinements 적인 특성 때문에 전자재료나 광학적 분야, 특히 태양전지 분야에서 그 쓰임이 대두되고 있다. 이러한 4족 반도체 원소의 양자점들을 만들기 위한 여러 방법들이 시도되고 있는데, 그 중에서 특히 절연체 박막에 4족 반도체 원소의 양자점들을 만드는 방법에는 이온주입, PVD, 그리고 CVD 를 통한 multi-layer 증착후 열처리 과정을 반드시 포함하는 Stranski- krastanov 방법이 주로 사용되고 있다. 본 실험에서는 고체원소 이온주입이라는 방법을 통해 절연체 박막의 증착과 이온주입이 한 진공용기 내에서 연속공정으로 이루어 지면서, 별도의 열처리 과정 없이 결정화된 게르마늄 양자점을 만들어 보았다. 이는 (X-ray diffraction) XRD와 Raman spectroscopy로 결정화된 게르마늄을 확인할 수 있었으며, (X-ray photoelectron spectroscopy)XPS 데이터로도 순수한 게르마늄이 표면에서 깊이 방향으로 약 $1,000\;{\AA}$ 만큼 게르마늄 양자점들이 만들어 짐을 알 수 있었다. 마지막으로 (High resolution transmittance electron microscopy) HRTEM으로 그 양자점의 크기와 분포도 그리고 결정성을 알아 보았다.

• Carbon letters
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• 제24권
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• pp.73-81
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• 2017

Interconnected meso/microporous activated carbons were prepared from pumpkin seeds using a simple chemical activation method. The porous carbon materials were prepared at different temperatures (PS-600, PS-700, PS-800, and PS-900) and demonstrated huge surface areas ($645-2029m^2g^{-1}$) with excellent pore volumes ($0.27-1.30cm^3g^{-1}$). The well-condensed graphitic structure of the prepared activated carbon materials was confirmed by Raman and X-ray diffraction analyses. The presence of heteroatoms (O and N) in the carbon materials was confirmed by X-ray photoemission spectroscopy. High resolution transmission electron microscopic images and selected area diffraction patters further revealed the porous structure and amorphous nature of the prepared electrode materials. The resultant porous carbons (PS-600, PS-700, PS-800, and PS-900) were utilized as electrode material for supercapacitors. To our delight, the PS-900 demonstrated a maximum specific capacitance (Cs) of $303F\;g^{-1}$ in 1.0 M $H_2SO_4 $ at a scan rate of 5 mV. The electrochemical impedance spectra confirmed the poor electrical resistance of the electrode materials. Moreover, the stability of the PS-900 was found to be excellent (no significant change in the Cs even after 6000 cycles).

• 한국결정학회지
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• 제14권2호
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• pp.79-83
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• 2003

Electrolytic MnO₂ (EMD)의 미세구조를 X선 회절 및 투과전자현미경 분석을 통해 연구하였다. 벌크에 대한 X선 회절 실험은 전헝적인 EMD 재료의 분말 회절패턴을 나타내었다. 투과전자현미경 분석은 EMD가 약 0.2㎛크기의 입자로 이루어져 있고, 각각의 입자가다시 10 nm 정도의 결정립으로 이루어진 이중 미세구조를 가짐을 나타내었다. 나노 결정립에 대한 전자빔 마이크로 회절 분석 결과, EMD 입자는 여러 상의 혼합체로서 약 50%의 Ramsdellite, 30%의 ε-MnO₂, 15%의 Pyrolusite 상으로 이루어져 있음을 확인하였다. 한편, X선 분말 회절패턴 상의 약 67°에 위치한 ｛1120｝ 피크와 (0001) 면에 대한 고분해능 이미지는 ε-MnO₂ 상의 존재를 입증하였다.

• Progress in Superconductivity
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• 제13권3호
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• pp.178-183
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• 2012

Two $RuSr_2(EuCe)Cu_2O_z$ samples (as prepared and after $N_2$ treatment) have been investigated by thermogravimetric (TC) analysis, high-resolution x-ray powder diffraction and magnetization measurements. TG measurements which were carried out in $H_2/Ar$ atmosphere showed that the $N_2$ treatment of the as-prepared sample at $650^{\circ}C$ for 2h leads to a decrease in the oxygen content z by about 0.25. This oxygen depletion was accompanied by an increase in the magnetic transition temperature from 54.0 K to 114.9 K. This magnetic behavior is discussed in connection with the results of Rietveld analysis of the x-ray diffraction data which showed that the $N_2$ treatment resulted in both a significant increase in the rotation angle of the $RuO_6$ octahedra and a decrease in c-lattice parameter of the sample.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.364.1-364.1
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• 2016

We report the characteristics of individual ultra-long SnO2 nanowires(NWs) grown on sapphire(0001) substrates by vapor transport method. NWs, with typical lengths of >$400{\mu}m$, grew in the form of NW bundles under a hydrogen reducing atmosphere, without metal catalysts. The individual NWs were examined using high-resolution X-ray diffraction, transmission electron microscopy, and micro-Raman spectroscopy. The results revealed that the SnO2 NWs grew as high-quality, tetragonal-rutile-phase single crystals with mosaic distributions of $0.02^{\circ}$ and $0.026^{\circ}$ in the (101) and (110) planes, respectively.