• Proceedings of the Korea Concrete Institute Conference
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• 1995.10a
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• pp.25-29
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• 1995

To perform high-strength of concrete, fine powers of pozzolan such as fly ash, silica fume mixed with cement. But mobility of cement and concrete decreased due to using of these powers. To control decrease of this mobility, it is required that mobility is improved by using of chemical admixture such as superplasticizer. We used admixtures -NSF, NM-2, NT-2 etc- in order to improve mobility of cement paste being substituted by 10, 20% of pozzolans respectively. It proved that optimum dosage of NSF, NT-2 was 2.0% for being substituted 10%, 3.0% for 20% so as to increase mobility of cement paste mixed paste mixed with fine powers of pozzolan at W/C=0.40.

• Bulletin of the Korean Chemical Society
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• v.35 no.8
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• pp.2505-2511
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• 2014

Indium oxide nanocrystals ($In_2O_3$ NCs) with sizes of 5.5 nm-10 nm were synthesized by hot injection of the mixture precursors, indium acetate and oleic acid, into alcohol solution (1-octadecanol and 1-octadecence mixture). Field emission transmission electron microscopy (FE-TEM), High resolution X-Ray diffraction (X-ray), Nuclear magnetic resonance (NMR), and Fourier transform infrared spectroscopy (FT-IR) were employed to investigate the size, surface molecular structure, and crystallinity of the synthesized $In_2O_3$ NCs. When covered by oleic acid as a capping group, the $In_2O_3$ NCs had a high crystallinity with a cubic structure, demonstrating a narrow size distribution. A high mobility of $2.51cm^2/V{\cdot}s$ and an on/off current ratio of about $1.0{\times}10^3$ were observed with an $In_2O_3$ NCs thin film transistor (TFT) device, where the channel layer of $In_2O_3$ NCs thin films were formed by a solution process of spin coating, cured at a relatively low temperature, $350^{\circ}C$. A size-dependent, non-monotonic trend on electron mobility was distinctly observed: the electron mobility increased from $0.43cm^2/V{\cdot}s$ for NCs with a 5.5 nm diameter to $2.51cm^2/V{\cdot}s$ for NCs with a diameter of 7.1 nm, and then decreased for NCs larger than 7.1 nm. This phenomenon is clearly explained by the combination of a smaller number of hops, a decrease in charging energy, and a decrease in electronic coupling with the increasing NC size, where the crossover diameter is estimated to be 7.1 nm. The decrease in electronic coupling proved to be the decisive factor giving rise to the decrease in the mobility associated with increasing size in the larger NCs above the crossover diameter.

• Journal of Internet of Things and Convergence
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• v.10 no.2
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• pp.125-130
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• 2024

With the rapid growth of mobility technology, the industrial sector is demanding storage devices that can reliably process data from various equipment and sensors in vehicles. NAND flash memory is being utilized as a storage device in mobility environments because it has the advantages of low power and fast data processing speed as well as strong external shock resistance. However, flash memory is characterized by data corruption due to long-term exposure to high temperatures. Therefore, a dedicated system for temperature management is required in mobility environments where high temperature exposure due to weather or external heat sources such as solar radiation is frequent. This paper designs a dedicated temperature management system for managing storage device temperature in a mobility environment. The designed temperature management system is a hybrid of traditional air cooling and water cooling technologies. The cooling method is designed to operate adaptively according to the temperature of the storage device, and it is designed not to operate when the temperature step is low to improve energy efficiency. Finally, experiments were conducted to analyze the temperature difference between each cooling method and different heat dissipation materials, proving that the temperature management policy is effective in maintaining performance.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.1
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• pp.61-77
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• 2017

The most challenging issues in the multi-channel MAC of the IEEE 1609.4 standard is how to handle the dynamic vehicular traffic condition with a high mobility, dynamic topology, and a trajectory change. Therefore, dynamic channel coordination schemes between CCH and SCH are required to provide the proper bandwidth for CCH/SCH intervals and to improve the quality of service (QoS). In this paper, we use a Markov model to optimize the interval based on the dynamic vehicular traffic condition with high mobility nodes in the multi-channel MAC of the IEEE 1609.4 standard. We evaluate the performance of the three-dimensional Markov chain based on the Poisson distribution for the node distribution and velocity. We also evaluate the additive white Gaussian noise (AWGN) effect for the multi-channel MAC coordination scheme of the IEEE 1609.4 standard. The result of simulation proves that the performance of the dynamic channel coordination scheme is affected by the high node mobility and the AWGN. In this research, we evaluate the model analytically for the average delay on CCHs and SCHs and also the saturated throughput on SCHs.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.441-445
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• 2021

The components affecting the extrinsic transconductance (g_{m_ext}) in In_0.7Ga_0.3As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate were investigated. First, comprehensive modeling, which only requires physical parameters, was used to explain both the intrinsic transconductance (g_{m_int}) and the g_{m_ext} of the devices. Two types of In_0.7Ga_0.3As QW HEMT were fabricated with gate lengths ranging from 10 ㎛ to sub-100 nm. These measured results were correlated with the modeling to describe the device behavior using analytical expressions. To study the effects of the components affecting g_{m_int}, the proposed approach was extended to projection by changing the values of physical parameters, such as series resistances (R_S and R_D), apparent mobility (𝜇_{n_app}), and saturation velocity (𝜈_sat).

• Asia Marketing Journal
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• v.23 no.1
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• pp.29-62
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• 2021

The current research develops and tests the theory that beliefs in economic mobility are affected by social capital at the community level, especially for low-income individuals. Integrating concepts from social capital and perceived economic mobility (PEM), this research hypothesizes that members of disadvantaged groups (vs. members of advantaged groups) are more likely to adjust their PEM depending on the social capital at the community level. Using archival data, multilevel analysis is employed to examine whether individual- or community-level social capital increases PEM and the extent to which income moderates this relationship. Consistent with our hypotheses, social capital at the community level is significantly associated with PEM and this relationship is stronger for low-income (vs. high-income) earners. Study 1 shows that individuals in communities with high levels of social relations and participation are more likely to have higher PEM than those in communities with lower levels. Study 2 replicates this finding with a similar dependent variable: negative prospects. Further, the PEM-enhancing and negative prospects-decreasing effects of community-level social capital are consistently stronger for low-income (vs. high-income) earners. This study extends the investigation of PEM and social capital by suggesting social capital as a possible antecedent of PEM.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.238.2-238.2
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• 2011

Organic thin film transistors (OTFTs) have been attracting considerable attention because of their potential use in low-cost, large area, electronic devices such as flexible displays, biochemical sensors, and smart cards. In past several years, gold/pentacene has been frequently used in OTFTs because of the high mobility of pentacene and the high work function of gold. To improve the performance of the OTFTs contact area doping of pentacene with p-doping materials are well known. In this work we demonstrated selectively contact area doping of pentacene with Iodine vapor. For effective doping elevated pentacene layer under the source-drain area was deposited and exposed to Iodine vapor. We got better electrical performance for elevated pentacene structure rather than planer structure with relatively high field-effect mobility.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.8
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• pp.3068-3078
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• 2015

Although the massive MIMO system supports a high throughput, it requires a lot of channel information for channel compensation. For the reduction of overhead, the massive MIMO system generally uses TDD as duplexing scheme. Therefore, the massive MIMO system is sensitive to rapidly changing fast fading in according to time. For the improvement of reduced SINR by fast fading, the adaptive power control is proposed. Unlike the conventional scheme, the proposed scheme considers mobility of device for adaptive power control. The simulation of the proposed scheme is performed with consideration for mobility of device. The result of the simulation shows that the proposed scheme improves SINR. Since SINR is decreased in according to the number of device in the network by unit of cell, each base station can accommodate more devices by the proposed scheme. Also, because the massive MIMO system with high SINR can use high order modulation scheme, it can support higher throughput.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.148-151
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• 2011

We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.

• Korean Journal of Materials Research
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• v.7 no.5
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• pp.390-396
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• 1997

AIGaAs/InGaAs/GaAs high electron mobility transisters(HEMT)소자의 오믹 접합재료로 일반적으로 사용되고 있는 AuGeNi의 접합저항과 열적 안정성을 향상시키기 위한 새로운 접합재료에 대해 연구하였다. 이를 위해 sub/M$_{1}$Au-Ge/M$_{2}$Au의 구조에서 M$_{1}$을 Ni과 Pd, M$_{2}$를 Ni, Ti, Mo로 하였을 경우의 접합 재료에 대한 오믹 접합 특성의 변화를 조사하였다. 또한 일반 열처리로와 램프 히터를 이용한 고속 열처리에 따른 오믹 특성을 조사하였다. M$_{1}$을 Ni에서 Pd으로 대체하였을 경우 접합 저항은 약간 증가하였으며 접합 특성의 개선을 관찰되지 않았다. M$_{2}$를 Ni에서 Ti이나 Mo로 대치하였을 경우, 접합 저항은 감소하였고 열적 안정성과 접합 형상은 현저히 개선되었다. 특히 Ni/Au-Ge/Mo/Au의 접합재료는 급속 열처리에 의해 -0.1Ωmm의 극히 낮은 잡합 저항과 우수한 접합 형상을 갖는 것으로 조사되었다.