• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.190-194
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• 2005

There is a great demand of micro-actuators for mobile information devices such as SFF optical drives and mobile camera phones. However, conventional magnetic coils of electromagnetic motors are a major obstacle for miniaturization because of their complicated structures and large power consumption. In this paper, a linear ultrasonic motor to actuate focusing lens of mobile devices is proposed. The new actuator uses a ring type bimorph piezoelectric material, and $d_{31}$ mode is adopted for applying linear motion. The interaction between inertia force and friction force makes linear motion by high-frequency saw signal input. The saw signal gives steady forces on the one direction by asymmetric inclination property of the signal itself on time domain. A commercial FEM (ANSYS) was used in this investigation for simulating structural analysis, identification of dynamic property, such as resultant displacement and coupled analysis with piezoelectric material. To evaluate the performance of the new design, a prototype was manufactured and experiments were carried out. Experimental results show the actuator motion of 1.52 mm/s at 10 kHz input signal in 5 V.

• Transactions of the Society of Information Storage Systems
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• v.2 no.4
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• pp.251-256
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• 2006

There is a great demand of micro-actuators for mobile information devices such as SFF optical drives and mobile phone cameras. However, the magnetic coils used in conventional electromagnetic motors are a major obstacle for the miniaturization because of their complicated structures and large power consumption. In this paper, a linear ultrasonic motor to actuate focusing lens of mobile devices is proposed. The new actuator uses a ring type bimorph piezoelectric material, and $d_{31}$ mode is adopted for applying linear motion. The interaction between inertia force and friction force makes linear motion by high-frequency saw signal input. The saw signal gives steady forces on the one direction by asymmetric inclination property of the signal itself on time domain. A commercial FEM(ANSYS) was used in this investigation for simulating structural analysis, identification of dynamic property, such as resultant displacement and coupled analysis with piezoelectric material. To evaluate the performance of the new design, a prototype was manufactured and experiments were carried out. Experimental results show the actuator motion of 5.4 mm/s at 10V saw signal of 41 kHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.832-836
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• 2009

A piezoelectric ultrasonic scaler, usually used to remove the tartar out of teeth and to amputate the pubis, is a recently popular instrument for dental treatment due to its several merits such as small size, low-electric power, precision and low-cost. It has typically two parts of a tip and vibration system, which is also composed of head, piezoelectric elements and tail-mass. The scaler concentrates its displacement on tip and has commonly a resonance frequency at 25~30 kHz, and in order to improve the performance of the scaler, it is important to standardize the size of the vibration system without tip for high performance because scaler in quality differs according to several tips. In this study, a Finite Element Analysis (FEA) was utilized to optimize the structure of ultrasonic scaler in the vibration system. Consequently, this study revealed that influence of several tips on property were minimized and scaler showed good property at the resonance frequency of 28 kHz.

• Food Engineering Progress
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• v.15 no.2
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• pp.169-174
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• 2011

This study was performed to analyze the effects of ultra fine pulverization (UFP) on the physicochemical properties of sweet potato starch (SPS). The average diameter and specific surface area of the SPS was decreased from 22.94 to 10.25 $\mu$m and from 0.879 to 1.909 $m^2$ /g throughout UFP, respectively, and the damaged starch content was increased from 13.7 to 99.2%. The pulverized sweet potato starch (PSPS) had higher swelling power, solubility, and transmittance values than the SPS. X-ray diffractograms revealed that the SPS had a C-type pattern, which disappeared in PSPS. The rapid visco analysis (RVA) characteristics, peak viscosity, break down, and set back of SPS ceased to exist in PSPS. According to differential scanning calorimetry (DSC) curves, the peak temperature ($T_p$) and gelatinization enthalpy ($\Delta$E) of SPS were $71.95^{\circ}C$ and 10.40 J/g, respectively, while these remained undetected in PSPS. The enzymatic digestibilities of SPS and PSPS were 61.7 and 84.7%, respectively.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.44-47
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• 2019

Amorphous carbon layer (ACL) is actively used as an etch mask. Recent advances in patterning ACL requires the next level of durability of hard mask in high aspect ratio etch in near future semiconductor manufacturing, and it is worthwhile to know the surface property of ACL thin film to enhance the property of etch hard mask. In this research, ACL are deposited by 6 inch plasma enhanced chemical vapor deposition system with $C_3H_6$ and $N_2$ gas mixture. Surface properties of deposited ACL are investigated depending on gas flow, pressure, RF power. Fourier transform infrared is used for the analysis of surface chemistry, and X-ray photoemission spectra is used for the structural analysis with the consideration of the contents of $sp^2$ and $sp^3$ through fitting of C1s. Also mechanical properties of deposited ACL are measured in order to evaluate hardness.

• Laser Solutions
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• v.10 no.3
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• pp.25-32
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• 2007

The effect of welding speed on the weldability, microstructures, hardness, tensile property of Nd:YAG laser welding joint in 600MPa grade precipitation hardening high strength steel was investigated. A shielding gas was not used, and bead-on-plate welding was performed using various welding speeds at a power of 3.5kW. Porosity in the joints occurred at 1.8m/min, but were not observed over the welding speed of 2.1m/min. However, spatter occurred over the welding speed of 6.6m/min. The hardness was the highest at heat affected zone(HAZ) near fusion zone(FZ), and was decreased on approaching to the base metal. The maximum hardness increased with increasing welding speed. The microstructure of FZ was composed of coarse grain boundary ferrite and bainite(upper) but the HAZ near the FZ contained bainite(Lower) and fine ferrite at a low welding speed. With increasing welding speed, ferrite at the FZ and the HAZ became finely and upper binite changed to lower bainite. In a perpendicular tensile test to the weld line, all specimens were fractured at the base metal, and the tensile strength and the yield strength of joints was equal to those of raw material. Elongation was found to be lower than that of the raw material.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.104-104
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• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.101-105
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• 2001

For high voltage XLPE power cables, semiconducting layers have been applied to prevent discharge at the interface between conductor and insulation, and/or insulation and external shielding layer. The semiconducting layers may be also effective to release electrical stress in the interface. The property of semiconducting layers are significantly related to the quality and reliability of power cables. Generally, these semiconducting layers are formed by extruding, the conductibility of the material is given by the carbon black mixed with base polymer. The life of power cables is depended on the smoothness of the interface between insulation and semiconducting layer. If the smoothness is no good, the life of power cables is shorter because the electrical stress and water tree is increased. The causes of no good smoothness are the void of the interface, the protrusions, the contaminants and impurities of the semiconducting layer. The selection and dispersion of the Carbon Black is the significant factor to determine the life of power cable in the manufacturing of semiconducting compound.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.9
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• pp.49-54
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• 2008

In this paper, the power added efficiency(PAE) of class F power amplifier is improved by applying a new Photonic Bandgap (PBG) structure on the output of amplifier. The proposed spiral PBG structure is a two-dimensional (2-D) periodic lattice patterned on a dielectric slab that does not require nonplanar fabrication process. This structure bas higher suppression performance at second harmonic. Also, It has a sharp skirt property. This new PBG structure can be applied with class F power amplifier for efficiency improvement. We obtained the PAE of 73.62 % for CDMA applications, and the PAE performance is improved as much as 6.2 % compared with that of a conventional class F power amplifier.